Hiroki Yamashita
Hiroki Yamashita, Kanagawa-Ken JP
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20100186096 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, COMPUTER PROGRAM AND COMPUTER-READABLE RECORDING MEDIUM - An image processing apparatus includes an alteration unit and a control unit. The alteration unit alters a first image file stored in a removable storage medium in order to generate a second image file. The control unit controls to store the second image file in the storage medium without deleting the first image file from the storage medium, if the first image file includes authentication data that is used to authenticate whether the first image file has been altered. | 07-22-2010 |
20130059426 | METHOD FOR MANUFACTURING MOLECULAR MEMORY DEVICE - According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members. | 03-07-2013 |
20150017760 | METHOD FOR MANUFACTURING MOLECULAR MEMORY DEVICE - According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members. | 01-15-2015 |
Hiroki Yamashita, Osaka JP
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20140103504 | SEMICONDUCTOR DEVICE - A first chip including electrodes is mounted above an expanded semiconductor chip formed by providing an expanded portion at an outer edge of a second chip including chips. The electrodes of the first chip are electrically connected to the electrodes of the second chip by conductive members. A re-distribution structure is formed from a top of the first chip outside a region for disposing the conductive members along a top of the expanded portion. Connection terminals are provided above the expanded portion, and electrically connected to ones of the electrodes of the first chip via the re-distribution structure. | 04-17-2014 |
Hiroki Yamashita, Tokyo JP
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20130342275 | TRANSIMPEDANCE AMPLIFIER - Provided is a transimpedance amplifier which can realize a high-speed and high-quality receiver operation in an optical communication module or a router device having the optical communication module. An offset voltage which is generated in a post amplifier for differentiating and amplifying a single-phase output signal from a pre-amplifier in accordance with single-phase differentiation and conversion is cancelled by detecting a threshold voltage from an output of the pre-amplifier or an output of the post amplifier by a threshold detection circuit and by shifting a level of the threshold voltage corresponding to an offset amount to be compensated. | 12-26-2013 |
20150222236 | OPTICAL TRANSMISSION CIRCUIT - The high-speed and high-quality reception operation of a transimpedance amplifier of an optical communication module and a router including the same can be achieved. A preamplifier performs current/voltage conversion with respect to intersymbol interference due to bandwidth shortage of a laser diode. A threshold control circuit which generates positive and negative threshold voltages with respect to a center potential of an output signal, latch circuits, and a selector circuit are provided to the output of the preamplifier. An NRZ signal is received as a duobinary signal based on the sign determination result of the previous bit. The determination error rate of the latch circuits can thus be improved. | 08-06-2015 |
Hiroki Yamashita, Mie-Ken JP
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20150060984 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to embodiment, a nonvolatile semiconductor memory device, includes: a memory cell region; and a peripheral region, the memory cell region including: a semiconductor layer including semiconductor regions; control gate electrodes; a first insulating film; a semiconductor-containing layer having a smaller thickness than the first insulating film; and a second insulating film, the peripheral region including: the semiconductor layer; a third insulating film; the semiconductor-containing layer, and a periphery of the semiconductor-containing layer being surrounded by an element isolation region; the first insulating film provided on the semiconductor-containing layer; and a pair of conductive layers extending from a surface of the first insulating film to reach the third insulating film via the semiconductor-containing layer, and the pair of conductive layers being in contact with part of a lower surface of the semiconductor-containing layer. | 03-05-2015 |
20150069495 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes: a first stacked body having a gate insulating film, a first charge storage layer, a first insulating film, a second charge storage layer, and a second insulating film, a second element isolation region, a bottom and at least part of a side portion of the second element isolation region being in contact with the semiconductor substrate in the peripheral portion; and a second stacked body, a third insulating film, a first layer, a fourth insulating film, a second layer, and the second insulating film are stacked in this order from the semiconductor substrate side between the semiconductor substrate and the control gate electrode in the second stacked body in the peripheral portion, a side portion of the second stacked body being covered with the second insulating film. | 03-12-2015 |
Hiroki Yamashita, Kanagawa JP
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20150255500 | OPTICAL APPARATUS AND METHOD FOR MANUFACTURING SAME - A downsized, highly reliable optical apparatus is stably and easily manufactured with high productivity. The optical apparatus includes: an optical device having a principal surface including an optical unit; a transparent member disposed facing the optical unit; a semiconductor device disposed above a back surface of the optical device and electrically connected to the optical device, the back surface being opposite the principal surface; and a resin member provided in a region adjacent to the optical device and the semiconductor device above a surface of the transparent member, the surface of the transparent member facing the optical device. | 09-10-2015 |
Hiroki Yamashita, Yokkaichi JP
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20160079252 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor memory device includes a semiconductor pillar extending in a first direction, a first insulating film, a second insulating film, a third insulating film, a first portion of a first electrode provided to be in contact with an outer surface of the first insulating film, a second portion of the first electrode provided to be in contact with an outer surface of the first insulating film, a third portion of the first electrode provided to be in contact with the first insulating film, a forth insulating film provided on an outer surface of the first electrode, and a second electrode provided on an outer surface of the forth insulating film. An outer diameter of the first portion is larger than an outer diameter of the third portion. | 03-17-2016 |