Kenichi Fujii
Kenichi Fujii, Katsushika-Ku JP
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20100182956 | COMMUNICATION APPARATUS, COMMUNICATION SYSTEM, AND METHOD FOR SETTING COMMUNICATION PARAMETERS OF THE COMMUNICATION APPARATUS - A device capability attribute regarding a setting on communication parameters, and provision attribute information indicative of whether or not a communication terminal is in a state that it can provide communication parameters to another communication terminal are stored in advance. The communication terminal, where the device capability attribute has at least a provision capability of the communication parameters, is selected as a provision device. In a case where there are plural communication terminals where the device capability attribute has a communication parameter provision capability, a communication terminal where the device capability attribute has the communication parameter provision capability only is preferentially selected. In a case where the device capability attributes of respective communication terminals are equal, a communication terminal storing the provision attribute information indicative of the state that it can provide the communication parameters is selected as a provision device. | 07-22-2010 |
20110143789 | WIRELESS COMMUNICATION SYSTEM, AND WIRELESS COMMUNICATION DEVICE AND CONTROL METHOD - This invention has as its object to set a one-to-one relationship upon establishing a wireless communication channel between a wireless communication device on the information transmitting side and a wireless communication device that receives and processes the information even in an environment including a plurality of wireless communication devices, and to assure simple user's operations at least until the communication channel is established. To this end, when the user inputs a wireless communication channel establishment instruction to both a digital camera and printer having wireless communication functions, these devices execute wireless communication establishment processes within an allowable time period which is specified by a time set in a timer and a retry count. When the devices can seize each other within that time period, the communication channel is established. After that, the digital camera sends a sensed image to the printer, which prints the sensed image. | 06-16-2011 |
20130301081 | COMMUNICATION APPARATUS, COMMUNICATION SYSTEM, AND METHOD FOR SETTING COMMUNICATION PARAMETERS OF THE COMMUNICATION APPARATUS - A device capability attribute regarding a setting on communication parameters, and provision attribute information indicative of whether or not a communication terminal is in a state that it can provide communication parameters to another communication terminal are stored in advance. The communication terminal, where the device capability attribute has at least a provision capability of the communication parameters, is selected as a provision device. In a case where there are plural communication terminals where the device capability attribute has a communication parameter provision capability, a communication terminal where the device capability attribute has the communication parameter provision capability only is preferentially selected. In a case where the device capability attributes of respective communication terminals are equal, a communication terminal storing the provision attribute information indicative of the state that it can provide the communication parameters is selected as a provision device. | 11-14-2013 |
Kenichi Fujii, Aizuwakamatsu-Shi JP
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20110183510 | SEMICONDUCTOR DEVICE HAVING LAMINATED ELECTRONIC CONDUCTOR ON BIT LINE - There are provided a semiconductor device and a fabrication method therefor including an ONO film ( | 07-28-2011 |
Kenichi Fujii, Mie-Ken JP
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20110215473 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a first contact, a second contact, and an intermediate interconnection. The first contact is made of a first conductive material. The second contact is made of a second conductive material. A lower end portion of the second contact is connected to an upper end portion of the first contact. The intermediate interconnection is made of a third conductive material and isolated from the first contact and the second contact. A lower face of the intermediate interconnection is positioned higher than a lower face of the first contact. An upper face of the intermediate interconnection is positioned lower than an upper face of the second contact. A diffusion coefficient of the first conductive material with respect to the second conductive material is lower than a diffusion coefficient of the third conductive material with respect to the second conductive material. | 09-08-2011 |
Kenichi Fujii, Ichikawa JP
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20120090286 | FILTER ELEMENT - A cylindrical pleated filter part is made from spunbond whose section is approximately star-shaped. Cylindrical soft joining materials are installed at an upper end portion and at a lower end portion of the pleated filter part respectively, and soft connecting materials intervene between the cylindrical soft joining materials and the cylindrical pleated filter part, respectively, in order to be able to remove the cylindrical pleated filter part of the filter element and dispose of it. Therefore, it becomes possible to install the filter element even if standard structures or sizes of various installation portions of bag filters or the like are different in some measure. A retainer part can be separated from the pleated filter part and reused, so disposal volume can be largely decreased and disposal costs can be decreased. | 04-19-2012 |
Kenichi Fujii, Yokkaichi JP
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20140197473 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor storage device includes a substrate; an isolation film extending in a first direction and dividing the substrate into element regions; a cell string including memory cells in the element regions; a cell unit including the cell string and a select transistor on first directional ends of the cell string; diffusion layers formed in a portion of the element region first directionally beside the select gate electrode, the diffusion layers being adjacent to one another in a second direction intersecting with the first direction; and contacts extending through an interlayer insulating film and contacting the diffusion layers. An upper surface of the isolation film located between the diffusion layers is lower than an upper surface of the substrate. A laminate of silicon oxide film and a silicon nitride film are located above the upper surface of the isolation film and below the upper surface of the substrate. | 07-17-2014 |
Kenichi Fujii, Suntou-Gun JP
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20140168677 | IMAGE FORMING APPARATUS THAT CONTROLS IMAGE FORMATION CONDITION - An image forming apparatus includes: a receiving unit configured to receive reflection light emitted by a light emitting unit, and output a detection signal corresponding to an amount of received reflection light; a detection unit configured to output, as an output signal, a signal corresponding to a difference between a value that corresponds to an amount of reflection light from a first position at which a detection image having one or more lines in a direction different from a movement direction is formed and a value that corresponds to an amount of reflection light from a second position different from the first position; and a control unit configured to control an image formation condition related to density of an image to be formed, based on a peak value of the output signal. | 06-19-2014 |
Kenichi Fujii, Yokkaichi Mie JP
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20150263139 | SEMICONDUCTOR DEVICE - A semiconductor device includes a memory cell transistor in which a first insulation film, a first conductive layer, a second insulation film, and a second conductive layer are sequentially stacked on a semiconductor substrate, and a peripheral circuit element in which a third insulation film, a third conductive layer, a fourth insulation film, a fourth conductive layer are sequentially stacked on the semiconductor substrate and which has a contact electrically connected to the third conductive layer. In the semiconductor substrate, a recess is formed at least in a region immediately below the contact. The third conductive layer is also formed within the recess, and a film thickness of the third conductive layer in the recess is thicker than a film thickness of the first conductive layer. | 09-17-2015 |