Patent application number | Description | Published |
20090191714 | Method of removing oxides - The present invention provides a method of removing oxides. First, a substrate having the oxides is loaded into a reaction chamber, which includes a susceptor setting in the bottom portion of the chamber, a shower head setting above the susceptor, and a heater setting above the susceptor. Subsequently, an etching process is performed. A first thermal treatment process is then carried out. Finally, a second thermal treatment process is carried out, and a reaction temperature of the second thermal treatment process is higher than a reaction temperature of the first thermal treatment process. | 07-30-2009 |
20090275211 | FABRICATION METHOD OF POROUS LOW-K DIELECTRIC FILM - A method for fabricating a porous low-k dielectric film includes providing a substrate, performing a first CVD process by providing a back-bone precursor to form an interface dielectric layer, performing a second CVD process by providing a porogen precursor to form a back-bone layer, and removing the porogen material in the back-bone layer so that the back-bone layer becomes an ultra low-k dielectric layer. The interface dielectric layer and the ultra low-k dielectric layer compose a porous low-k dielectric film. | 11-05-2009 |
20100035401 | METHOD FOR FABRICATING MOS TRANSISTORS - A method for fabricating metal-oxide transistors is disclosed. First, a semiconductor substrate having a gate structure is provided, in which the gate structure includes a gate dielectric layer and a gate. A source/drain region is formed in the semiconductor substrate, and a cleaning step is performed to fully remove native oxides from the surface of the semiconductor substrate. An oxidation process is conducted to form an oxide layer on the semiconductor substrate and the oxide layer is then treated with fluorine-containing plasma to form a fluorine-containing layer on the surface of the semiconductor substrate. A metal layer is deposited on the semiconductor substrate thereafter and a thermal treatment is performed to transform the metal layer into a silicide layer. | 02-11-2010 |
20110065245 | METHOD FOR FABRICATING MOS TRANSISTOR - A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate and a source/drain region in the semiconductor substrate adjacent to two sides of the gate structure; covering a stress layer on the gate structure and the source/drain region; etching away the stress layer to form a plurality of openings with larger top and smaller bottom to expose surface of the gate structure and the source/drain region; forming a metal layer in the openings; and using the stress layer as a salicide block to react the metal layer with the gate structure and the source/drain region for forming a plurality of silicide layers. | 03-17-2011 |
20110266596 | Semiconductor device and method of making the same - In a method of the present invention during a salicide process, before a second thermal process, a dopant is implanted at a place located in a region ranging from a Ni | 11-03-2011 |
Patent application number | Description | Published |
20090090395 | METHOD OF REMOVING PARTICLES FROM WAFER - A method of removing particles from a wafer is provided. The method is adopted after a process for removing unreactive metal of a salicide process or after a salicide process and having oxide residue remaining on a wafer or after a chemical vapor deposition (CVD) process that resulted with particles on a wafer. The method includes performing at least two cycles (stages) of intermediate rinse process. Each cycle of the intermediate rinse process includes conducting a procedure of rotating the wafer at a high speed first, and then conducting a procedure of rotating the wafer at a low speed. | 04-09-2009 |
20090155999 | METHOD FOR FABRICATING METAL SILICIDE - A method for fabricating a metal silicide film is described. After providing a silicon material layer, a metal alloy layer is formed to cover the silicon material layer. A thermal process is performed to form a metal alloy silicide layer in a self-aligned way. A wet etching process is performed by using a cleaning solution including sulfuric acid and hydrogen peroxide to remove the residual metals and unreacted metal alloy. | 06-18-2009 |
20110147948 | FORMING METHOD AND STRUCTURE OF POROUS LOW-K LAYER, INTERCONNECT PROCESS AND INTERCONNECT STRUCTURE - A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer. | 06-23-2011 |
20120088345 | METHOD OF FORMING SILICIDE FOR CONTACT PLUGS - A method for forming silicide is provided. First, a substrate is provided. Second, a gate structure is formed on the substrate which includes a silicon layer, a gate dielectric layer and at least one spacer. Then, a pair of source and drain is formed in the substrate and adjacent to the gate structure. Later, an interlayer dielectric layer is formed to cover the gate structure, the source and the drain. Afterwards, the interlayer dielectric layer is selectively removed to expose the gate structure. Next, multiple contact holes are formed in the interlayer dielectric layer to expose part of the substrate. Afterwards, the exposed substrate is converted to form silicide. | 04-12-2012 |
