Patent application number | Description | Published |
20090272315 | SILICA GLASS CRUCIBLE - A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer. | 11-05-2009 |
20090293806 | SILICA GLASS CRUCIBLE AND METHOD FOR MANUFACTURING THE SAME - A silica glass crucible for pulling up a silicon crystal related to the present invention includes a roundness Sx of an interior surface of the silica glass crucible and a roundness Sy of an exterior surface of the silica glass crucible in at least a wall part of the silica glass crucible both being 0.4 or less (Sx/M≦0.4, Sy/M≦0.4) to a maximum thickness M in the same measurement height as the roundness. | 12-03-2009 |
20100170298 | Vitreous silica crucible manufacturing apparatus - A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R | 07-08-2010 |
20100251959 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL - Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer( | 10-07-2010 |
20120125257 | VITREOUS SILICA CRUCIBLE - Provided is a vitreous silica crucible having a reference point, which is capable of accurately detecting the location of a defect in the vitreous silica crucible used for pulling silicon single crystal, determining a defect generating site of silicon single crystal, and investigating the cause of the defect. The reference point used for specifying the position relationship with respect to a particular part is formed in at least one site of an end portion, an inner wall and an outer wall of the crucible. | 05-24-2012 |
Patent application number | Description | Published |
20090084308 | Easily crystallizable vitreous silica member, vitreous silica crucible and method for manufacturing single-crystal silicon - A vitreous silica member of the present invention is characterized by being formed of vitreous silica exhibiting the easily crystallizable property in the absence of a crystallization accelerator. The vitreous silica having the easily crystallizable property is obtained preferably by heating and melting crystalline quartz at a temperature in the range of 1,710° C. or more to 1,780° C. or less for vitrification, and controlling the fictive temperature of the glass to be in the range of 1,100° C. or more to 1,400° C. or less. The invention also includes a vitreous silica crucible and a method of pulling single-crystal silicon using this vitreous silica crucible. | 04-02-2009 |
20100006022 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL USING THE SAME - A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm | 01-14-2010 |
20100244311 | METHOD AND APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - A method of manufacturing a vitreous silica crucible by a rotary mold method, which includes performing arc melting in a state in which electrodes are provided so as to be shifted from a mold central line, wherein, by this eccentric arc, the glass temperature difference during melting of a straight body portion, a curved portion and a bottom of the crucible is controlled to 300° C. or below and the thickness of a transparent layer of the straight body portion and the bottom is controlled to 70 to 120% of the thickness of a transparent layer of the curved portion. | 09-30-2010 |
Patent application number | Description | Published |
20110267167 | COIL-TYPE ELECTRONIC COMPONENT AND ITS MANUFACTURING METHOD - A coil-type electronic component has a coil inside or on the surface of its base material and is characterized in that: the base material is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; this oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via this oxide layer. | 11-03-2011 |
20120038449 | COIL-TYPE ELECTRONIC COMPONENT AND ITS MANUFACTURING METHOD - A coil-type electronic component has a coil inside or on an outer surface of its base material and is characterized in that: the base material is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; the oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via the oxide layer. | 02-16-2012 |
20120119871 | COIL-TYPE ELECTRONIC COMPONENT AND ITS MANUFACTURING METHOD - A coil-type electronic component has a coil inside or on the surface of its base material and is characterized in that: the base material is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; this oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via this oxide layer. | 05-17-2012 |
20130200970 | COIL-TYPE ELECTRONIC COMPONENT AND PROCESS FOR PRODUCING SAME - A coil-type electronic component has a coil inside or on the surface of its base material wherein the base material in the coil-type electronic component is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; this oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via this oxide layer. The coil-type electronic component can be produced at low cost and combines high magnetic permeability with high saturation magnetic flux density. | 08-08-2013 |