Patent application number | Description | Published |
20080236747 | GAS ANALYZING APPARATUS AND SUBSTRATE PROCESSING SYSTEM - A gas analyzing apparatus includes a measurement chamber having a mounting member for mounting thereon a substrate on which a sample is adsorbed; a depressurizing mechanism for depressurizing the inside of the measurement chamber; and a heating unit for heating the substrate having the adsorbed sample thereon and mounted on the mounting member. The apparatus further includes: a mass spectrometer inserted in the measurement chamber, for detecting gas molecules escaping from the sample with an increasing temperature; and a temperature measuring unit for measuring a temperature of the substrate having the adsorbed sample thereon by using an interferometer which detects an optical thickness of the substrate. | 10-02-2008 |
20080304543 | TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD - A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object. | 12-11-2008 |
20090047795 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM - A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals. | 02-19-2009 |
20090194508 | SUBSTRATE PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency. | 08-06-2009 |
20100072172 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage. | 03-25-2010 |
20120224603 | TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD - A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object. | 09-06-2012 |
20130122714 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM - A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals. | 05-16-2013 |
20140286375 | TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD - A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object. | 09-25-2014 |