Patent application number | Description | Published |
20120219867 | MAGNESIUM SECONDARY BATTERY, USE OF ELECTROLYTIC SOLUTION IN MAGNESIUM SECONDARY BATTERY AND ELECTROLYTIC SOLUTION FOR MAGNETIC SECONDARY BATTERY - A magnesium secondary battery includes a positive electrode, a negative electrode, a separator membrane and an electrolytic solution. The electrolytic solution includes nitrogen-containing heterocyclic magnesium halide and an organic ether solvent. | 08-30-2012 |
20130316244 | ELECTRODE FOR LITHIUM ION BATTERIES AND THE METHOD FOR MANUFACTURING THE SAME - An electrode is formed of a ternary composite of silicon, carbon, and carbon filter foil, for lithium ion batteries. Also described is a method for manufacturing silicon/carbon/carbon fiber foil composite electrode for lithium batteries, including: mixing silicon and an organic substance capable of forming carbon after heat treatment, in a solvent, to form a slurry; immersing the carbon fiber foil in said slurry until the slurry coats on and penetrates into the carbon fiber foil; and heating the carbon fiber foil, which has been coated and penetrated with the slurry, in an inert gas atmosphere or all inert gas atmosphere mixed with a reductive gas at a temperature of at least 400° C. for at least 2 hours. | 11-28-2013 |
20140004422 | POSITIVE ELECTRODE ACTIVE MATERIAL FOR MAGNESIUM SECONDARY BATTERY, MAGNESIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL FOR MAGNESIUM SECONDARY BATTERY, AND METHOD FOR MANUFACTURING MAGNESIUM SECONDARY BATTERY | 01-02-2014 |
20140056050 | MEMORY CELL AND MEMORY - In various embodiments, a memory cell and a memory are provided. The memory cell comprises a Static Random Access Memory (SRAM) cell including a reset-set (RS) flip-flop and a Read Only Memory (ROM) cell being connected (or coupled) to the SRAM cell to set logic states of internal latch nodes of the RS flip-flop when the ROM cell is triggered. The size of the memory cells proposed in an embodiment of the invention is much smaller than the sum of the size of ROM cells and the size of SRAM cells with the capacity of the memory cells same as the sum of the capacity of the ROM cells and the capacity of the SRAM cells. | 02-27-2014 |
20140147751 | Silicon-carbon Composite Anode Material for Lithium Ion Batteries and A Preparation Method Thereof - Disclosed in the invention are a silicon-carbon composite anode material for lithium ion batteries and a preparation method thereof The material consists of a porous silicon substrate and a carbon coating layer. The preparation method of the material comprises preparing a porous silicon substrate and a carbon coating layer. The silicon-carbon composite anode material for lithium ion batteries has the advantages of high reversible capacity, good cycle performance and good rate performance. The material respectively shows reversible capacities of 1,556 mAh, 1,290 mAh, 877 mAh and 474 mAh/g at 0.2 C, 1 C, 4 C and 15 C rates; the specific capacity remains above 1,500 mAh after 40 cycles at the rate of 0.2 C and the reversible capacity retention rate is up to 90 percent. | 05-29-2014 |
20140147754 | MAGNESIUM BATTERY ELECTROLYTE - A magnesium battery electrolyte with a wide electrochemical window was developed. The electrolyte includes an organic boron magnesium salt and an aprotic polar solvent. The organic boron magnesium salt is an organic boron magnesium salt complex formed by compounding a Lewis acid with a boron center and a magnesium-containing Lewis base R′ | 05-29-2014 |
20140347916 | EIGHT TRANSISTOR (8T) WRITE ASSIST STATIC RANDOM ACCESS MEMORY (SRAM) CELL - Disclosed are devices, systems and/or methods relating to an eight transistor (8T) static random access memory (SRAM) cell, according to one or more embodiments. In one embodiment, an SRAM storage cell is disclosed comprising a word line, a write column select line, a cross-coupled data latch, and a first NMOS switch device serially coupled to a second NMOS switch device. In this embodiment, the gate node of the first NMOS switch device is coupled to the word line, a source node of the first NMOS switch device is coupled to the cross-coupled data latch, a gate node of the second NMOS switch device is coupled to the write column select line, and a source node of the second NMOS switch device is coupled to the cross-coupled data latch. | 11-27-2014 |
20150140451 | ELECTROLYTE FOR MAGNESIUM CELL AND MAGNESIUM CELL CONTAINING THE ELECTROLYTE - An electrolyte for a magnesium cell contains a solute, which is phenoxyl-Mg—Al-halogen complex, and an ether solvent. With respect to the entire electrolyte, the solute concentration is 0.2 to 1 mol/L. The electrolyte is capable of staying stable in the air. Also provided is a magnesium cell containing the electrolyte. | 05-21-2015 |