Patent application number | Description | Published |
20100104981 | COLORED DISPERSION, PHOTORESIST COMPOSITION AND BLACK MATRIX - A colored dispersion according to the present invention comprises a resin including monomers of Formulas 1 to 4, as a binder resin. | 04-29-2010 |
20100201925 | FLUORENE-BASED POLYMER CONTAINING URETHANE GROUPS, PREPARATION METHOD THEREOF AND NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION COMPRISING THE SAME - Provided is a novel fluorene-based polymer having urethane bonds and a method for preparing the fluorene-based polymer. According to the method, a diol compound is condensed with a diisocyanate instead of an acid dianhydride, and then an acid anhydride is reacted with the reaction mixture to introduce desired acid groups into the final polymer. Further provided is a negative-type photosensitive resin composition comprising of the fluorene-based polymer as a binder resin. The composition exhibits improved chemical resistance, good development margin and high sensitivity due to presence of the acid groups despite the low molecular weight of the fluorene-based polymer. | 08-12-2010 |
20100331439 | MULTIFUNCTION URETHANE MONOMER, METHOD OF MANUFACTURING THE MONOMER AND PHOTOSENSITIVE RESIN COMPOSITION INCLUDING THE MONOMER - Disclosed is a multifunctional urethane monomer prepared by reacting (a) an epoxy compound having two or more epoxy groups, (b) a diol compound having an acidic group and (c) a compound having an ethylenically unsaturated group and an isocyanate group with one another. The photosensitive resin composition comprising the multifunctional urethane monomer has low viscosity, superior sensitivity, excellent chemical resistance and heat-resistance and high development margin. | 12-30-2010 |
20110101268 | PHOTOSENSITIVE RESIN COMPOSITION FOR BLACK MATRIX - A photosensitive resin composition for a black matrix and a black matrix formed with the same are provided. The photosensitive resin composition for a black matrix includes a solvent consisting of 5-30 weight % of a first solvent having a boiling point of 110-159° C., 55-90 weight % of a second solvent having a boiling point of 160-200° C., and 3-15 weight % of a third solvent having a boiling point of 201-280° C., and the first solvent, the second solvent, and the third solvent are an aliphatic compound and use at least one solvent composition selected from a group consisting of alkyl ester, alkyl ketone, alkyl ether, and alkyl alcohol, and thus a uniform thin film having no surface defect can be obtained, and the photosensitive resin composition has an excellent process property while securing a high light shielding property and thus a black matrix pattern having a few defect can be obtained, and is thus useful for a liquid crystal display. | 05-05-2011 |
20110151379 | BLACK MATRIX COMPOSITION WITH HIGH LIGHT-SHIELDING AND IMPROVED ADHESION PROPERTIES - The present invention relates to a black matrix photosensitive resin composition having high light-shielding and improved adhesion properties and a black matrix for a liquid crystal display including the same. The black matrix photosensitive resin composition comprises an alkali-soluble binder resin, a multi-functional monomer having an ethylenic unsaturated double bond, a photopolymerization initiator, an adhesion accelerator, a solvent, and a colorant comprising black pigments. A Cardo type binder is mixed in an amount of 10 to 90 wt % and an acryl type binder is mixed in an amount of 10 to 90 wt % based on a total weight of the alkali-soluble binder resin including the Cardo type binder and the acryl type binder. | 06-23-2011 |
20120189961 | PHOTOSENSITIVE RESIN COMPOSITION AND PHOTOSENSITIVE MATERIAL COMPRISING THE SAME - The present invention relates to a photosensitive resin composition and a photosensitive material comprising the same. The photosensitive resin composition according to an exemplary embodiment of the present invention may comprise two multi-functional monomers where structures of side chains comprising unsaturated double bonds are different from each other while a composition ratio is changed. Accordingly, in the exemplary embodiment of the present invention, processability is excellent, and it is possible to decrease defects by a rupture when a LCD substrate is sealed and substrate separation defects due to an impact to the LCD products by improving an adhesion property to a lower substrate after a hard baking process. | 07-26-2012 |
20130030077 | POLYMER AND PHOTOSENSITIVE RESIN COMPOSITION COMPRISING THE SAME - The present invention relates to a polymer having a novel structure and a photosensitive resin composition comprising the same. A photosensitive resin composition comprising a polymer according to the present invention has a high taper angle and excellent adhesion strength. Accordingly, the photosensitive resin composition comprising the polymer according to the present invention may be applied to various photosensitive materials, and particularly, may be preferably applied when a color filter pattern for LCD is manufactured. | 01-31-2013 |
Patent application number | Description | Published |
20080251858 | FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved. | 10-16-2008 |
