Kamisuki
Shinichi Kamisuki, Shiojiri JP
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20130269434 | PHYSICAL QUANTITY SENSOR AND ELECTRONIC APPARATUS - A physical quantity sensor includes: a first substrate including a first fixed electrode portion disposed on a first base surface and a first through-hole penetrating the front and rear of the substrate; a second substrate including a second fixed electrode portion disposed on a second base surface and a second through-hole penetrating the front and rear of the substrate, the second base surface being arranged to face the first base surface; and a movable body arranged between the first substrate and the second substrate with gaps and including a movable electrode portion facing the first fixed electrode portion and the second fixed electrode portion. In the first through-hole, a first through-electrode electrically connected with the first fixed electrode portion is disposed. In the second through-hole, a second through-electrode electrically connected with the second fixed electrode portion is disposed. | 10-17-2013 |
Shinji Kamisuki, Kyoto JP
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20090131475 | COMPOSITIONS AND METHODS FOR THE TREATMENT OF METABOLIC DISORDERS - The present invention relates to treatment and/or prevention of one or more metabolic disorders utilizing fatostatin A and/or a derivative and/or analog thereof. In other aspects, the compound for treatment and/or prevention of one or more metabolic disorders utilizes an A-B—C tripartite structure, wherein A, B, and C are identical or non-identical structures and are described in detail herein. In specific aspects, the metabolic disorder includes obesity or diabetes, for example. | 05-21-2009 |
Shinji Kamisuki, Chiba JP
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20130005768 | COMPOSITIONS AND METHODS FOR THE TREATMENT OF METABOLIC DISORDERS - The present invention relates to treatment and/or prevention of one or more metabolic disorders utilizing fatostatin A and/or a derivative and/or analog thereof. In other aspects, the compound for treatment and/or prevention of one or more metabolic disorders utilizes an A-B-C tripartite structure, wherein A, B, and C are identical or non-identical structures and are described in detail herein. In specific aspects, the metabolic disorder includes obesity or diabetes, for example. | 01-03-2013 |
20130012538 | COMPOSITIONS AND METHODS FOR THE TREATMENT OF METABOLIC DISORDERS - The present invention relates to treatment and/or prevention of one or more metabolic disorders utilizing fatostatin A and/or a derivative and/or analog thereof. In other aspects, the compound for treatment and/or prevention of one or more metabolic disorders utilizes an A-B-C tripartite structure, wherein A, B, and C are identical or non-identical structures and are described in detail herein. In specific aspects, the metabolic disorder includes obesity or diabetes, for example. | 01-10-2013 |
Tatsuo Kamisuki, Kanagawa JP
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20140017162 | SULFUR RECOVERY UNIT AND SULFUR RECOVERY METHOD - A sulfur recovery unit comprising: a reaction furnace configured to carry out a high-temperature Claus reaction between hydrogen-sulfide-containing gas and oxygen-containing gas introduced to the reaction furnace; a sulfur condenser configured to cool reaction gas discharged from the reaction furnace and condense sulfur contained in the reaction gas; and a pipe that connects the reaction furnace to the sulfur condenser, wherein the reaction furnace is fixed to the ground; and the sulfur condenser and the pipe are arranged so as to be able to move relative to the reaction furnace. | 01-16-2014 |
Yoichi Kamisuki, Tokyo JP
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20120041714 | SEMICONDUCTOR HEAT TREATMENT MEMBER HAVING SIC FILM - A semiconductor heat treatment member having a CVD-SiC film, which can reduce the frequency of cleaning steps and significantly improves the throughput of wafer process, is provided. | 02-16-2012 |
20120196038 | JIG FOR SEMICONDUCTOR PRODUCTION AND METHOD FOR PRODUCING SAME - The present invention relates to: a jig for semiconductor production which is used for a CVD device in a semiconductor production process and contains a jig base and an SiC coating film formed on the jig base, in which the SiC coating film has a surface area ratio (surface area S | 08-02-2012 |
Yoshiharu Kamisuki, Yokohama-Shi JP
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20130238211 | VEHICLE DRIVING ASSIST SYSTEM - A vehicle driving assist system is provided that calculates a risk potential indicative of a degree of convergence between the host vehicle and the preceding obstacle. A first driving assistance control system controls at least one of an actuation reaction force exerted by a driver-operated driving operation device and a braking/driving force exerted against the host vehicle based on the risk potential calculated. A second driving assistance control system controls the braking/driving force of the host vehicle such that a headway distance is maintained between the host vehicle and the obstacle. A transition detecting section detects a transition of operating states of the first and second driving assistance control systems. The control adjusting section adjusts the control executed by the first and second driving assistance control systems when a transition of operating state is detected. | 09-12-2013 |