Patent application number | Description | Published |
20080214021 | METHOD OF CRYSTALLIZING SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - It is an object of the present invention to align the plane orientations of crystal grains of a semiconductor film crystallized by irradiation with a linear laser beam with a width of less than or equal to 5 μm. By performing irradiation with the linear laser beam condensed by an aspheric cylindrical lens or a gradient index lens to completely melt the semiconductor film and scanning the linear laser beam, the completely melted semiconductor film is made to grow laterally. Because the linear beam is very narrow, the width of the semiconductor which is in a liquid state is also narrow, so the occurrence of turbulent flow in the liquid semiconductor is suppressed. Therefore, growth directions of adjacent crystal grains do not become disordered due to turbulent flow and are unformalized, and thus the plane orientations of the laterally grown crystal grains can be aligned. | 09-04-2008 |
20090046757 | Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device - An object is to provide a laser irradiation apparatus and a laser irradiation method with which positions of crystal grain boundaries generated at the time of laser crystallization can be controlled. Laser light emitted from a laser | 02-19-2009 |
20090111244 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer. | 04-30-2009 |
20090115028 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized. | 05-07-2009 |
20090115029 | Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device - A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved | 05-07-2009 |
20090117692 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A single crystal semiconductor substrate bonded over a supporting substrate with a buffer layer interposed therebetween and having a separation layer is heated to separate the single crystal semiconductor substrate using the separation layer or a region near the separation layer as a separation plane, thereby forming a single crystal semiconductor layer over the supporting substrate. The single crystal semiconductor layer is irradiated with a laser beam to re-single-crystallize the single crystal semiconductor layer through melting. An impurity element is selectively added into the single crystal semiconductor layer to form a pair of impurity regions and a channel formation region between the pair of impurity regions. The single crystal semiconductor layer is heated at temperature which is equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate and which does not cause melting of the single crystal semiconductor layer. | 05-07-2009 |
20090117707 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing an SOI substrate provided with a single crystal semiconductor layer which can be used practically even when a substrate having a low heat resistant temperature, such as a glass substrate or the like, is used. Another object is to manufacture a highly reliable semiconductor device using such an SOI substrate. An SOI substrate having a single crystal semiconductor layer which is transferred from a single crystal semiconductor substrate to a supporting substrate, and an entire region of which is melted by laser light irradiation to cause re-single-crystallization is used. Accordingly, the single crystal semiconductor layer has reduced crystal defects, high crystallinity and high planarity. | 05-07-2009 |
20090117716 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided. | 05-07-2009 |
20090209059 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved. | 08-20-2009 |
20090239354 | METHOD FOR MANUFACTURING SOI SUBSTRATE - Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light. | 09-24-2009 |
20100029058 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere. | 02-04-2010 |
20100075470 | METHOD OF MANUFACTURING SOI SUBSTRATE - After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment. | 03-25-2010 |
20100081251 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor substrate is irradiated with accelerated ions to form an embrittled region in the single crystal semiconductor substrate. The single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween. The single crystal semiconductor substrate is separated at the embrittled region to form a semiconductor layer over the base substrate. Heat treatment is performed to reduce defects in the semiconductor layer. The semiconductor layer is then irradiated with laser light. | 04-01-2010 |
20100084734 | MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - To provide a semiconductor substrate in which a semiconductor element having favorable crystallinity and high performance can be formed. A single crystal semiconductor substrate having an embrittlement layer and a base substrate are bonded with an insulating layer interposed therebetween; the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment; a single crystal semiconductor layer is fixed to the base substrate; the single crystal semiconductor layer is irradiated with a laser beam; the single crystal semiconductor layer is in a partially melted state to be recrystallized; and crystal defects are repaired. In addition, the energy density of a laser beam with which the best crystallinity of the single crystal semiconductor layer is obtained is detected by a microwave photoconductivity decay method. | 04-08-2010 |
