Patent application number | Description | Published |
20130221405 | APPARATUS AND METHOD FOR ELECTRONIC CIRCUIT PROTECTION - Apparatus and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises a well having an emitter and a collector region. The well has a doping of a first type, and the emitter and collector regions have a doping of a second type. The emitter region, well, and collector region are configured to operate as an emitter, base, and collector for a first transistor, respectively. The collector region is spaced away from the emitter region to define a spacing. A first spacer and a second spacer are positioned adjacent the well between the emitter and the collector. A conductive plate is positioned adjacent the well and between the first spacer and the second spacer, and a doping adjacent the first spacer, the second spacer, and the plate consists essentially of the first type. | 08-29-2013 |
20130270605 | APPARATUS AND METHOD FOR TRANSIENT ELECTRICAL OVERSTRESS PROTECTION - An apparatus and method for high voltage transient electrical overstress protection are disclosed. In one embodiment, the apparatus includes an internal circuit electrically connected between a first node and a second node; and a protection circuit electrically connected between the first node and the second node. The protection circuit is configured to protect the internal circuit from transient electrical overstress events while maintaining a relatively high holding voltage upon activation. The holes- or electrons-enhanced conduction protection circuit includes a bi-directional bipolar device having an emitter/collector, a base, and a collector/emitter; a first bipolar transistor having an emitter electrically coupled to the first node, a base electrically coupled to the emitter/collector of the bipolar device, and a collector electrically coupled to the base of the bipolar transistor; and a second bipolar transistor having an emitter electrically coupled to the second node, a base electrically coupled to the collector/emitter of the bipolar device, and a collector electrically coupled to the base of the bipolar transistor. | 10-17-2013 |
20140043715 | APPARATUS AND METHODS FOR AMPLIFIER FAULT PROTECTION - An amplifier includes a fault protection control circuit biased from the signal pin and a fault protection circuit including a first PMOS transistor and a second PMOS transistor. The sources and bodies of the first and second PMOS transistors can be connected to one another, the drain of the first PMOS transistor can be connected to the amplifier's output, and the drain of the second PMOS transistor can be connected to a signal pin. During normal operating conditions, the fault protection control circuit can turn on the first and second PMOS transistors. However, the fault protection control circuit can turn off the first PMOS transistor and turn on the second PMOS transistor when an overvoltage condition is detected, and can turn on the first PMOS transistor and turn off the second PMOS transistor when an undervoltage condition is detected, even when the integrated circuit is unpowered. | 02-13-2014 |
20140084331 | HETEROJUNCTION COMPOUND SEMICONDUCTOR PROTECTION CLAMPS AND METHODS OF FORMING THE SAME - A protection clamp is provided between a first terminal and a second terminal, and includes a multi-gate high electron mobility transistor (HEMT), a current limiting circuit, and a forward trigger control circuit. The multi-gate HEMT includes a drain/source, a source/drain, a first depletion-mode (D-mode) gate, a second D-mode gate, and an enhancement-mode (E-mode) gate disposed between the first and second D-mode gates. The drain/source and the first D-mode gate are connected to the first terminal and the source/drain and the second D-mode gate are connected to the second terminal. The forward trigger control and the current limiting circuits are coupled between the E-mode gate and the first and second terminals, respectively. The forward trigger control circuit provides an activation voltage to the E-mode gate when a voltage of the first terminal exceeds a voltage of the second terminal by a forward trigger voltage. | 03-27-2014 |
20140084347 | BIDIRECTIONAL HETEROJUNCTION COMPOUND SEMICONDUCTOR PROTECTION DEVICES AND METHODS OF FORMING THE SAME - A protection circuit including a multi-gate high electron mobility transistor (HEMT), a forward conduction control block, and a reverse conduction control block is provided between a first terminal and a second terminal. The multi-gate HEMT includes an explicit drain/source, a first depletion-mode (D-mode) gate, a first enhancement-mode (E-mode) gate, a second E-mode gate, a second D-mode gate, and an explicit source/drain. The drain/source and the first D-mode gate are connected to the first terminal and the source/drain and the second D-mode gate are connected to the second terminal. The forward conduction control block turns on the second E-mode gate when a voltage difference between the first and second terminals is greater than a forward conduction trigger voltage, and the reverse conduction control block turns on the first E-mode gate when the voltage difference is more negative than a reverse conduction trigger voltage. | 03-27-2014 |
