Patent application number | Description | Published |
20100018648 | WORKPIECE SUPPORT FOR A PLASMA REACTOR WITH CONTROLLED APPORTIONMENT OF RF POWER TO A PROCESS KIT RING - In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example. | 01-28-2010 |
20100119844 | Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas - Embodiments of the invention relate to component structures which are useful as apparatus in plasma processing chambers. Portions of the component structures are bonded together using oxyfluoride-comprising glazes, glass ceramics, and combinations thereof. The bonding material is resistant to halogen-containing plasmas and exhibits desirable mechanical properties. | 05-13-2010 |
20100129670 | Protective coatings resistant to reactive plasma processing - Embodiments of the invention relate to compositions of metal oxyfluoride-comprising glazes or metal fluoride-comprising glazes, glass ceramics, and combinations thereof which are useful as plasma-resistant solid substrates or plasma resistant protective coatings over other substrates. Also described are methods of fabricating various structures which incorporate such compositions, including solid substrates and coatings over the surface of a substrate which has a melting point which is higher than about 1600° C., such as aluminum oxide, aluminum nitride, quartz, silicon carbide, silicon nitride. | 05-27-2010 |
20100140222 | FILLED POLYMER COMPOSITION FOR ETCH CHAMBER COMPONENT - A filled polymer composition having improved plasma resistance is disclosed. The composition includes a particle filler dispersed in a polymer matrix. The particle filler can be Nb | 06-10-2010 |
20100156054 | HIGH TEMPERATURE ELECTROSTATIC CHUCK BONDING ADHESIVE - Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al | 06-24-2010 |
20100180426 | PARTICLE REDUCTION TREATMENT FOR GAS DELIVERY SYSTEM - Methods and apparatus for reducing particles in a gas delivery system are provided herein. In some embodiments, a method of fabricating a gas distribution apparatus, such as a gas distribution plate or nozzle, for a semiconductor process chamber includes providing a gas distribution apparatus having one or more apertures adapted to flow a gas therethrough. A slurry is flowed through the one or more apertures to remove a damaged surface from sidewalls of the plurality of apertures. In some embodiments, the gas distribution apparatus may be oxidized before or after flowing the slurry through the one or more apertures. In some embodiments, the gas distribution apparatus may be conditioned by providing RF power to the gas distribution plate for a desired period of time. | 07-22-2010 |
20120118510 | METHOD FOR DEBONDING COMPONENTS IN A CHAMBER - Embodiments of the invention provide a method for debonding chamber component used in a semiconductor processing chamber. In one embodiment, a method for debonding chamber components used in a semiconductor processing chamber includes providing a first chamber component and a second chamber component bonded by an adhesive material disposed at an interface defined between the first and the second chamber components, soaking the bonded first and the second chamber components into an organic solution for between about 8 hours to about 240 hours, and removing the bonded first and the second chamber from the organic solution; and mechanically separating the soaked first and the second chamber components. | 05-17-2012 |
20120255635 | METHOD AND APPARATUS FOR REFURBISHING GAS DISTRIBUTION PLATE SURFACES - Embodiments described herein generally relate to methods and apparatus for refurbishing a gas distribution plate assembly utilized in a deposition chamber or etch chamber. In one embodiment, a method for refurbishing a gas distribution plate assembly is provided. The method includes urging a faceplate of a gas distribution plate assembly against a polishing pad of a polishing device, the faceplate having a plurality of gas distribution holes disposed therein, providing relative motion between the faceplate and the polishing pad, and polishing the faceplate against the polishing pad. | 10-11-2012 |
20130216783 | CERAMIC ARTICLE WITH REDUCED SURFACE DEFECT DENSITY AND PROCESS FOR PRODUCING A CERAMIC ARTICLE - A machined ceramic article having an initial surface defect density and an initial surface roughness is provided. The machined ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The machined ceramic article is heat-treated in air atmosphere. The machined ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The machined ceramic article is then cooled at the ramping rate, wherein after the heat treatment the machined ceramic article has a reduced surface defect density and a reduced surface roughness. | 08-22-2013 |
20130216821 | HEAT TREATED CERAMIC SUBSTRATE HAVING CERAMIC COATING AND HEAT TREATMENT FOR COATED CERAMICS - A ceramic article having a ceramic substrate and a ceramic coating with an initial porosity and an initial amount of cracking is provided. The ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate, wherein after the heat treatment the ceramic coating has a reduced porosity and a reduced amount of cracking. | 08-22-2013 |
