Patent application number | Description | Published |
20130086039 | REAL-TIME SECURITY MODEL PROVIDING INTERMEDIATE QUERY RESULTS TO A USER IN A FEDERATED DATA SYSTEM - The subject technology provides configurations for receiving a query for data stored across data systems in which the query is associated with a user. It is determined if the user has permission to execute an operation from the query at a data in which the operation is executed upon at least one table provided by the data system. The subject technology determines if the operation corresponds to a cache object in a cache registry if the user has permission. Each cache object is owned by a cache manager user. A view associated with the user is created that provides temporary access privileges to the cache object corresponding to the operation in which the cache object includes results of the operation executed in the query and the cache object is owned by the cache manager user. The results of the operation are then provided in the created view to the user. | 04-04-2013 |
20130086064 | SPREADSHEET BASED DATA STORE INTERFACE - A computer-implemented method for exploring external data sources includes selecting a first function from a function library in a spreadsheet application based on a first user input, designating a first data source for the first function based on a second user input, wherein the first data source comprises a first dataset stored externally to the spreadsheet application, and arranging a first cell formula comprising the first function and a first identifier for the first data source in a first cell of a spreadsheet. The method further includes selecting an output function from the function library based on a third user input, designating a source function's reference based on a fourth user input, designating an output location in the spreadsheet based on a firth user input, and arranging a second cell formula including the selected output function, the designated source function's reference and the designated output location in a second cell of the spreadsheet. The method further includes translating the first cell formula contained in the first cell referenced as the source function to the output function into a data query for a data engine in response to a refresh action and sending the data query to the data engine, wherein the data engine is configured to execute the data query against the first dataset. | 04-04-2013 |
20130091122 | FEDERATED QUERY ENGINE FOR FEDERATION OF DATA QUERIES ACROSS STRUCTURE AND UNSTRUCTURED DATA - The subject technology provides querying structured and unstructured data across disparate incompatible systems with a single language and connection point. Cost based optimizations are provided for executing the query. In some configurations, logical plans for executing a query are generated. For each of the logical plans, the subject technology generates a set of physical plans for executing the query on data systems, determines an execution cost for each physical plan from the physical plans, and selects a respective physical plan with a lowest determined execution cost among the determined execution cost for each physical plan. A physical plan is then selected for execution with a lowest execution cost among the selected respective physical plans of each of the logical plans. Data from an operation from the query may then be persisted and then used for generating a new set of logical and physical plans for executing a remaining set of operations from the query. | 04-11-2013 |
Patent application number | Description | Published |
20090057264 | HIGH THROUGHPUT LOW TOPOGRAPHY COPPER CMP PROCESS - Embodiments described herein generally provide a method for processing metals disposed on a substrate in a chemical mechanical polishing system. The apparatus advantageously facilitates efficient bulk and residual conductive material removal from a substrate. In one embodiment a method for chemical mechanical polishing (CMP) of a conductive material disposed on a substrate is provided. A substrate comprising a conductive material disposed over an underlying barrier material is positioned on a first platen containing a first polishing pad. The substrate is polished on a first platen to remove a bulk portion of the conductive material. A rate quench process is performed in order to reduce a metal ion concentration in the polishing slurry. The substrate is polished on the first platen to breakthrough the conductive material exposing a portion of the underlying barrier material. | 03-05-2009 |
20090061743 | METHOD OF SOFT PAD PREPARATION TO REDUCE REMOVAL RATE RAMP-UP EFFECT AND TO STABILIZE DEFECT RATE - A method and apparatus for pre-conditioning a new soft polishing pad and processing a substrate on a soft polishing pad is described. The method includes coupling a soft polishing pad to a platen, contacting the processing surface of the soft polishing pad with a conditioning disk, applying a pressure conditioning disk, removing the conditioning disk from contact with the processing surface of the soft polishing pad, and contacting a first substrate with the processing surface of the soft polishing pad to perform a polishing process on the first substrate. | 03-05-2009 |
20090264056 | SUBSTRATE HOLDER WITH LIQUID SUPPORTING SURFACE - Embodiments of the present invention generally relate to a substrate transferring system. One embodiment of the present invention provides a substrate holder comprising a pedestal plate, a basin wall extending from a top surface of the pedestal plate, wherein the basin wall has a substantially leveled top surface, the basin wall and the pedestal plate define a basin configured to retain a liquid therein, and a liquid port opening to the basin, wherein the liquid port is configured to flow a liquid to the basin and allow the liquid to overflow from the basin wall, and a top surface of the overflow liquid in the basin is configured to support a substrate without contacting the basin wall or the pedestal plate. | 10-22-2009 |
20100081360 | USE OF PAD CONDITIONING IN TEMPERATURE CONTROLLED CMP - A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range. | 04-01-2010 |
20100120330 | ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING - A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment. | 05-13-2010 |
20100120331 | ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING - A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected time at which each substrate will reach a target thickness is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates reach the target thickness closer to the same time than without the adjustment. | 05-13-2010 |
20100279435 | TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING - A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system. | 11-04-2010 |
20110300775 | Control of Overpolishing of Multiple Substrates on the Same Platen in Chemical Mechanical Polishing - A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time. | 12-08-2011 |
20110300776 | TUNING OF POLISHING PROCESS IN MULTI-CARRIER HEAD PER PLATEN POLISHING STATION - An apparatus and method for simulating a substrate being polished in a multiple carrier head per platen station when no substrate is provided in one or more of the multiple carrier heads is described. In one embodiment, a method for processing a substrate includes providing a single substrate to a polishing station adapted to process a plurality of substrates on a single polishing pad using at least a first carrier head and a second carrier head, retaining the single substrate in the first carrier head while the second carrier head remains substrate-free, urging the first carrier head and the second carrier head toward a polishing surface of the polishing pad; and providing relative movement between the polishing pad and the first carrier head. | 12-08-2011 |
20140004626 | TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING | 01-02-2014 |
20140024293 | Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing - A polishing method includes simultaneously polishing a first substrate and a second substrate on the same polishing pad, storing a default overpolishing time, determining first and second polishing endpoint times of the first and substrates with the in-situ monitoring system, determining a difference between the first and second polishing endpoint times, and determining whether the difference exceeds a threshold. If the difference is less than the threshold, then an overpolishing stop time is calculated and polishing of the first substrate and the second substrates is halted simultaneously at the overpolishing stop time. If the difference is greater than the threshold, then first and second overpolishing stop times that equal the first and second endpoint times plus the default overpolishing time are calculated, and polishing of the first and second substrates is halted at the first and second overpolishing stop times, respectively. | 01-23-2014 |
20140030956 | CONTROL OF POLISHING OF MULTIPLE SUBSTRATES ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING - A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values. | 01-30-2014 |
20140222188 | ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING - A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate. | 08-07-2014 |