20100093153 | MANUFACTURING METHOD OF SOI SUBSTRATE - To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one. | 04-15-2010 |
20100151663 | MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - When the single crystal semiconductor layer is melted, the outward diffusion of oxygen is promoted. Specifically, an SOI substrate is formed in such a manner that an SOI structure having a bonding layer including oxygen provided over a base substrate and a single crystal semiconductor layer provided over the bonding layer including oxygen is formed, and part of the single crystal semiconductor layer is melted by irradiation with a laser beam in a state that the base substrate is heated at a temperature of higher than or equal to 500° C. and lower than a melting point of the base substrate. | 06-17-2010 |
20100291754 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved. | 11-18-2010 |
20110053384 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2. | 03-03-2011 |
20110073561 | METHOD FOR MANUFACTURING ELECTRODE FOR POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE - One of objects is to reduce the effect caused by the volume expansion of an active material. An embodiment is a method for manufacturing an electrode for a power storage device which includes an active material over one of surfaces of a current collector. The active material is formed by forming a conductive body functioning as the current collector; forming a mixed layer including an amorphous region and a microcrystalline region over one of surfaces of the conductive body; and etching the mixed layer selectively, so that a part of or the whole of the amorphous region is removed and the microcrystalline region is exposed. Thus, the effect caused by the volume expansion of the active material is reduced. | 03-31-2011 |
20110076561 | METHOD FOR MANUFACTURING ELECTRODE, AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE AND POWER GENERATION AND STORAGE DEVICE HAVING THE ELECTRODE - The characteristics of a power storage device are improved and the lifetime of the power storage device is prolonged. An electrode is manufactured through the following steps: a step of forming an electrode film; a step of forming a damage layer by ion doping on the electrode film; and a step of providing a damage region between the damage layer and a surface. Alkali ion insertion and extraction can be performed by dipping of an electrode, in which the damage layer and the damage region are formed, in a solution containing an alkali ion. A space in which the volume of the electrode is expanded can be secured by the formation of the damage layer and the damage region. Note that another lithium may be used instead of an alkali metal. | 03-31-2011 |
20110212596 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere. | 09-01-2011 |
20110287605 | METHOD FOR MANUFACTURING SOI SUBSTRATE - Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light. | 11-24-2011 |
20110318864 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved. | 12-29-2011 |
20120002348 | ELECTRIC DOUBLE LAYER CAPACITOR, LITHIUM ION CAPACITOR AND MANUFACTURING METHOD THEREOF - A thin energy storage device having high capacity is obtained. An energy storage device having high output is obtained. A current collector and an active material layer are formed in the same manufacturing step. The number of manufacturing steps of an energy storage device is reduced. The manufacturing cost of an energy storage device is suppressed. One embodiment of the present invention relates to an electric double layer capacitor which includes a pair of electrodes including a porous metal material, and an electrolyte provided between the pair of electrodes; or a lithium ion capacitor which includes a positive electrode that is a porous metal body functioning as a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte provided between the positive electrode and the negative electrode. | 01-05-2012 |
20120032170 | Electric Double-Layer Capacitor and Solar Power Generation Device - The present invention relates to a solar power generation device which includes an electric double-layer capacitor and a solar cell. The electric double-layer capacitor includes a pair of current collectors formed using a light-transmitting conductive material; active materials which are dispersed on the pair of current collectors; a light-transmitting electrolyte layer which is provided between the pair of current collectors; and a terminal portion which is electrically connected to the current collector. The solar cell includes, over a light-transmitting substrate, a first light-transmitting conductive film; a photoelectric conversion layer which is provided in contact with the first light-transmitting conductive film; and a second light-transmitting conductive film which is provided in contact with the photoelectric conversion layer. The electric double-layer capacitor and the solar cell are electrically connected to each other through the terminal portion, the first light-transmitting conductive film, and the second light-transmitting conductive film. | 02-09-2012 |