20130273313 | CERAMIC COATED RING AND PROCESS FOR APPLYING CERAMIC COATING - To manufacture a ceramic coated article, at least one surface of a quartz substrate having a ring shape is roughened to a roughness of approximately 100 micro-inches (μin) to approximately 300 μin. The quartz substrate is then coated with a ceramic coating comprising a yttrium containing oxide. The quartz substrate is then polished. | 10-17-2013 |
20130273327 | CERAMIC COATED ARTICLE AND PROCESS FOR APPLYING CERAMIC COATING - To manufacture a ceramic article, a ceramic body comprising Al | 10-17-2013 |
20130279066 | ELECTROSTATIC CHUCK WITH ADVANCED RF AND TEMPERATURE UNIFORMITY - Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein. | 10-24-2013 |
20130284373 | PLASMA RESISTANT CERAMIC COATED CONDUCTIVE ARTICLE - To manufacture a ceramic coated article, at least one surface of a conductive article is roughened to a roughness of approximately 100 micro-inches (μin) to approximately 300 μin. The conductive article may then be heated and coated with a ceramic coating comprising a yttrium containing oxide to a thickness of approximately 10-40 mil. | 10-31-2013 |
20130284374 | HIGH TEMPERATURE ELECTROSTATIC CHUCK WITH REAL-TIME HEAT ZONE REGULATING CAPABILITY - Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end. | 10-31-2013 |
20130284709 | ELECTROSTATIC CHUCK HAVING REDUCED POWER LOSS - Embodiments of the invention generally relate to an electrostatic chuck having reduced power loss, and methods and apparatus for reducing power loss in an electrostatic chuck, as well as methods for testing and manufacture thereof. In one embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a conductive base, and a ceramic body disposed on the conductive base, the ceramic body comprising an electrode and one or more heating elements embedded therein, wherein the ceramic body comprises a dissipation factor of about 0.11 to about 0.16 and a capacitance of about 750 picoFarads to about 950 picoFarads between the electrode and the one or more heating elements. | 10-31-2013 |
20130286530 | METHODS AND APPARATUS TOWARD PREVENTING ESC BONDING ADHESIVE EROSION - Embodiments of the present invention provide chamber components having a protective element for shielding bonding material from processing environments in a processing environment. The protective element may include protective seals, protective structures, erosion resistive fillers, or combinations thereof. Embodiments of the present invention reduce erosion of bonding material used in a processing chamber, thus, improving processing quality and reducing maintenance costs. | 10-31-2013 |
20130288037 | PLASMA SPRAY COATING PROCESS ENHANCEMENT FOR CRITICAL CHAMBER COMPONENTS - In an optimized method to apply a plasma sprayed coating of a yttrium containing oxide onto an article, a plasma power of between about 89-91 kW is selected for a plasma spraying system. Gas is flowed through the plasma spraying system at a selected gas flow rate of about 115-130 L/min. Ceramic powder comprising a yttrium containing oxide is fed into the plasma spraying system at a selected powder feed rate of about 10-30 g/min. A yttrium dominant ceramic coating is then formed on the article based on the selected power, the selected gas flow rate and the selected powder feed rate. | 10-31-2013 |
20130344285 | ADHESIVE MATERIAL USED FOR JOINING CHAMBER COMPONENTS - Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using an adhesive material with desired characteristics. In one embodiment, an adhesive material suitable for joining semiconductor chamber components includes an adhesive material having a Young's-modulus lower than 300 psi. In another embodiment, a semiconductor chamber component includes a first surface disposed adjacent a second surface, and an adhesive material coupling the first and second surfaces, wherein the adhesive material has a Young's modulus lower than 300 psi. | 12-26-2013 |
20140030486 | CHEMISTRY COMPATIBLE COATING MATERIAL FOR ADVANCED DEVICE ON-WAFER PARTICLE PERFORMANCE - To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, Al | 01-30-2014 |
20140030533 | INNOVATIVE TOP-COAT APPROACH FOR ADVANCED DEVICE ON-WAFER PARTICLE PERFORMANCE - To manufacture a coating for an article for a semiconductor processing chamber, the coating is applied to the article by a method including applying a sol-gel coating of Y | 01-30-2014 |
20140154465 | SUBSTRATE SUPPORT ASSEMBLY HAVING A PLASMA RESISTANT PROTECTIVE LAYER - A substrate support assembly comprises a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further comprises a protective layer covering an upper surface of the ceramic body, wherein the protective layer comprises at least one of yttrium aluminum garnet (YAG) or a ceramic compound comprising Y | 06-05-2014 |
20140177123 | SINGLE-BODY ELECTROSTATIC CHUCK - An electrostatic chuck includes a thermally conductive base having a plurality of heating elements disposed therein. A metal layer covers at least a portion of the thermally conductive base, wherein the metal layer shields the plurality of heating elements from radio frequency (RF) coupling and functions as an electrode for the electrostatic chuck. A plasma resistant dielectric layer covers the metal layer. | 06-26-2014 |
