Patent application number | Description | Published |
20100320916 | Plasma Generator and Discharge Device and Reactor Using Plasma Generator - A plasma generator has a first member | 12-23-2010 |
20130032382 | HERMETIC FEEDTHROUGH - A feedthrough includes a sheet having a hole, where the sheet includes a first material that is a ceramic comprising alumina. The feedthrough further includes a second material substantially filling the hole. The second material is different than the first material and includes platinum and an additive that includes alumina. The first and second materials have a co-fired bond therebetween that hermetically seals the hole. | 02-07-2013 |
20130032391 | FEEDTHROUGH CONFIGURED FOR INTERCONNECT - A hermetic feedthrough for an implantable medical device includes an insulator, a conduit integrated with the insulator, and a pad coupled to an exterior surface of the insulator. The insulator includes a first material and the conduit includes a second material that is electrically conductive. The pad is configured to receive a lead coupled thereto. Further, the pad is electrically conductive and coupled to the conduit. The pad includes a first layer and a second layer overlaying at least a portion of the first layer. | 02-07-2013 |
20130032392 | INSULATOR FOR A FEEDTHROUGH - A hermetic feedthrough for an implantable medical device includes an insulator, a conduit configured to conduct electricity through the insulator, and a ferrule coupled to the insulator. The insulator is formed from a ceramic material and the conduit and insulator have a co-fired bond therebetween, which hermetically seals the conduit with the insulator. The insulator is elongate and has opposing ends that include flat surfaces and the ferrule includes a frame for receiving the insulator. | 02-07-2013 |
20140151114 | INSULATOR FOR A FEEDTHROUGH - A hermetic feedthrough for an implantable medical device includes an insulator body and a ferrule. The insulator body includes ceramic material and one or more electrically conductive conduits extending through the insulator body. The insulator is disposed in an opening of the ferrule. The insulator body includes a plurality of substantially flat surfaces that each include a plurality of edges. A rounded corner extends between adjacent edges of any two adjacent substantially flat surfaces. Each corner between any two adjacent substantially flat surfaces that face toward the ferrule has an average radius that is less than approximately 25% of a length of the corresponding edges. | 06-05-2014 |
20140305694 | INSULATOR FOR A FEEDTHROUGH - A hermetic feedthrough for an implantable medical device includes an insulator, a conduit configured to conduct electricity through the insulator, and a ferrule coupled to the insulator. The insulator is formed from a ceramic material and the conduit and insulator have a co-fired bond therebetween, which hermetically seals the conduit with the insulator. The insulator is elongate and has opposing ends that include flat surfaces and the ferrule includes a frame for receiving the insulator. | 10-16-2014 |
Patent application number | Description | Published |
20080230697 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted. | 09-25-2008 |
20090039258 | Scanning Electron Microscope And Method For Detecting An Image Using The Same - A scanning electron microscope includes an electron beam source which emits an electron beam, a beam current controller which controls a beam current of the electron beam, an electron beam converger which converges the electron beam on a surface of a sample, an electron beam scanner which scans the electron beam on the surface of the sample, a table which mounts the sample and moves at least in one direction, a detector which detects a secondary electron or a reflected electron emanated from the sample by the scan of the electron beam, an image former which forms an image of the sample based on a detection value of the detector, an image processor which processes the image formed by the image former. The beam current controller controls the beam current of the electron beam by changing transmittance of the electron beam in an irradiation path of the electron beam. | 02-12-2009 |
20090166557 | Charge control apparatus and measurement apparatus equipped with the charge control apparatus - The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time. | 07-02-2009 |
20090261252 | Method and apparatus for pattern inspection - Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph. | 10-22-2009 |