20120073984 | METHOD FOR RECOVERING METALLIC LITHIUM - An object is to recover metallic lithium from metallic lithium on which an unnecessary substance is formed without discarding the metallic lithium on which an unnecessary substance is formed. The present invention relates to a method for recovering metallic lithium in such a manner that metallic lithium on which a substance is formed is reacted with nitrogen to form lithium nitride; the lithium nitride is reacted with carbon dioxide to form lithium carbonate; the lithium carbonate is reacted with hydrochloric acid to form lithium chloride; the lithium chloride and potassium chloride are melted; and electrolysis is applied to the melted lithium chloride and potassium chloride. | 03-29-2012 |
20120126231 | Electric Double Layer Capacitor, Lithium Ion Capacitor, and Charging Device - An electric double layer capacitor, a lithium ion capacitor, and a charging device including a solar cell and either of the capacitors are disclosed. The electric double layer capacitor includes a first and second light-transmitting substrates; a pair of current collectors provided perpendicular to the substrates; active material layers provided on facing planes of the current collectors; and an electrolyte in a region surrounded by the substrates and the facing active material layers. The lithium ion capacitor includes a first and second light-transmitting substrates; a positive and negative electrode active material layers provided perpendicular to the substrates; and an electrolyte in a region surrounded by the facing substrates and the positive and negative electrode active material layers. | 05-24-2012 |
20120237822 | LITHIUM ION SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME - A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO | 09-20-2012 |
20120308891 | METHOD OF MANUFACTURING ELECTRODE - To increase the conductivity and electric capacity of an electrode which includes active material particles and the like and is used in a battery, a graphene net including 1 to 100 graphene sheets is used instead of a conventionally used conduction auxiliary agent add binder. The graphene net which has a two-dimensional expansion and a three-dimensional structure is more likely to touch active material particles or another conduction auxiliary agent, thereby increasing the conductivity and the bonding strength between active material particles. This graphene net is obtained by mixing graphene oxide and active material particles and then heating the mixture in a vacuum or a reducing atmosphere. | 12-06-2012 |
20120308894 | POWER STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A negative electrode and a power storage device are provided, which have one of an alloy-based particle and an alloy-based whisker and a carbon film including 1 to 50 graphene layers. A surface of the alloy-based particle or the alloy-based whisker is covered with the carbon film. In addition, a method of manufacturing a negative electrode and a method of manufacturing a power storage device are provided, which have the step of mixing an alloy-based particle or an alloy-based whisker with graphene oxide, and the step of heating the mixture in a vacuum or in a reducing atmosphere. | 12-06-2012 |
20130047422 | MANUFACTURING METHOD OF COMPOSITE OXIDE AND MANUFACTURING METHOD OF POWER STORAGE DEVICE - An object is to reduce variation in shape of crystals that are to be manufactured. Raw materials are each weighed, solutions containing the respective raw materials are formed in an environment where an oxygen concentration is lower than that in air, the solutions containing the respective raw materials are mixed in an environment where an oxygen concentration is lower than that in air to form a mixture solution, and with use of the mixture solution, a composite oxide is formed by a hydrothermal method. | 02-28-2013 |
20130052522 | CARBON-BASED NEGATIVE ELECTRODE MATERIAL AND SECONDARY BATTERY INCLUDING NEGATIVE ELECTRODE MATERIAL - To provide a carbon-based negative electrode material which can be used with an electrolyte containing PC as a main ingredient, a carbon-based negative electrode material having a graphene layer structure is crystalline and has pores. That is, the crystal structure of the carbon-based negative electrode material is distorted more significantly than that of graphite. Accordingly, the carbon-based negative electrode material has a larger interlayer distance between graphenes than graphite. It has been shown that such a negative electrode material can be used for a secondary battery which contains an electrolyte containing PC as a main ingredient. | 02-28-2013 |
