Patent application number | Description | Published |
20080239114 | METHOD AND APPARATUS TO DETECT A DEAD PIXEL OF AN IMAGE SENSOR AND METHOD AND APPARATUS TO CAPTURE AN IMAGE FROM AN IMAGE SENSOR - A method and apparatus to detect a dead pixel in an image sensor having a pixel array to generate a plurality of image frames, and a method and apparatus to capture an image from the image sensor detect a dead pixel in the image sensor. A change of a scene of the image frames is sensed, and a detection operation to detect a dead pixel in the pixel array is performed if the change of the scene is sensed. | 10-02-2008 |
20100165827 | Victim System Detector, Method of Detecting a Victim System, Wireless Communication Device and Wireless Communication Method - A victim system detector for detecting whether a second wireless communication system uses frequency bands that are used by a first wireless communication system (detecting whether the second wireless communication system is a victim system) includes a correlator and a decision unit. The correlator calculates a correlation value between a frequency domain baseband signal associated with the first wireless communication system and a correlation sequence of the second wireless communication system. The decision unit determines, based on the correlation value, whether the second wireless communication system is a victim system. Therefore, the victim system is detected accurately and efficiently. | 07-01-2010 |
20110188615 | APPARATUS AND METHOD FOR DETECTING SIGNAL IN A SPATIAL MULTIPLEXING MULTIPLE INPUT MULTIPLE OUTPUT COMMUNICATION SYSTEM - A Spatial Multiplexing Multiple Input Multiple Output (SM-MIMO) communication system, which generates a Q matrix and an R matrix through QR decomposing a channel matrix in an array order corresponding to an order of transmission antennas of a signal transmission device, determines a detection order of transmission symbols included in a transmission symbol vector, QR decomposes a reception signal vector and generates the QR decomposed reception signal vector as a transformed reception signal vector, substitutes all of transmittable candidate symbols for a transmission symbol corresponding to a first detection order among the transmission symbols and sequentially removes interference in the transformed reception signal vector, detects candidate symbols of transmission symbols corresponding to a remaining detection order from the interference-removed transformed reception signal vector, combines the detected candidate symbols, detects candidate symbol vectors, and calculates Log-Likelihood Ratio values of bits included in the transmission symbols by using the detected vectors. | 08-04-2011 |
20110256676 | Methods of Manufacturing a Semiconductor Device - Methods of manufacturing a semiconductor device include forming integrated structures of polysilicon patterns and hard mask patterns on a substrate divided into at least an NMOS forming region and a PMOS forming region. A first preliminary insulating interlayer is formed on the integrated structures. A first polishing of the first preliminary insulating interlayer is performed until at least one upper surface of the hard mask patterns is exposed, to form a second preliminary insulating interlayer. The second preliminary insulating interlayer is etched until the upper surfaces of the hard mask patterns are exposed, to form a third preliminary insulating interlayer. A second polishing of the hard mask patterns and the third preliminary insulating interlayer is performed until the polysilicon patterns are exposed to form an insulating interlayer. The polysilicon patterns are removed to form an opening. A metal material is deposed to form a gate electrode pattern in the opening. | 10-20-2011 |
20120122283 | METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method includes forming a plurality of dummy gate structures on a substrate, each dummy gate structure including a dummy gate electrode and a dummy gate mask, forming a first insulation layer on the substrate and the dummy gate structures to fill a first space between the dummy gate structures, planarizing upper portions of the first insulation layer and the dummy gate structures, removing the remaining first insulation layer to expose a portion of the substrate, forming an etch stop layer on the remaining dummy gate structures and the exposed portion of the substrate, forming a second insulation layer on the etch stop layer to fill a second space between the dummy gate structures, planarizing upper portions of the second insulation layer and the etch stop layer to expose the dummy gate electrodes, removing the exposed dummy gate electrodes to form trenches, and forming metal gate electrodes in the trenches. | 05-17-2012 |
20120315732 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND DEVICE USING SAME - In a method for fabricating a semiconductor device, a substrate may be provided that includes: a base, an active fin that projects from an upper surface of the base and is integrally formed with the base, and a buffer oxide film pattern formed on the active fin in contact with the active fin. A first dummy gate film may be formed on the substrate to cover the buffer oxide film pattern and the first dummy gate film may be smoothed to expose the buffer oxide film pattern. A second dummy gate film may be formed on the exposed buffer oxide film pattern and the first dummy gate film. | 12-13-2012 |