20090146184 | SEMICONDUCTOR DEVICE WITH T-GATE ELECTRODE AND METHOD FOR FABRICATING THE SAME - Provided are a semiconductor device with a T-gate electrode capable of improving stability and a high frequency characteristic of the semiconductor device by reducing source resistance, parasitic capacitance, and gate resistance and a method of fabricating the same. In the semiconductor device, in order to form source and drain electrodes and the T-gate electrode on a substrate, first and second protective layers constructed with silicon oxide layers or silicon nitride layers are formed on sides of a supporting part under a head part of the T-gate electrode, and the second protective layer constructed with a silicon oxide layer or silicon nitride layer is formed on sides of the source and drain electrodes. Accordingly, it is possible to protect an activated region of the semiconductor device and reduce gate-drain parasitic capacitance and gate-source parasitic capacitance. | 06-11-2009 |
20090170250 | TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer layer, a first Si planar doping layer, a first conductive layer, a second Si planar doping layer, and a second conductive layer, which are sequentially stacked, the second Si planar doping layer having a doping concentration different from that of the first Si planar doping layer; a source electrode and a drain electrode diffusing into the first Si planar doping layer to a predetermined depth and disposed on both sides of the second conductive layer to form an ohmic contact; and a gate electrode disposed on the second conductive layer between the source and drain electrodes and being in contact with the second conductive layer. In this structure, both isolation and switching speed of the transistor can be increased. Also, the maximum voltage limit applied to the transistor is increased due to increases in gate turn-on voltage and threshold voltage and a reduction in parallel conduction element. As a result, the power handling capability of the transistor can be improved, thus improving a high-power low-distortion characteristic and an isolation characteristic. | 07-02-2009 |
20100133551 | HIGH-SPEED OPTICAL INTERCONNECTION DEVICE - Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors. | 06-03-2010 |
20110037521 | POWER AMPLIFIER HAVING DEPLETION MODE HIGH ELECTRON MOBILITY TRANSISTOR - Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor. | 02-17-2011 |
20110143507 | TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a transistor of a semiconductor device and a method of fabricating the same. The transistor of a semiconductor device includes an epitaxial substrate having a buffer layer, a first silicon (Si) planar doped layer, a first conductive layer, a second Si planar doped layer having a different dopant concentration from the first Si planar doped layer, and a second conductive layer, which are sequentially formed on a semi-insulating substrate; a source electrode and a drain electrode formed on both sides of the second conductive layer to penetrate the first Si planar doped layer to a predetermined depth to form an ohmic contact; and a gate electrode formed on the second conductive layer between the source electrode and the drain electrode to form a contact with the second conductive layer, wherein the gate electrode, the source electrode and the drain electrode are electrically insulated by an insulating layer, and a predetermined part of an upper part of the gate electrode is formed to overlap at least one of the source electrode and the drain electrode. Therefore, a maximum voltage that can be applied to the switching device is increased due to increases of a gate turn-on voltage and a breakdown voltage, and decrease of a parallel conduction component. As a result of this improved power handling capability, high-power and low-distortion characteristics and high isolation can be expected from the switching device. | 06-16-2011 |
20130277717 | FREQUENCY CONTROL DEVICE HAVING IMPROVED ISOLATION FEATURE - A switch device using a frequency control device having an improved isolation feature is provided. The switch device may include a transmission line comprising an input terminal and an output terminal, and a frequency control device to switch a frequency input to the input terminal so that the frequency is selectively transferred to the output terminal. The transmission line may be formed in the form of an air bridge, in an upper portion of the frequency control device. | 10-24-2013 |
20130278332 | DOHERTY AMPLIFYING APPARATUS AND METHOD - Disclosed is a Doherty amplifying apparatus and method that ensures efficiency in linearity of an input signal by linearizing an applied signal using a linearization unit by analog pre-distortion, and amplifying the linearized signal using a primary amplifier and a secondary amplifier. | 10-24-2013 |
20130293295 | COMPACT RF POWER AMPLIFIER - Provided is a compact RF power amplifier including: a Doherty amplifier comprising a carrier amplifier comprising a first input impedance matching unit, a first amplifier, and a first output impedance matching unit, and a peaking amplifier comprising a second input impedance matching unit, a second amplifier, and a second output impedance matching unit, in which when a power level of the first RF amplified signal reaches a predetermined power level, the peaking amplifier outputs the second RF amplified signal. | 11-07-2013 |
