Patent application number | Description | Published |
20140217263 | IMAGE SENSOR CONFIGURED TO REDUCE BLOOMING DURING IDLE PERIOD - Among other things, techniques and systems are provided for identifying when a pixel of an image sensor is in an idle period. A flag is utilized to differentiate when the pixel is in an idle period and when the pixel is in an integration period. When the flag indicates that the pixel is in an idle period, a blooming operation is performed on the pixel to reduce an amount of electrical charge that has accumulated at the pixel or to mitigate electrical charge from accumulating at the pixel. In this way, the blooming operation reduces a probability that the photosensitive sensor becomes saturated during an idle period of the pixel, and thus reduces the likelihood of electrical charge from a pixel that is not intended contribute to an image from spilling over and potentially contaminating a pixel that is intended to contribute to the image. | 08-07-2014 |
20140264503 | Active Pixel Sensor Having a Raised Source/Drain - An integrated circuit having an array of APS cells. Each cell in the array has at least one transistor source or drain region that is raised relative to a channel region formed in a semiconductor substrate. The raised source or drain region includes doped polysilicon deposited on the surface of the semiconductor body and a region of the bodyextending to the channel region that has been doped to an opposite doping type from that of the channel region by diffusion of dopants from the deposited polysilicon. | 09-18-2014 |
20150060964 | MECHANISMS FOR FORMING IMAGE SENSOR DEVICE - Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and one photodetector formed in the semiconductor substrate. The image sensor device also includes one gate stack formed over the semiconductor substrate. The gate stack includes multiple polysilicon layers. | 03-05-2015 |
20150155322 | IMAGE SENSOR WITH REDUCED OPTICAL PATH - Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler gird portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler gird portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor. | 06-04-2015 |
20150279894 | CMOS Image Sensor with Epitaxial Passivation Layer - The present disclosure provides a complimentary metal-oxide-semiconductor (CMOS) image sensor (CIS) device. In accordance with some embodiments, the device includes a semiconductor region having a front surface and a back surface; a light-sensing region extending from the front surface towards the back surface within the semiconductor region; a gate stack formed over the semiconductor region; and at least one epitaxial passivation layer disposed at least one of over and below the light-sensing region. In some embodiments, the at least one epitaxial passivation layer includes a p-type doped silicon (Si) layer. | 10-01-2015 |
20150364519 | ACTIVE PIXEL SENSOR HAVING A RAISED SOURCE/DRAIN - An integrated circuit having an array of APS cells. Each cell in the array has at least one transistor source or drain region that is raised relative to a channel region formed in a semiconductor substrate. The raised source or drain region includes doped polysilicon deposited on the surface of the semiconductor body and a region of the bodyextending to the channel region that has been doped to an opposite doping type from that of the channel region by diffusion of dopants from the deposited polysilicon. | 12-17-2015 |
20160080669 | IMAGE SENSOR WITH EMBEDDED INFRARED FILTER LAYER - An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer. | 03-17-2016 |
20160099271 | INFRARED IMAGE SENSOR - An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter. The micro-lens layer is disposed on the color filter layer. | 04-07-2016 |