20140203526 | TEMPERATURE MANAGEMENT OF ALUMINIUM NITRIDE ELECTROSTATIC CHUCK - An unseasoned substrate support assembly includes a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further includes an upper surface of the ceramic body having a first portion proximate to a center of the upper surface of the ceramic body and having a first roughness profile and a second portion distal from the center of the upper surface of the ceramic body and having a second roughness profile with a lower roughness than the first roughness profile, wherein areas of the first and second portions are based on radial distances from the center of the ceramic body. | 07-24-2014 |
20140209027 | SHOWERHEAD HAVING A DETACHABLE GAS DISTRIBUTION PLATE - Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side; a gas distribution plate disposed proximate the second side of the base; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed between the base and gas distribution plate. | 07-31-2014 |
20140209242 | SUBSTRATE PROCESSING CHAMBER COMPONENTS INCORPORATING ANISOTROPIC MATERIALS - Substrate processing chamber components for use in substrate processing chambers are provided herein. In some embodiments, a substrate processing chamber component may include a body having a first surface, one or more heat exchangers disposed within the body below the first surface, and one or more anisotropic layers, wherein a separate anisotropic layer is disposed between each of the one or more heat exchangers and the first surface. | 07-31-2014 |
20140221188 | ENHANCED CLEANING PROCESS OF CHAMBER USED PLASMA SPRAY COATING WITHOUT DAMAGING COATING - A method including immersing a ceramic coated article into a bath including an HF acid solution having NH | 08-07-2014 |
20140349073 | AEROSOL DEPOSITION COATING FOR SEMICONDUCTOR CHAMBER COMPONENTS - A method for coating a component for use in a semiconductor chamber for plasma etching includes providing the component and loading the component in a deposition chamber. A pressure in the deposition chamber is reduced to below atmospheric pressure. A coating is deposited on the component by spraying an aerosol comprising a suspension of a first type of metal oxide nanoparticle and a second type of metal oxide nanoparticle onto the component at approximately room temperature. | 11-27-2014 |
20140363596 | RARE-EARTH OXIDE BASED EROSION RESISTANT COATINGS FOR SEMICONDUCTOR APPLICATION - An article includes a body that is coated with a ceramic coating. The ceramic coating may include Y | 12-11-2014 |
20140377504 | PLASMA EROSION RESISTANT RARE-EARTH OXIDE BASED THIN FILM COATINGS - An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y | 12-25-2014 |
20150021324 | ION ASSISTED DEPOSITION FOR RARE-EARTH OXIDE BASED COATINGS ON LIDS AND NOZZLES - A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less. | 01-22-2015 |
20150024155 | ION ASSISTED DEPOSITION FOR RARE-EARTH OXIDE BASED THIN FILM COATINGS ON PROCESS RINGS - A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of less than 6 micro-inches. | 01-22-2015 |
20150064450 | ANODIZATION ARCHITECTURE FOR ELECTRO-PLATE ADHESION - To manufacture a chamber component for a processing chamber a first anodization layer is formed on a metallic article with impurities, the first anodization layer having a thickness greater than about 100 nm, and an aluminum coating is formed on the first anodization layer, the aluminum coating being substantially free from impurities. A second anodization layer can be formed on the aluminum coating. | 03-05-2015 |
20150075714 | PLASMA SPRAY COATING ENHANCEMENT USING PLASMA FLAME HEAT TREATMENT - A method for forming a plasma resistant ceramic coating on an article includes placing the article into a chamber or spray cell of a plasma spraying system. A ceramic powder is then fed into the plasma spraying system at a powder feed rate, and a plasma resistant ceramic coating is deposited onto at least one surface of the article in a plasma spray process by the plasma spray system. The plasma spray system is then used to perform an in-situ plasma flame heat treatment of the plasma resistant ceramic coating to form crust on the plasma resistant ceramic coating. | 03-19-2015 |
20150079370 | COATING ARCHITECTURE FOR PLASMA SPRAYED CHAMBER COMPONENTS - A method of plasma spraying an article comprises inserting the article into a vacuum chamber for a low pressure plasma spraying system. A low pressure plasma spray process is then performed by the low pressure plasma spraying system to form a first plasma resistant layer having a thickness of 20-500 microns and a porosity of over 1%. A plasma spray thin film, plasma spray chemical vapor deposition or plasma spray physical vapor deposition process is then performed by the low pressure plasma spraying system to deposit a second plasma resistant layer on the first plasma resistant layer, the second plasma resistant layer having a thickness of less than 50 microns and a porosity of less than 1%. | 03-19-2015 |