Patent application number | Description | Published |
20090028745 | RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS - Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands. | 01-29-2009 |
20090242852 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 10-01-2009 |
20090299084 | TELLURIUM PRECURSORS FOR FILM DEPOSITION - Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 12-03-2009 |
20090321733 | METAL HETEROCYCLIC COMPOUNDS FOR DEPOSITION OF THIN FILMS - Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 12-31-2009 |
20110206862 | Titanium Nitride Film Deposition by Vapor Deposition Using Cyclopentadienyl Alkylamino Titanium Precursors - Disclosed are cyclopentadienyl alkylamino titanium precursors selected from the group consisting of Ti(iPr | 08-25-2011 |
20110262660 | CHALCOGENIDE-CONTAINING PRECURSORS, METHODS OF MAKING, AND METHODS OF USING THE SAME FOR THIN FILM DEPOSITION - Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices. Also disclosed are methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chalcogenide-containing precursors to form chalcogenide-containing films. | 10-27-2011 |
20120021590 | Tellurium Precursors for Film Deposition - Methods and compositions for depositing a tellurium-containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium-containing precursor is provided and introduced into the reactor, which is maintained at a temperature ranging from approximately 20° C. to approximately 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 01-26-2012 |
20120070582 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 03-22-2012 |
20120175751 | DEPOSITION OF GROUP IV METAL-CONTAINING FILMS AT HIGH TEMPERATURE - Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films{nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing fvm depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD. | 07-12-2012 |
20120231611 | DIHALIDE GERMANIUM(II) PRECURSORS FOR GERMANIUM-CONTAINING FILM DEPOSITIONS - Disclosed are GeX | 09-13-2012 |
20120276292 | METHOD OF FORMING SILICON OXIDE CONTAINING FILMS - A method of forming a silicon oxide film, comprising the steps of:
| 11-01-2012 |
20120308739 | METHODS FOR DEPOSITION OF ALKALINE EARTH METAL FLUORIDE FILMS - Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF | 12-06-2012 |
20130040056 | HETEROLEPTIC IRIDIUM PRECURSORS TO BE USED FOR THE DEPOSITION OF IRIDIUM-CONTAINING FILMS - The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: | 02-14-2013 |
20130059078 | USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS - Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices. | 03-07-2013 |
20130252438 | METHOD FOR THE DEPOSITION OF A RUTHENIUM-CONTAINING FILM - The invention concerns the use of the ruthenium-containing precursor having the formula | 09-26-2013 |
20130267082 | CHALCOGENIDE-CONTAINING PRECURSORS, METHODS OF MAKING, AND METHODS OF USING THE SAME FOR THIN FILM DEPOSITION - Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT1 or fiat panel type devices. Also disclosed a methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chaicogenide-containing precursors to form chaicogenide-containing films. | 10-10-2013 |
20130295298 | TITANIUM-ALUMINUM ALLOY DEPOSITION WITH TITANIUM-TETRAHYDROALUMINATE BIMETALLIC MOLECULES - Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH | 11-07-2013 |
20140119977 | METAL HETEROCYCLIC COMPOUNDS FOR DEPOSITION OF THIN FILMS - Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least | 05-01-2014 |
20140242298 | NICKEL BIS DIAZABUTADIENE PRECURSORS, THEIR SYNTHESIS, AND THEIR USE FOR NICKEL CONTAINING FILMS DEPOSITIONS - Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD) | 08-28-2014 |
20150056384 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM USING ARENE DIAZADIENE RUTHENIUM(0) PRECURSORS - The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate. | 02-26-2015 |