20130065120 | POSITIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY, MANUFACTURING METHOD THEREOF, AND LITHIUM SECONDARY BATTERY - Occlusion and release of lithium ion are likely to one-dimensionally occur in the b-axis direction of a crystal in a lithium-containing composite oxide having an olivine structure. Thus, a positive electrode in which the b-axes of lithium-containing composite oxide single crystals are oriented vertically to a surface of a positive electrode current collector is provided. The lithium-containing composite oxide particles are mixed with graphene oxide and then pressure is applied thereto, whereby the rectangular parallelepiped or substantially rectangular parallelepiped particles are likely to slip. In addition, in the case where the rectangular parallelepiped or substantially rectangular parallelepiped particles whose length in the b-axis direction is shorter than those in the a-axis direction and the c-axis direction are used, when pressure is applied in one direction, the b-axes can be oriented in the one direction. | 03-14-2013 |
20130134051 | FLEXIBLE SUBSTRATE PROCESSING APPARATUS - To provide a flexible substrate processing apparatus which allows the stable reduction of an oxide contained in a film-like structure body formed on a flexible substrate. The apparatus has a substrate carrying-out portion where a flexible substrate on which a film-like structure body is formed is unwound; a reduction treatment portion where an oxide contained in the film-like structure body formed on the flexible substrate is electrochemically reduced; a washing portion where the flexible substrate and the film-like structure body are washed; a drying portion where the flexible substrate and the film-like structure body are dried; and a substrate carrying-in portion where the flexible substrate on which the film-like structure body is formed is taken up. | 05-30-2013 |
20130162197 | METHOD FOR CHARGING LITHIUM ION SECONDARY BATTERY AND BATTERY CHARGER - A lithium ion secondary battery includes a positive electrode including a positive electrode active material layer containing lithium iron phosphate, a negative electrode including a negative electrode active material layer containing graphite, and an electrolyte including a lithium salt and a solvent including ethylene carbonate and diethyl carbonate between the positive electrode and the negative electrode. When the battery temperature of the lithium ion secondary battery or the temperature of an environment in which the lithium ion secondary battery is used is T and given temperatures are T | 06-27-2013 |
20130164609 | NONAQUEOUS SOLVENT, NONAQUEOUS ELECTROLYTE, AND POWER STORAGE DEVICE - A power storage device using an organic solvent as a nonaqueous solvent for a nonaqueous electrolyte, in which a CV charging period in CCCV charging can be prevented from being extended and which has high performance, can be provided. The power storage device includes a positive electrode, a negative electrode, and a nonaqueous electrolyte. The nonaqueous electrolyte includes an ionic liquid including an alicyclic quaternary ammonium cation having one or more substituents and a counter anion to the alicyclic quaternary ammonium cation, a cyclic ester, and an alkali metal salt. In particular, in the power storage device, the ionic liquid content is greater than or equal to 70 wt % and less than 100 wt % per unit weight of the ionic liquid and the cyclic ester in the nonaqueous electrolyte, or greater than or equal to 50 wt % and less than 80 wt % per unit weight of the nonaqueous electrolyte. | 06-27-2013 |
20130164611 | POWER STORAGE DEVICE - Disclosed is a power storage device including a negative electrode and a positive electrode. The negative electrode includes a negative electrode current collector including a common portion and a plurality of protrusions protruding from the common portion, and a negative electrode active material layer which covers a side surface of the protrusion. The positive electrode faces the negative electrode with an electrolyte provided therebetween. In the plurality of protrusions, a distance between adjacent protrusions is a distance with which adjacent negative electrode active material layers are in contact with each other before the capacity of the negative electrode active material layer reaches the theoretical capacity of the negative electrode active material layer by insertion of carrier ions from the positive electrode. | 06-27-2013 |
20130224562 | POWER STORAGE DEVICE - To provide a sheet-like power storage device which can be curved or bent in at least one axis direction. A power storage device includes a power storage element including a plurality of flexible sheet-like positive electrodes each having one end portion fixed to a positive electrode tab; a plurality of flexible sheet-like negative electrodes each having one end portion fixed to a negative electrode tab; and a plurality of flexible sheet-like separators. The positive electrodes and the negative electrodes are alternately stacked so as to overlap with each other with the separator interposed therebetween. The power storage element is sealed in a flexible exterior body. | 08-29-2013 |