20140110825 | Compound Semiconductor Lateral PNP Bipolar Transistors - Compound semiconductor lateral PNP bipolar transistors are fabricated based on processes traditionally used for formation of compound semiconductor NPN heterojunction bipolar transistors and hence such PNP bipolar transistors can be fabricated inexpensively using existing fabrication technologies. In particular, GaAs-based lateral PNP bipolar transistors are fabricated using GaAs-based NPN heterojunction bipolar transistor fabrication processes. | 04-24-2014 |
20140133055 | ACTIVE DETECTION AND PROTECTION OF SENSITIVE CIRCUITS AGAINST TRANSIENT ELECTRICAL STRESS EVENTS - Apparatus and methods for active detection, timing, and protection related to transient electrical events are disclosed. A detection circuit can generate a first activation signal in response to a transient electrical stress event across a first node and a second node. A blocking circuit is configured to bias the base of a first driver bipolar transistor to slow down discharge of accumulated base charge of a first driver bipolar transistor, which permits the first driver bipolar transistor to remain activated for a longer period of time than had the base of the first driver bipolar transistor been biased to the same voltage as the emitter of the first bipolar transistor. Shut-off circuitry can be included in some embodiments to prevent a discharge circuit from activating during normal operating conditions. | 05-15-2014 |
20140138735 | JUNCTION-ISOLATED BLOCKING VOLTAGE DEVICES WITH INTEGRATED PROTECTION STRUCTURES AND METHODS OF FORMING THE SAME - Junction-isolated blocking voltage devices and methods of forming the same are provided. In certain implementations, a blocking voltage device includes an anode terminal electrically connected to a first p-well, a cathode terminal electrically connected to a first n-well, a ground terminal electrically connected to a second p-well, and an n-type isolation layer for isolating the first p-well from a p-type substrate. The first p-well and the first n-well operate as a blocking diode. The blocking voltage device further includes a PNPN silicon controlled rectifier (SCR) associated with a P+ region formed in the first n-well, the first n-well, the first p-well, and an N+ region formed in the first p-well. Additionally, the blocking voltage device further includes an NPNPN bidirectional SCR associated with an N+ region formed in the first p-well, the first p-well, the n-type isolation layer, the second p-well, and an N+ region formed in the second p-well. | 05-22-2014 |
20140167104 | INTERFACE PROTECTION DEVICE WITH INTEGRATED SUPPLY CLAMP AND METHOD OF FORMING THE SAME - Protection circuit architectures with integrated supply clamps and methods of forming the same are provided herein. In certain implementation, an integrated circuit interface protection device includes a first diode protection structure and a first thyristor protection structure electrically connected in parallel between a signal pin a power high supply. Additionally, the protection device includes a second diode protection structure and a second thyristor protection structure electrically connected in parallel between the signal pin and a power low supply. Furthermore, the protection device includes a third diode protection structure and a third thyristor protection structure electrically connected in parallel between the power high supply and the power low supply. The third thyristor protection structure and the third diode protection structure are synthesized as part of the integrated circuit interface and can share at least a portion of the wells and/or diffusion regions associated with the first and second thyristor protection structures. | 06-19-2014 |
20140167105 | DEVICES FOR MONOLITHIC DATA CONVERSION INTERFACE PROTECTION AND METHODS OF FORMING THE SAME - Apparatus and methods for monolithic data conversion interface protection are provided herein. In certain implementations, a protection device includes a first silicon controlled rectifier (SCR) and a first diode for providing protection between a signal node and a power high supply node, a second SCR and a second diode for providing protection between the signal node and a power low supply node, and a third SCR and a third diode for providing protection between the power high supply node and the power low supply node. The SCR and diode structures are integrated in a common circuit layout, such that certain wells and active regions are shared between structures. Configuring the protection device in this manner enables in-suit input/output interface protection using a single cell. The protection device is suitable for monolithic data conversion interface protection in sub 3V operation. | 06-19-2014 |
20140167106 | INTERFACE PROTECTION DEVICE WITH INTEGRATED SUPPLY CLAMP AND METHOD OF FORMING THE SAME - Protection circuit architectures with integrated supply clamps and methods of forming the same are provided herein. In certain implementation, an integrated circuit interface protection device includes a first diode protection structure and a first thyristor protection structure electrically connected in parallel between a signal pin a power high supply. Additionally, the protection device includes a second diode protection structure and a second thyristor protection structure electrically connected in parallel between the signal pin and a power low supply. Furthermore, the protection device includes a third diode protection structure and a third thyristor protection structure electrically connected in parallel between the power high supply and the power low supply. The third thyristor protection structure and the third diode protection structure are synthesized as part of the integrated circuit interface and can share at least a portion of the wells and/or diffusion regions associated with the first and second thyristor protection structures. | 06-19-2014 |
