Patent application number | Description | Published |
20100311246 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A problem of a resist mask collapse due to a plasma process is solved. In a method of manufacturing a semiconductor device including steps of a plasma process to a sample having a mask made of an organic material, the plasma process includes a first step of a plasma process under a gas containing any of fluorine, oxygen, or nitrogen, or containing all of them, and a second step of the plasma process under a gas containing a rare gas without containing any of fluorine, oxygen, and nitrogen, and the first step and the second step are repeated. | 12-09-2010 |
20110253672 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - The present invention is intended to improve the uniformity in a distribution function of incident ion energy inside a wafer surface, and realize uniform plasma processing (etching or the like) inside the wafer surface. In a plasma processing apparatus, a bias application portion of a placement electrode on which a wafer is placed is divided into an inner electrode and an outer electrode at positions near the center of the wafer and the edge thereof. Each of a first bias power and a second bias power to be used to accelerate ions incident on the wafer is bifurcated, and the resultant bias powers are fed to the inner electrode and outer electrode using a power distributor by adjusting the power ratio. | 10-20-2011 |
20130087285 | PLASMA ETCHING APPARATUS - A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample. | 04-11-2013 |
20140175534 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a process of dividing gates of multi-layered films in fabricating a NAND flash memory having a three-dimensional structure, a pattern is prevented from deforming and falling. A ratio of a length L to a height h of control gate groups configuring a memory cell of the flash memory is set to be less than 1.65 which is a range in which buckling does not occur. It is desirable that a ratio of a length L to a width W of the control gate groups is set to be less than 16.5. | 06-26-2014 |
Patent application number | Description | Published |
20090098669 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A semiconductor device manufacturing method and a semiconductor device manufacturing apparatus which enable to detect an etching end-point with high accuracy are provided. In etching of a lower layer formed on a semiconductor wafer using a mask which comprises a plurality of patterns extending in a predetermined direction (line-and-space patterns) and contains at least one of a metal layer and an electrically-conductive metal compound layer, the surface of the semiconductor wafer is irradiated with inspection light, the etching is performed while monitoring the intensity of the polarized light component perpendicular to the predetermined extending direction of the line-and-space patterns and the etching is terminated at the time the intensity of the polarized light component reaches a reflected light intensity corresponding to a desired remaining thickness of the lower layer. | 04-16-2009 |
20090310645 | SAMPLE TEMPERATURE CONTROL METHOD - A method of stably controlling the temperature of a sample placed on a sample stage to a desired temperature by estimating a sample temperature accurately, the sample stage including a refrigerant flow path to cool the sample stage, a heater to heat the sample stage, and a temperature sensor to measure the temperature of the sample stage. This method comprises the steps of: measuring in advance the variation-with-time of supply electric power to the heater, temperature of the sample, and temperature of the temperature sensor, without plasma processing; approximating the relation among the measured values using a simultaneous linear differential equation; estimating a sample temperature from the variation-with-time of sensor temperature y | 12-17-2009 |
20100167426 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - The invention provides a method for overcoming the drawbacks of deteriorated throughput, deteriorated reproducibility and plasma discharge instability when continuous discharge is performed during multiple steps of plasma etching. The present invention provides a gas switching method for switching from gas supply source | 07-01-2010 |
20110297533 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor | 12-08-2011 |
20140116621 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor | 05-01-2014 |
20150226896 | OPTICAL ELEMENT AND OPTICAL DEVICE - Provided are an optical element and an optical device using the optical element to which a manufacturing process for manufacturing a wire-grid structure can be basically applied, and besides, in which a higher polarization contrast ratio than that of a wire-grid element can be obtained. A wobbled wire element in an embodiment has a feature that a periodic structure having a period equal to or larger than a wavelength of an incident light wave is formed in a y direction. In this manner, in a wobbled wire element in a first embodiment, a polarization contrast ratio can be significantly improved. | 08-13-2015 |
20150234230 | OPTICAL ELEMENT, MANUFACTURING METHOD OF OPTICAL ELEMENT, AND OPTICAL DEVICE - In order to improve a characteristic of an optical element, an optical element (polarizing filter) including a substrate | 08-20-2015 |
20150348763 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power. | 12-03-2015 |