Huang-Wen
Huang-Wen Chen, Hsinchu City TW
Patent application number | Description | Published |
---|---|---|
20160047045 | PROCESS CONTROL METHOD AND PROCESS CONTROL SYSTEM - A process control method is provided for performing a deposition process on a plurality of wafers of a batch. The process control method includes: deciding a placement location of the wafers of the batch according to the history information of a tool and the product information of the batch; calculating a target value of each placement location according to the placement location of the wafers of the batch and the history information of the tool; calculating a process parameter according to the history information of the tool, the product information of the batch, and the target value of each placement location; and performing a deposition process according to the placement location of the wafers of the batch and the process parameter. | 02-18-2016 |
Huang-Wen Lai, New Taipei City TW
Patent application number | Description | Published |
---|---|---|
20140092295 | AUTOFOCUS SYSTEM AND AUTOFOCUS METHOD - An embodiment of an autofocus system is provided, including a height detection module, an image detection module, a movement unit and a processing unit. The height detection module is arranged to output a plurality of detection lights along a Z axis direction, wherein each of the detection lights has different focal lengths and different wavelengths such that the height detection module generates a dispersion region along the Z axis direction. The image detection module is arranged to capture an image of the focus position. The movement unit is arranged to move an object along the Z axis direction, wherein the object has an internal surface and an external surface. The processing unit determines whether the external surface and the internal surface are within the dispersion region according to the quantity of the energy peaks of a reflectance spectrum received by the height detection module. | 04-03-2014 |
Huang-Wen Su, Taipei TW
Huang-Wen Tseng, Zhubei City TW
Patent application number | Description | Published |
---|---|---|
20130020623 | STRUCTURE AND METHOD FOR SINGLE GATE NON-VOLATILE MEMORY DEVICE - The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate having a periphery region and a memory region; a field effect transistor disposed in the periphery region and having silicide features; and a single floating gate non-volatile memory device disposed in the memory region, free of silicide and having a first gate electrode and a second gate electrode laterally spaced from each other. | 01-24-2013 |
20160005751 | STRUCTURE AND METHOD FOR SINGLE GATE NON-VOLATILE MEMORY DEVICE - The present disclosure provides an integrated circuit. The integrated circuit includes a substrate; a field effect transistor disposed in a periphery region of the substrate, the field effect transistor including a gate electrode, a first source, a first drain; a floating gate non-volatile memory device disposed in a memory region of the substrate, the floating gate non-volatile memory device including a second source, a third source, and a second drain, wherein the second source, the third source, and the second drain are disposed along an axis; and a floating gate electrode in the memory region including a first portion, a second portion, and a third portion, wherein the first portion, the second portion, and the third portion are electrically connected, wherein the first portion, the second portion and the third portion extend perpendicular to the axis. | 01-07-2016 |