Patent application number | Description | Published |
20100264458 | METHOD FOR MANUFACTURING HETEROSTRUCTURES - A method for manufacturing heterostructures for applications in the fields of electronics, optics or opto-electronics. This method includes providing a silicon oxide layer with a thickness of less than or equal to 25 nanometers on one of a donor substrate or a receiver substrate or on both substrates, heat treating the substrate(s) that contains the silicon oxide layer at 900° C. to 1,200° C. under a neutral or reducing atmosphere that contains at least one of argon or hydrogen to form layer trapping through-holes inside the silicon oxide, bonding the substrates together at a bonding interface with the silicon oxide layer(s) positioned between them, reinforcing the bonding by annealing the substrates at 25° C. to 500° C. such that the trapping holes retaining gas species at the bonding interface, and transferring an active layer as a portion of the donor substrate onto the receiver substrate to obtain the heterostructure. | 10-21-2010 |
20110127581 | HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS - The present invention relates to a support for the epitaxy of a layer of a material of composition Al | 06-02-2011 |
20110207295 | METHOD OF DETACHING SEMI-CONDUCTOR LAYERS AT LOW TEMPERATURE - A method for producing a structure having an ultra thin buried oxide (UTBOX) layer by assembling a donor substrate with a receiver substrate wherein at least one of the substrates includes an insulating layer having a thickness of less than 50 nm that faces the other substrate, conducting a first heat treatment for reinforcing the assembly between the two substrates at temperature below 400° C., and conducting a second heat treatment at temperature above 900° C., wherein the exposure time between 400° C. and 900° C. between the heat treatments is less than 1 minute and advantageously less than 30 seconds. | 08-25-2011 |
20110308721 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a vacuum chamber to provide bonding of wafers under pressure below atmospheric pressure; and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. | 12-22-2011 |
20120013012 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS - Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods. | 01-19-2012 |
20120013013 | TEMPORARY SEMICONDUCTOR STRUCTURE BONDING METHODS AND RELATED BONDED SEMICONDUCTOR STRUCTURES - Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods. | 01-19-2012 |
20120015497 | Preparing a Surface of a Sapphire Substrate for Fabricating Heterostructures - A method of fabricating a heterostructure comprising at least a first substrate ( | 01-19-2012 |
20120067524 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a pumping device; a vacuum chamber connected to the pumping device; and an optical system configured to determine the position of alignment marks on the surfaces of the semiconductor wafers to be bonded in the bonding module. The apparatus also includes a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. | 03-22-2012 |
20120241821 | HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS - A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10 | 09-27-2012 |
20120252162 | METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES FORMED USING SUCH METHODS - Methods of bonding together semiconductor structures include annealing a first metal feature on a first semiconductor structure, bonding the first metal feature to a second metal feature of a second semiconductor structure to form a bonded metal structure that comprises the first metal feature and the second metal feature, and annealing the bonded metal structure. Annealing the first metal feature may comprise subjecting the first metal feature to a pre-bonding thermal budget, and annealing the bonded metal structure may comprise subjecting the bonded metal structure to a post-bonding thermal budget that is less than the pre-bonding thermal budget. Bonded semiconductor structures are fabricated using such methods. | 10-04-2012 |
20120252189 | METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES AND INTERMEDIATE STRUCTURES FORMED USING SUCH METHODS - Methods of bonding together semiconductor structures include annealing metal of a feature on a semiconductor structure prior to directly bonding the feature to a metal feature of another semiconductor structure to form a bonded metal structure, and annealing the bonded metal structure after the bonding process. The thermal budget of the first annealing process may be at least as high as a thermal budget of a later annealing process. Additional methods involve forming a void in a metal feature, and annealing the metal feature to expand the metal of the feature into the void. Bonded semiconductor structures and intermediate structures are formed using such methods. | 10-04-2012 |
20130026608 | PROCESS FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING A FUNCTIONALIZED LAYER ON A SUPPORT SUBSTRATE - The invention relates to a process for manufacturing a semiconductor structure comprising a functionalized layer on a support substrate, comprising the following steps: (a) implanting ionic species in a source substrate comprising the said functionalized layer and a sacrificial buffer layer located under the functionalized layer relative to the direction of implantation, to a depth delimiting the thickness of an upper part of the source substrate comprising the functionalized layer and at least part of the buffer layer; (b) bonding the source substrate to the support substrate; (c) fracturing the source substrate and transferring the upper part of the source substrate to the support substrate; (d) removing the buffer layer by selective etching with respect to the functionalized layer. | 01-31-2013 |
20130026663 | METHOD FOR CURING DEFECTS IN A SEMICONDUCTOR LAYER - A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor layer. The method includes applying a selective electromagnetic irradiation to the semiconductor layer to heat that layer to a temperature lower than its temperature of fusion to cure defects without causing an increase in the temperature of the receiver substrate beyond 500° C. | 01-31-2013 |
20130032272 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a vacuum chamber to provide bonding of wafers under pressure below atmospheric pressure; and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. The bonding and loadlock modules remain at a pressure below atmospheric pressure while the wafer is transferred from the loadlock module into the bonding module. | 02-07-2013 |
20130075868 | METHODS OF TRANSFERRING LAYERS OF MATERIAL IN 3D INTEGRATION PROCESSES AND RELATED STRUCTURES AND DEVICES - Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the implanted ions may be formed to vary laterally across the generally planar weakened zone. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods. | 03-28-2013 |
20130175672 | LOW TEMPERATURE LAYER TRANSFER PROCESS USING DONOR STRUCTURE WITH MATERIAL IN RECESSES IN TRANSFER LAYER, SEMICONDUCTOR STRUCTURES FABRICATED USING SUCH METHODS - Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming recesses in the donor structure, implanting ions into the donor structure to form a generally planar, inhomogeneous weakened zone therein, and providing material within the recesses. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods. | 07-11-2013 |
20130217206 | METHODS OF PROVIDING THIN LAYERS OF CRYSTALLINE SEMICONDUCTOR MATERIAL, AND RELATED STRUCTURES AND DEVICES - Methods of fabricating semiconductor devices include forming a metal silicide in a portion of a crystalline silicon layer, and etching the metal silicide using an etchant selective to the metal silicide relative to the crystalline silicon to provide a thin crystalline silicon layer. Silicon-on-insulator (SOI) substrates may be formed by providing a layer of crystalline silicon over a base substrate with a dielectric material between the layer of crystalline silicone and the base substrate, and thinning the layer of crystalline silicon by forming a metal silicide layer in a portion of the crystalline silicon, and then etching the metal silicide layer using an etchant selective to the metal silicide layer relative to the crystalline silicon. | 08-22-2013 |
20130256907 | BONDED PROCESSED SEMICONDUCTOR STRUCTURES AND CARRIERS - Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods. | 10-03-2013 |
20130299997 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES - Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods. | 11-14-2013 |
20140357093 | PROCESS FOR STABILIZING A BONDING INTERFACE, LOCATED WITHIN A STRUCTURE WHICH COMPRISES AN OXIDE LAYER AND STRUCTURE OBTAINED - The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface. | 12-04-2014 |