Patent application number | Description | Published |
20080223446 | METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE AND CONDUCTIVE COMPOSITIONS USED THEREIN - The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. | 09-18-2008 |
20090044858 | Method of Manufacture of Semiconductor Device and Conductive Compositions Used Therein - The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. | 02-19-2009 |
20090101199 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (c) fluorine-containing glass frit; dispersed in (d) organic vehicle and devices made therefrom. | 04-23-2009 |
20090101210 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: MULTIPLE BUSBARS - Described herein are a silicon semiconductor device with multiple busbars, and a conductive silver paste for use in the front side of a solar cell device. | 04-23-2009 |
20090101872 | LEAD-FREE CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: Mg-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive lead-free silver paste for use in the front side of a solar cell device. | 04-23-2009 |
20090104456 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - Embodiments of the invention relate to a silicon semiconductor device, and a conductive silver paste for use in the front side of a solar cell device. | 04-23-2009 |
20090104457 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: FLUX MATERIALS - Described herein are a silicon semiconductor device and a conductive paste, including a flux material, for use in the front side of a solar cell device. | 04-23-2009 |
20090104461 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: Mg-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device. | 04-23-2009 |
20090107544 | LEAD-FREE CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: FLUX MATERIALS - Embodiments of the invention relate to a silicon semiconductor device, and a conductive silver paste for use in the front side of a solar cell device. | 04-30-2009 |
20090110939 | LEAD FREE LTCC TAPE COMPOSITION - A glass composition consisting essentially of, based on mole percent, 46-56% B | 04-30-2009 |
20090140217 | ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM - The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode. | 06-04-2009 |
20090261306 | NON-LEAD RESISTOR COMPOSITION - A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li | 10-22-2009 |
20090261307 | Resistor Compositions using a Cu-containing Glass Frit - This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit. | 10-22-2009 |
20090261941 | SURFACE-MODIFIED RUTHENIUM OXIDE CONDUCTIVE MATERIAL, LEAD-FREE GLASS(ES), THICK FILM RESISTOR PASTE(S), AND DEVICES MADE THEREFROM - The invention relates to a surface-modified RuO | 10-22-2009 |
20100040531 | NON-LEAD RESISTOR COMPOSITION - A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li | 02-18-2010 |
20100243048 | METAL PASTES AND USE THEREOF IN THE PRODUCTION OF SILICON SOLAR CELLS - Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-free glass frit with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO | 09-30-2010 |
20100258166 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 10-14-2010 |
20100258184 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 10-14-2010 |
20100275997 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: MG-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device. | 11-04-2010 |
20100294359 | PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER - A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps:
| 11-25-2010 |
20100294361 | PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER - A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: | 11-25-2010 |
20110006268 | ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM - The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode. | 01-13-2011 |
20110006271 | DIELECTRIC COMPOSITION WITH REDUCED RESISTANCE - This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission. | 01-13-2011 |
20110088769 | PROCESS OF FORMING AN ELECTRODE ON THE FRONT-SIDE OF A NON-TEXTURED SILICON WAFER - A process for the production of a front-side electrode on a non-textured silicon wafer having an ARC layer on its front-side, wherein the front-side electrode is printed from a silver paste and fired, wherein the silver paste comprises (i) an inorganic content comprising (a) 93 to 95 wt.-% of electrically conductive metal powder comprising 90 to 100 wt.-% of silver powder, (b) 1 to 7 wt.-% of at least one glass frit, (c) 0 to 6 wt.-% of at least one solid inorganic oxide and (d) 0 to 6 wt.-% of at least one compound capable of forming a solid inorganic oxide on firing and (ii) an organic vehicle, wherein the weight ratio between the electrically conductive metal powder and the glass frit plus solid inorganic oxide is >13 to 19 in the fired state. | 04-21-2011 |
20110089381 | LEAD-FREE RESISTIVE COMPOSITION - A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO | 04-21-2011 |
20110120535 | ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS - An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO | 05-26-2011 |
20110120551 | PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL - A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps:
| 05-26-2011 |
20110139238 | PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL - A process for the production of a MWT silicon solar cell comprising the steps:
| 06-16-2011 |
20110146776 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 06-23-2011 |
20110146781 | PROCESS OF FORMING A GRID CATHODE ON THE FRONT-SIDE OF A SILICON WAFER - A process for the production of a grid cathode on the front-side of a silicon wafer by applying and firing a metal paste on the silicon wafer in a front-side grid electrode pattern to form a seed grid cathode and subsequently subjecting the silicon wafer to a LIP process, wherein the metal paste comprises an organic vehicle and an inorganic content comprising (a) 90 to 98 wt.-% of at least one electrically conductive metal powder selected from the group consisting of nickel, copper and silver, and (b) 0.25 to 8 wt.-% of at least one glass frit selected from the group consisting of glass frits containing 47.5 to 64.3 wt.-% of PbO, 23.8 to 32.2 wt.-% of SiO | 06-23-2011 |
20110147677 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 06-23-2011 |
20110155240 | METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE AND CONDUCTIVE COMPOSITIONS USED THEREIN - The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. | 06-30-2011 |
20110192456 | PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL - A process for the production of a MWT silicon solar cell comprising the steps: | 08-11-2011 |
20110203659 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode. Additionally, the present invention is directed to a semiconductor device formed by the method detailed above and a semiconductor device formed from the thick film conductive composition detailed above. | 08-25-2011 |
20110232746 | THICK-FILM PASTES CONTAINING LEAD-TELLURIUM-BORON-OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a lead-tellurium-boron-oxide dispersed in an organic medium. | 09-29-2011 |
20110240124 | METAL PASTES AND USE THEREOF IN THE PRODUCTION OF SILICON SOLAR CELLS - Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-containing glass frit with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO | 10-06-2011 |
20110308595 | THICK-FILM PASTES CONTAINING LEAD- AND TELLURIUM-OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium. | 12-22-2011 |
20110308596 | THICK-FILM PASTES CONTAINING LEAD-TELLURIUM-LITHIUM-TITANIUM-OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-titanium-oxide dispersed in an organic medium. | 12-22-2011 |
20110308597 | THICK-FILM PASTES CONTAINING LEAD-TELLURIUM-LITHIUM- OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium. | 12-22-2011 |
20110315210 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 12-29-2011 |
20130112250 | PROCESS OF FORMING AN ALUMINUM P-DOPED SURFACE REGION OF A SEMICONDUCTOR SUBSTRATE - A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: | 05-09-2013 |
20130186463 | CONDUCTIVE SILVER PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL - A conductive silver via paste comprising particulate conductive silver, a lead-tellurium-lithium-titanium-oxide, titanium resinate and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste. | 07-25-2013 |