20130249054 | POWER STORAGE ELEMENT, MANUFACTURING METHOD THEREOF, AND POWER STORAGE DEVICE - Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane. The power storage element further includes a positive electrode active material layer over the positive electrode current collector layer and a negative electrode active material layer over the negative electrode current collector layer. An electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer is provided. The electrolyte layer may be a solid electrolyte layer. | 09-26-2013 |
20130266858 | NEGATIVE ELECTRODE FOR POWER STORAGE DEVICE, METHOD FOR FORMING THE SAME, AND POWER STORAGE DEVICE - An object is to suppress electrochemical decomposition of an electrolyte solution and the like at a negative electrode in a lithium ion battery or a lithium ion capacitor; thus, irreversible capacity is reduced, cycle performance is improved, or operating temperature range is extended. A negative electrode for a power storage device including a negative electrode current collector, a negative electrode active material layer which is over the negative electrode current collector and includes a plurality of particles of a negative electrode active material, and a film covering part of the negative electrode active material. The film has an insulating property and lithium ion conductivity. | 10-10-2013 |
20140004393 | POWER STORAGE UNIT AND SOLAR POWER GENERATION UNIT | 01-02-2014 |
20140023920 | SECONDARY BATTERY - A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode. | 01-23-2014 |
20140099554 | MATERIAL FOR ELECTRODE OF POWER STORAGE DEVICE, POWER STORAGE DEVICE, AND ELECTRICAL APPLIANCE - To improve the reliability of a power storage device. A granular active material including carbon is used, and a net-like structure is formed on part of a surface of the granular active material. In the net-like structure, a carbon atom included in the granular active material is bonded to a silicon atom or a metal atom through an oxygen atom. Formation of the net-like structure suppresses reductive decomposition of an electrolyte solution, leading to a reduction in irreversible capacity. A power storage device using the above active material has high cycle performance and high reliability. | 04-10-2014 |
20140127567 | ELECTRODE FOR POWER STORAGE DEVICE, POWER STORAGE DEVICE, AND MANUFACTURING METHOD OF ELECTRODE FOR POWER STORAGE DEVICE - To improve the long-term cycle performance of a lithium-ion battery or a lithium-ion capacitor by minimizing the decomposition reaction of an electrolytic solution and the like as a side reaction of charge and discharge in the repeated charge and discharge cycles of the lithium-ion battery or the lithium-ion capacitor. A current collector and an active material layer over the current collector are included in an electrode for a power storage device. The active material layer includes a plurality of active material particles and silicon oxide. The surface of one of the active material particles has a region that is in contact with one of the other active material particles. The surface of the active material particle except the region is partly or entirely covered with the silicon oxide. | 05-08-2014 |
20140176076 | POWER STORAGE DEVICE AND METHOD FOR CHARGING THE SAME - A decrease in the capacity of a power storage device is inhibited by adjusting or reducing imbalance in the amount of inserted and extracted carrier ions between positive and negative electrodes, which is caused by decomposition of an electrolyte solution of the negative electrode. Further, the capacity of the power storage device can be restored. Furthermore, impurities in the electrolyte solution can be decomposed with the use of the third electrode. A power storage device including positive and negative electrodes, an electrolyte, and a third electrode is provided. The third electrode has an adequate electrostatic capacitance. The third electrode can include a material with a large surface area. In addition, a method for charging the power storage device including the steps of performing charging by applying a current between the positive and negative electrodes, and performing additional applying a current between the third electrode and the negative electrode is provided. | 06-26-2014 |
20140184162 | POWER STORAGE DEVICE CONTROL SYSTEM, POWER STORAGE SYSTEM, AND ELECTRICAL APPLIANCE - Deterioration of a power storage device is reduced. Switches that control the connections of a plurality of power storage devices separately are provided. The switches are controlled with a plurality of control signals, so as to switch between charge and discharge of each of the power storage devices or between serial connection and parallel connection of the plurality of power storage devices. Further, a semiconductor circuit having a function of carrying out arithmetic is provided for the power storage devices, so that a control system of the power storage devices or a power storage system is constructed. | 07-03-2014 |