20140184438 | TRANSMIT/RECEIVE MODULE FOR RADAR AND ASSEMBLING METHOD THEREOF - A transmit/receive module for radar may include a radio frequency (RF) circuit unit including an RF substrate and an RF part; and a direct current (DC) power supply circuit unit including a printed circuit board (PCB) and a DC power supply circuit part. The RF circuit unit and the DC power supply circuit unit may be disposed so that a rear surface of the RF circuit unit faces a rear surface of the DC power supply circuit unit, and may be assembled to have a separate space using at least one separation wall. | 07-03-2014 |
20150137877 | BIAS CIRCUIT USING NEGATIVE VOLTAGE - Provided is a bias circuit. The bias circuit includes: a first resistor connected between a ground terminal and a first node; a first bias transistor having a drain connected to the first node and a source connected to a second node; a second bias transistor having a drain connected to the second node and a source connected to a negative voltage terminal; a third bias transistor having a drain connected to the ground terminal and a source connected to a third node; and a second resistor connected between the third node and the negative voltage terminal, wherein a gate of the first bias transistor is connected to the second node; a gate of the second bias transistor is connected to the negative voltage terminal; a gate of the third bias transistor is connected to the first node; and a gate bias voltage signal is outputted through the third node. | 05-21-2015 |
20150137907 | DIRECTIONAL COUPLER HAVING HIGH ISOLATION - Provided is a directional coupler having high isolation, the directional coupler including a first directional coupler including a first main line and a first sub-line, and a second directional coupler including a second main line and a second sub-line, wherein the first directional coupler is connected to the second directional coupler in series. | 05-21-2015 |
Patent application number | Description | Published |
20090298831 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION INCLUDING THE SAME AND USE THEREOF - The present invention relates to novel piperazine derivatives or pharmaceutically acceptable salts thereof, a process for preparing the same, and in particular, a high binding for Serotonin 1A(5-hydroxytryptamine; 5-HT1A) receptor, a pharmaceutical composition for treatment and/or prevention of depression and anxiety including an effective amount of the piperazine compound, and a method of treating depression, anxiety and other conditions related to 5-HT1A receptor in a mammal. | 12-03-2009 |
20090298851 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION COMPRISING THE SAME AND USE THEREOF - The present invention relates to a novel piperazine derivative or pharmaceutically acceptable salt thereof, a process for preparing the same, a pharmaceutical composition for treating central nervous system diseases comprising an effective amount of the piperazine compound and a method of treating central nervous system (CNS) disorder such as psychosis in a mammal. | 12-03-2009 |
20110118264 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION INCLUDING THE SAME AND USE THEREOF - The present invention relates to novel piperazine derivatives or pharmaceutically acceptable salts thereof, a process for preparing the same, and in particular, a high binding for Serotonin 1A(5-hydroxytryptamine; 5-HT1A) receptor, a pharmaceutical composition for treatment and/or prevention of depression and anxiety including an effective amount of the piperazine compound, and a method of treating depression, anxiety and other conditions related to 5-HT1A receptor in a mammal | 05-19-2011 |
Patent application number | Description | Published |
20110064000 | DEVICE AND METHOD FOR MEASURING LOCATION OF TERMINAL - A terminal location measuring device includes a database for storing registration information of a plurality of access points (AP's) forming a first infrastructure system for wireless LAN-based indoor location determination. The terminal location measuring device sets a search range of a database by using location information of the terminal acquired through a second infrastructure system that is different from the first infrastructure system, an identifier of at least one of a plurality of AP's, and a signal measurement value. The terminal location measuring device extracts registration information of an AP having the same identifier as at least one AP within the search range of the database, and measures a location of the terminal by using registration information of the AP. | 03-17-2011 |
20130150090 | APPARATUS AND METHOD FOR PROVIDING LOCATION-BASED SERVICE - Disclosed herein are an apparatus and method for providing a location-based service. The apparatus includes a location-based service server and a wireless communication infrastructure location DB. When a mobile payment service is performed for a member store terminal using a user mobile terminal, the location-based service server receives measurement information about a wireless communication infrastructure and information about the location of the member store from the mobile terminal, and generates information about the location of the wireless communication infrastructure using the received measurement information about the wireless communication infrastructure and the information about the location of the member store. The wireless communication infrastructure location DB stores the generated information about the location of the wireless communication infrastructure. | 06-13-2013 |