20130089121 | METHOD OF DEMODULATING MDCM SIGNAL USING HARD DECISION AND METHOD OF DEMODULATING MDCM SIGNAL USING SOFT DECISION - A method of demodulating a modified dual carrier modulation (MDCM) signal using hard decision includes generating real symbol vector candidates and imaginary symbol vector candidates which correspond to an MDCM signal pair; calculating a first norm between a real part of the MDCM signal pair and each of the real symbol vector candidates and determining as a real symbol vector a real symbol vector candidate that has the minimum first norm among the real symbol vector candidates; and calculating a second norm between an imaginary part of the MDCM signal pair and each of the imaginary symbol vector candidates and determining as an imaginary symbol vector an imaginary symbol vector candidate that has the minimum second norm among the imaginary symbol vector candidates. | 04-11-2013 |
20130101013 | METHOD AND APPARATUS TO DETECT A SYMBOL IN RECEIVER INCLUDING MULTIPLE RECEIVING ANTENNAS - A receiver of a wireless communication system and method thereof include antennas configured to receive data, wherein the data comprises a preamble, a header, and a payload. The receiver also includes a synchronizer configured to perform time synchronization of the data received through corresponding paths of each antenna using corresponding preambles of the data. The receiver includes a header detector configured to detect a header from the data of each of the paths. A surviving path selector in the receiver is configured to select a signal of a surviving path from among the paths based on the header or the preamble. The receiver also includes combiner configured to combine the signal existing in the surviving path to demodulate the payload. | 04-25-2013 |
20130163345 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A method of operating a semiconductor memory device includes an operation of applying a first voltage to selected bit lines, a second voltage to unselected bit lines and a common source line, and turning on drain and source selection transistors, an operation of applying a program voltage to a selected word line and a switch voltage to a switch word line, and applying a first pass voltage to first unselected word lines disposed between the switch word line and a common source line and between the selected word line and a bit line, and elevating the switch voltage to generate hot electrons and inject the hot electrons to a selected memory cell of the selected word line to program the selected cell. | 06-27-2013 |
20140044222 | METHOD AND DEVICE FOR DETECTING RECEIVED SIGNAL USING MEDIAN ABSOLUTE DEVIATION - A method of detecting a received signal, includes determining correlation between a received signal in a predetermined signal interval and training symbols, and determining a median absolute deviation (MAD) of the received signal in a predetermined reference interval. The method further includes detecting a presence of the received signal based on the correlation and the MAD. | 02-13-2014 |
20140270010 | METHOD AND APPARATUS FOR SOFT-DECISION DETECTION IN 2X2 MIMO SYSTEM - A method for detecting soft-decisions in a 2×2 MIMO system includes detecting all candidate symbol vector sets S in which there exist all values of a real part and an imaginary part, and calculating a log-likelihood ratio (LLR) with respect to the candidate symbol vector sets S from | 09-18-2014 |
20150023441 | OPERATING METHOD OF WIRELESS LOCAL AREA NETWORK STATION - A method of operating a wireless local area network (WLAN) station. The WLAN station receives at least one desired signal and at least one interference signal from an access point (AP) capable of simultaneously transmitting desired signals to multiple WLAN stations. The method includes estimating a channel and generating a channel matrix estimated based on the estimated channel, separating a channel matrix of the desired signal and a channel matrix of the interference signal from the estimated channel matrix, generating the matrix of a virtual channel by combining the separated channel matrixes, and executing a sphere decoding (SD) algorithm using the matrix of the virtual channel. | 01-22-2015 |
20150056795 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor devices includes providing a semiconductor substrate that includes a channel region. The method includes forming a gate electrode material film including a stepped portion on the channel region. A sacrificial material film that has an etch selectivity that is the same as an etch selectivity of the gate electrode material film is formed. The sacrificial material film is planarized until a top surface of the gate electrode material film is exposed. The stepped portion is reduced by removing an exposed portion of the gate electrode material film. | 02-26-2015 |