Patent application number | Description | Published |
20080265260 | Power Device - A power device having a transistor structure is formed by using a wide band gap semiconductor. A current path | 10-30-2008 |
20090229845 | HAMMER DRILL - A hammer drill includes a motor; a spindle rotatingly driven by the motor and holding an output bit; a motion conversion member for converting rotational movement of the motor to reciprocating movement; a striker reciprocatingly driven by the motion conversion member for applying an axial striking force to the output bit; a striking-motion-releasing mechanism for releasing the striking force applying action exercised by the striker; and a tightening-torque adjusting clutch for interrupting the transfer of the rotational force to the output bit by increasing a load torque. | 09-17-2009 |
20100193800 | SEMICONDUCTOR DEVICE - A semiconductor device is fabricated on an off-cut semiconductor substrate | 08-05-2010 |
20100295060 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device | 11-25-2010 |
20100295062 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region | 11-25-2010 |
20110220917 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device of the present invention has a semiconductor element region | 09-15-2011 |
20120057386 | SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND POWER CONVERTER - A semiconductor element | 03-08-2012 |
20120139623 | SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND ELECTRIC POWER CONVERTER - A semiconductor element | 06-07-2012 |
20140152374 | SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND POWER CONVERTER - A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer. | 06-05-2014 |