20140332843 | JUNCTION-ISOLATED BLOCKING VOLTAGE STRUCTURES WITH INTEGRATED PROTECTION STRUCTURES - Junction-isolated blocking voltage devices and methods of forming the same are provided. In certain implementations, a blocking voltage device includes an anode terminal electrically connected to a first p-well, a cathode terminal electrically connected to a first n-well, a ground terminal electrically connected to a second p-well, and an n-type isolation layer for isolating the first p-well from a p-type substrate. The first p-well and the first n-well operate as a blocking diode. The blocking voltage device further includes a PNPN silicon controlled rectifier (SCR) associated with a P+ region formed in the first n-well, the first n-well, the first p-well, and an N+ region formed in the first p-well. Additionally, the blocking voltage device further includes an NPNPN bidirectional SCR associated with an N+ region formed in the first p-well, the first p-well, the n-type isolation layer, the second p-well, and an N+ region formed in the second p-well. | 11-13-2014 |
20140339601 | DUAL-TUB JUNCTION-ISOLATED VOLTAGE CLAMP DEVICES FOR PROTECTING LOW VOLTAGE CIRCUITRY CONNECTED BETWEEN HIGH VOLTAGE INTERFACE PINS AND METHODS OF FORMING THE SAME - Dual-tub junction-isolated voltage clamp devices and methods of forming the same are provided herein. The voltage clamp device can provide junction-isolated protection to low voltage circuitry connected between first and second high voltage interface pins. In certain implementations, a voltage clamp device includes a PNPN protection structure disposed in a p-well, a PN diode protection structure disposed in an n-well positioned adjacent the p-well, a p-type tub surrounding the p-well and the n-well, and an n-type tub surrounding the p-type tub. The p-type tub and the n-type tub provide junction isolation, the p-type tub can be electrically floating, and the n-type tub can be electrically connected to the second pin. The first and second pins can operate at a voltage difference below the junction isolation breakdown, and the second pin can operate with higher voltage than the first pin. | 11-20-2014 |
20140346563 | ANALOG SWITCH WITH HIGH BIPOLAR BLOCKING VOLTAGE IN LOW VOLTAGE CMOS PROCESS - The disclosed technology relates to an apparatus for protection against transient electrical events. In one aspect, the apparatus includes an analog switch with high bipolar blocking voltage comprising a first p-type well region, a second p-type well region, a first n-type well region disposed between the first and second p-type well regions, and a deep n-type well region surrounding the first p-type well region, the second p-type well region, and the first n-type well region. The apparatus additionally includes a first native n-type region disposed between the first p-type well region the n-type well region and a second native n-type region disposed between the second p-type well region and n-type well region. The apparatus is configured such that the first p-type well region serves as an emitter/collector of a bidirectional PNP bipolar transistor. In addition, the apparatus is configured such that the first native n-type region, the first n-type well region, and the second native n-type region serves as a base of the bidirectional PNP bipolar transistor. Furthermore, the apparatus is configured such that the second p-type well region is configured as a collector/emitter of the bidirectional PNP bipolar transistor. | 11-27-2014 |
20150070806 | HIGH VOLTAGE TOLERANT SUPPLY CLAMP - Apparatus and methods for active detection, timing, and protection related to transient electrical events are disclosed. A detection circuit generates a detection signal in response to a transient electrical stress. First and second driver circuits of an integrated circuit, each driver having one or more bipolar junction transistors, activate based on the detection signal and generate activation signals. The one or more bipolar junction transistors of the first and second driver circuits are configured to conduct current substantially laterally across respective base regions. A discharge circuit, having an upper discharge element and a lower discharge element, receives the activation signals and activates to attenuate the transient electrical event. | 03-12-2015 |
20150076557 | SIGNAL IO PROTECTION DEVICES REFERENCED TO SINGLE POWER SUPPLY AND METHODS OF FORMING THE SAME - Signal IO protection devices referenced to a single supply are provided herein. In certain implementations, a protection device includes a first silicon controlled rectifier (SCR) and a first diode for providing protection between a signal node and a power supply network, such as a power low supply network or a power high supply network. The SCR and diode structures are integrated in a common circuit layout, such that certain wells and active regions are shared between structures. In other implementations, a protection device includes first and second SCRs for providing protection between the signal node and the power low supply network or between the signal node and the power high supply network, and the SCR structures are integrated in a common circuit layout. The protection devices are suitable for single cell data conversion interface protection to a single supply in sub 3V operation. | 03-19-2015 |