Patent application number | Description | Published |
20090069042 | Outer Loop Transmit Power Control in Wireless Communication Systems - Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop. | 03-12-2009 |
20100006817 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer arranged around at least a portion of the nanowire core. The nanowire core and the shell layer form a pn or pin junction that in operation provides an active region for carrier generation or carrier recombination. Quantum dots adapted to act as carrier recombination centres or carrier generation centres are arranged in the active region. By using the nanowire core as template for formation of the quantum dots and the shell layer, quantum dots of homogeneous size and uniform distribution can be obtained. Basically, the optoelectronic semiconductor device can be used for light generation or light absorption. In the former case the optoelectronic semiconductor device is a light emitting diode or a laser diode and in the latter case the optoelectronic semiconductor device is a photoelectric device, such as a photo diode, a photo detector or a solar cell. | 01-14-2010 |
20100102380 | METHOD OF PRODUCING PRECISION VERTICAL AND HORIZONTAL LAYERS IN A VERTICAL SEMICONDUCTOR STRUCTURE - The present invention relates to providing layers of different thickness on vertical and horizontal surfaces ( | 04-29-2010 |
20100148149 | ELEVATED LED AND METHOD OF PRODUCING SUCH - The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light. | 06-17-2010 |
20100176459 | ASSEMBLY OF NANOSCALED FIELD EFFECT TRANSISTORS - The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic. | 07-15-2010 |
20100221882 | Nanoelectronic structure and method of producing such - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 09-02-2010 |
20100252808 | NANOWIRE GROWTH ON DISSIMILAR MATERIAL - The present invention relates to growth of III-V semiconductor nanowires ( | 10-07-2010 |
20110089400 | NANOWIRE WRAP GATE DEVICES - The present invention provides a semiconductor device comprising at least a first semiconductor nanowire ( | 04-21-2011 |
20110140086 | NANOSTRUCTURED MEMORY DEVICE - The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire ( | 06-16-2011 |
20110180894 | NANOSTRUCTURED PHOTODIODE - The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions ( | 07-28-2011 |
20110254034 | NANOSTRUCTURED LED - The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance. | 10-20-2011 |
20110316019 | Nanoelectronic Structure and Method of Producing Such - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 12-29-2011 |
20120145990 | NANOWIRE GROWTH ON DISSIMILAR MATERIAL - The present invention relates to growth of III-V semiconductor nanowires ( | 06-14-2012 |
20120211727 | Method of Producing Precision Vertical and Horizontal Layers in a Vertical Semiconductor Structure - The present invention relates to providing layers of different thickness on vertical and horizontal surfaces ( | 08-23-2012 |
20120302279 | Outer Loop Transmit Power Control in Wireless Communication Systems - Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop. | 11-29-2012 |
20130001511 | Elevated LED - The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light. | 01-03-2013 |
20130203242 | METHOD FOR MANUFACTURING A NANOWIRE STRUCTURE - The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires ( | 08-08-2013 |
20140103423 | METHOD OF PRODUCING PRECISION VERTICAL AND HORIZONTAL LAYERS IN A VERTICAL SEMICONDUCTOR STRUCTURE - The present invention relates to providing layers of different thickness on vertical and horizontal surfaces ( | 04-17-2014 |
20140175372 | Recessed Contact to Semiconductor Nanowires - A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire. | 06-26-2014 |
20140179087 | NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 06-26-2014 |
20140239327 | NANOSTRUCTURED LED - The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance. | 08-28-2014 |
20140246650 | NANOSTRUCTURED DEVICE - A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n- junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction. | 09-04-2014 |
20140312381 | NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 10-23-2014 |
20140363912 | Multicolor LED and Method of Fabricating Thereof - A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template. | 12-11-2014 |
20150014631 | GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS - GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics. | 01-15-2015 |
20150072868 | NANOCAPILLARY DEVICE FOR BIOMOLECULE DETECTION, A FLUIDIC NETWORK STRUCTURE AND A METHOD OF MANUFACTURING THEREOF - A device includes at least one nanoscale capillary and means for applying an electric voltage, said means being adapted to create an electric field at least in said capillary when said electric voltage is applied, so that, when said electric voltage is applied, a charged molecule or particle placed within the created electric field can be electrically controlled. A fluidic network structure includes the at least one nanoscale capillary. A method of using and manufacturing the fluidic network structure is also described. | 03-12-2015 |