20130197799 | APPARATUS AND METHOD FOR DETERMINING INDOOR COLLECTION POINTS AND COLLECTING HETEROGENEOUS INFRASTRUCTURE MEASUREMENT INFORMATION - Disclosed herein is an apparatus and method for determining indoor collection points and collecting heterogeneous infrastructure measurement information. The apparatus includes a sensor module unit for sensing a motion and a location. An indoor map DB includes attribute information of an indoor space and an indoor map. A collection route generation unit generates a collection route on the indoor map depending on collection conditions. A collection point determination unit determines a collection point from which the heterogeneous infrastructure measurement information is to be collected on the collection route while moving, based on information of the sensor module unit and the indoor map DB. A heterogeneous infrastructure measurement information collection unit collects heterogeneous infrastructure measurement information from the collection point. An information combination unit generates results of collection by combining the collection point with the heterogeneous infrastructure measurement information at the collection point. | 08-01-2013 |
20130273939 | METHOD AND APPARATUS FOR ESTIMATING LOCATION OF PEDESTRIAN USING STEP LENGTH ESTIMATION MODEL PARAMETERS - Disclosed herein is a method and apparatus for estimating the location of a pedestrian using step length estimation model parameters. In the method of estimating a location of a pedestrian according to the present invention, mobile User Equipment (UE) having sensors generates positioning measurement information. The mobile UE requests positioning assistance information from a positioning server. The positioning server generates the positioning assistance information. The positioning server provides the positioning assistance information to the mobile UE. The mobile UE performs location estimation of the pedestrian using the positioning measurement information and the positioning assistance information. | 10-17-2013 |
20130281116 | METHOD AND APPARATUS FOR COMPENSATING ESTIMATED LOCATION OF WIRELESS NETWORK ELEMENTS ESTIMATED FROM INFORMATION COLLECTED BY HETEROGENEOUS TERMINALS - A method and apparatus for compensating an estimated location of a wireless network element from information collected by heterogeneous terminals rae provided. The method may include receiving information on a received signal strength indication (RSSI) of a wireless network element and location information of a heterogeneous terminal from the heterogeneous terminal by a wireless network element positioning server, compensating the information on the RSSI received from the heterogeneous terminal into information on an RSSI received from a predetermined reference terminal, using a difference value model of the RSSI of the wireless network element between heterogeneous terminals, the difference model generated in advance, and estimating a location of the wireless network element using the compensated information on the RSSI from the reference terminal and the received location information. | 10-24-2013 |
20150189478 | APPARATUS AND METHOD FOR LOADING RADIOMAP DATABASE, AND TERMINAL DEVICE - An apparatus and method for loading a radiomap database (DB) and a terminal device are disclosed. The apparatus for loading a radiomap DB includes a moving information calculation unit, and a loading performance unit. The moving information calculation unit calculates the moving information of a terminal based on the difference between a previous location and estimated final location of the terminal as the terminal moves. The loading performance unit loads a radiomap DB, including information about a neighboring node of each reference point, and a radiomap DB, including information about a neighboring node of a reference point, located in a direction in which the terminal moves, based on the moving information calculated by the moving information calculation unit. | 07-02-2015 |
20150201303 | APPARATUS AND METHOD FOR CORRECTING LOCATION OF BASE STATION - Disclosed herein is an apparatus and method for correcting the location of a base station. The apparatus includes a data collection unit for receiving collected data including collection places and scan data acquired from the collection places from a collection-only terminal, and receiving scan data having no collection places from a user service terminal. A determination unit obtains correlations between respective base stations based on a number of times each base station in an identical search group is found in a search using the collected data or the scan data, and determines whether a base station has been moved, deleted or added, based on the correlations between respective base stations. A location specification unit specifies a location of the corresponding base station that has changed due to any one of the movement, deletion, and addition of the base station, based on results of the determination. | 07-16-2015 |