20140184165 | POWER STORAGE DEVICE AND POWER STORAGE SYSTEM - To provide a power storage device, an operation condition of which is easily analyzed. A secondary battery includes a sensor that is a measurement unit, a microcontroller unit that is a determination unit, and a memory that is a memory unit. With the sensor, conditions of the secondary battery such as the remaining battery power, the voltage, the current, and the temperature are measured. The microcontroller unit performs arithmetic processing of the measurement results and determines the operation condition of the secondary battery. Further, the microcontroller unit stores the measurement result in the memory in accordance with the operation condition of the secondary battery. | 07-03-2014 |
20140184172 | POWER STORAGE DEVICE AND CHARGING METHOD THEREOF - An object is to inhibit a decrease in the capacity of a power storage device or to compensate the capacity, by adjusting or rectifying an imbalance between a positive electrode and a negative electrode, which is caused by decomposition of an electrolyte solution at the negative electrode. Provided is a charging method of a power storage device including a positive electrode using an active material that exhibits two-phase reaction, a negative electrode, and an electrolyte solution. The method includes the steps of, after constant current charging, performing constant voltage charging with a voltage that does not cause decomposition of the electrolyte solution until a charging current becomes lower than or equal to a lower current value limit; and after the constant voltage charging, performing additional charging with a voltage that causes decomposition of the electrolyte solution until a resistance of the power storage device reaches a predetermined resistance. | 07-03-2014 |
20140186663 | POWER STORAGE DEVICE - To provide a highly reliable power storage device, to improve the security of a power storage device, and to suppress deterioration of a power storage device, a power storage device includes, inside an exterior material, a positive electrode, a negative electrode facing the positive electrode, an electrolyte solution between the positive electrode and the negative electrode, and an adsorbent. A separation body which is impermeable to the electrolyte solution and permeable to a gas is provided between the electrolyte solution and the adsorbent. | 07-03-2014 |
20140230208 | ELECTRIC DOUBLE LAYER CAPACITOR, LITHIUM ION CAPACITOR AND MANUFACTURING METHOD THEREOF - A thin energy storage device having high capacity is obtained. An energy storage device having high output is obtained. A current collector and an active material layer are formed in the same manufacturing step. The number of manufacturing steps of an energy storage device is reduced. The manufacturing cost of an energy storage device is suppressed. One embodiment of the present invention relates to an electric double layer capacitor which includes a pair of electrodes including a porous metal material, and an electrolyte provided between the pair of electrodes; or a lithium ion capacitor which includes a positive electrode that is a porous metal body functioning as a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte provided between the positive electrode and the negative electrode. | 08-21-2014 |
20140370379 | SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF - To increase the capacity and energy density of a secondary battery by using a novel material as a material for a negative electrode in order to increase the amount of lithium ions transferred in charge and discharge. In the case where the negative electrode includes a current collector and a negative electrode active material layer, gallium is used as the negative electrode active material, and the negative electrode active material layer contains resin at 2 wt % or more, preferably 10 wt % or more, adhesion between the current collector and the negative electrode active material can be increased. This inhibits separation between the current collector and the negative electrode active material due repeated expansion and contraction, resulting in longer lifetime of the secondary battery. | 12-18-2014 |
20150086868 | SECONDARY BATTERY - An object of one embodiment of the present invention is to provide a secondary battery in which deterioration of charge-discharge cycle characteristics is suppressed, to suppress generation of defects caused by expansion and contraction of an active material in a negative electrode, or to prevent deterioration caused by deformation of a secondary battery. To prevent deterioration, a material that can be alloyed with lithium and fluidified easily is used for a negative electrode. To hold a negative electrode active material over a surface of a current collector, a covering layer that covers the negative electrode active material is provided. Furthermore, a portion where the current collector and the negative electrode active material are in contact with each other is alloyed. In other words, an alloy that is in contact with both the current collector and the negative electrode active material is provided in the negative electrode. | 03-26-2015 |