20090309022 | APPARATUS FOR INSPECTING A SUBSTRATE, A METHOD OF INSPECTING A SUBSTRATE, A SCANNING ELECTRON MICROSCOPE, AND A METHOD OF PRODUCING AN IMAGE USING A SCANNING ELECTRON MICROSCOPE - An object of the present invention provides an inspection apparatus and an inspection method which use an electron beam image to accurately detect a defect that is difficult to detect in an optical image, the apparatus and method also enabling prevention of a possible decrease in focus accuracy of an inspection image which affect the defect detection. To accomplish the object, the present invention includes a height measurement section which measures height of the electron beam irradiation position on the substrate after the substrate is loaded onto a movable stage, a height correction processing section which corrects the measured height, and a control section which adjusts a focus of the electron beam according to the height corrected by the height correction processing section, wherein a stage position set when the height measurement section measures the height differs from a stage position set when the substrate is irradiated with the electron beam, and the height correction processing section corrects a possible deviation in height resulting from movement from the stage position for the height measurement to the stage position for the electron beam irradiation. | 12-17-2009 |
20100133433 | ELECTRON BEAM APPARATUS - A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled. | 06-03-2010 |
20110139985 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted. | 06-16-2011 |
20110204228 | CHARGED PARTICLE BEAM APPARATUS - It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source ( | 08-25-2011 |
Patent application number | Description | Published |
20090141569 | SEMICONDUCTOR MEMORY DEVICE - Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented. | 06-04-2009 |
20110273952 | SEMICONDUCTOR MEMORY DEVICE THAT CAN STABLY PERFORM WRITING AND READING WITHOUT INCREASING CURRENT CONSUMPTION EVEN WITH A LOW POWER SUPPLY VOLTAGE - Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented. | 11-10-2011 |
20120243302 | SEMICONDUCTOR MEMORY DEVICE THAT CAN STABLY PERFORM WRITING AND READING WITHOUT INCREASING CURRENT CONSUMPTION EVEN WITH A LOW POWER SUPPLY VOLTAGE - Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented. | 09-27-2012 |
20140001360 | Charged Particle Ray Apparatus and Pattern Measurement Method | 01-02-2014 |
20140126278 | SEMICONDUCTOR MEMORY DEVICE THAT CAN STABLY PERFORM WRITING AND READING WITHOUT INCREASING CURRENT CONSUMPTION EVEN WITH A LOW POWER SUPPLY VOLTAGE - Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented. | 05-08-2014 |
Patent application number | Description | Published |
20130032378 | HERMETIC FEEDTHROUGH - A hermetic feedthrough for an implantable medical device includes a sheet having a hole, where the sheet includes a ceramic comprising alumina. The feedthrough also includes a second material substantially filling the hole, where the second material includes a platinum powder mixture and an alumina additive. The platinum powder mixture includes a first platinum powder having a median particle size of between approximately 3 and 10 micrometers and a second platinum powder that is coarser than the first platinum powder and has a median particle size of between approximately 5 and 20 micrometers. The platinum powder mixture includes between approximately 50 and 80 percent by weight of the first platinum powder and between approximately 20 and 50 percent by weight of the second platinum powder. The first and second materials have a co-fired bond therebetween that hermetically seals the hole. | 02-07-2013 |
20130119264 | Ion Wind Generator and Ion Wind Generating Device - Provided is an ion wind generator capable of diversifying either or both of the amount of wind or wind direction. An ion wind generator is provided with a first electrode, a second electrode having a downstream area which is arranged at a position in a plan view shifted from first electrode towards the positive side in the x direction, and a dielectric between the first electrode and the second electrode. In a plane view, the distance (d) in the x-direction from a downstream side edge of the first electrode to the downstream side edge of the downstream area differs in the y-direction which is perpendicular to the x-direction. | 05-16-2013 |
20140117834 | PLASMA GENERATOR AND PLASMA GENERATING DEVICE - The plasma generator has the dielectric having the inner circumferential surface, and a pair of electrodes which are arranged separated from each other in the direction along the inner circumferential surface and are isolated from each other by the dielectric and which are capable of generating plasma on the inner circumferential surface by application of voltage. In the inner circumferential surface, at the positions between the pair of electrodes in a plan view, recessed portions causing electric field concentration are formed. | 05-01-2014 |
20140217882 | PLASMA GENERATOR AND PLASMA GENERATING DEVICE - A plasma generator has a dielectric with a through hole and has a first electrode and a second electrode provided in the dielectric. The first electrode surrounds the through hole when viewed in the penetrating direction of the through hole. The second electrode includes a downstream region which is positioned further toward one side of the through hole in the penetrating direction of the through hole than the first electrode. When viewed in the penetrating direction of the through hole, the downstream region surrounds the through hole and is further away toward the outer circumferential side from the inner circumferential surface of the through hole than the first electrode. | 08-07-2014 |