20120181635 | Semiconductor device - In a method of the present invention during a salicide process, before a second thermal process, a dopant is implanted at a place located in a region ranging from a Ni | 07-19-2012 |
20130014779 | CLEANING METHOD OF SEMICONDUCTOR MANUFACTURING PROCESSAANM CHEN; Yi-WeiAACI Taichung CityAACO TWAAGP CHEN; Yi-Wei Taichung City TWAANM TSAI; Teng-ChunAACI Tainan CityAACO TWAAGP TSAI; Teng-Chun Tainan City TWAANM LAI; Kuo-ChihAACI Tainan CityAACO TWAAGP LAI; Kuo-Chih Tainan City TWAANM HUANG; Shu-MinAACI Tainan CityAACO TWAAGP HUANG; Shu-Min Tainan City TW - A cleaning method of a semiconductor manufacturing process is provided. The cleaning method is applied to a semiconductor component including a plurality of material layers formed thereon. An opening is defined in the material layers, and a side wall is exposed from the opening The side wall at least includes a first material layer and a second material layer. At first, a first cleaning process is performed till a lateral etched thickness of the first material layer is equal to a lateral etched thickness of the second material layer. Then, a byproduct formed in the first cleaning process is removed. | 01-17-2013 |
20130023098 | MANUFACTURING METHOD FOR METAL GATE - A manufacturing method for a metal gate includes providing a substrate having a dielectric layer and a polysilicon layer formed thereon, the polysilicon layer, forming a protecting layer on the polysilicon layer, forming a patterned hard mask on the protecting layer, performing a first etching process to etch the protecting layer and the polysilicon layer to form a dummy gate having a first height on the substrate, forming a multilayered dielectric structure covering the patterned hard mask and the dummy gate, removing the dummy gate to form a gate trench on the substrate, and forming a metal gate having a second height in the gate trench. The second height of the metal gate is substantially equal to the first height of the dummy gate. | 01-24-2013 |
20130078800 | METHOD FOR FABRICATING MOS TRANSISTOR - A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process. | 03-28-2013 |
20130149820 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes providing a substrate having a first transistor device and a second transistor device formed thereon; forming a patterned stress film covering the second transistor device and exposing the first transistor device on the substrate; performing a pre-amorphous implantation (PAI) process to form an amorphous layer respectively at two sides of the first transistor device, and removing the patterned stress film. | 06-13-2013 |
20130273736 | METHOD FOR FABRICATING MOS TRANSISTOR - A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process. | 10-17-2013 |
20130288456 | SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed. | 10-31-2013 |
20140017888 | SALICIDE PROCESS - A salicide process is described. A substrate having thereon an insulating layer and a silicon-based region is provided. A nickel-containing metal layer is formed on the substrate. A first anneal process is performed to form a nickel-rich silicide layer on the silicon-based region. The remaining nickel-containing metal layer is stripped. A thermal recovery process is performed at a temperature of 150-250° C. for a period longer than 5 minutes. A second anneal process is performed to change the phase of the nickel-rich silicide layer and form a low-resistivity mononickel silicide layer. | 01-16-2014 |
20140242802 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A wafer on a pedestal is provided. The pedestal is lifted to approach a heating source and an etching process is performed on the wafer. An annealing process is performed on the wafer by the heating source. In another way, a wafer on a pedestal, and a heating source on a same side of the wafer as the pedestal are provided. An etching process is performed on the wafer by setting the temperature difference between the heating source and the pedestal larger than 180° C. | 08-28-2014 |
20140248762 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed. | 09-04-2014 |
20150050799 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (PO-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component. | 02-19-2015 |
Patent application number | Description | Published |
20130162412 | REMOTE CONTROL SYSTEM AND METHOD - A remote control system for controlling remotely a plurality of remote controllable appliances includes a first and second mobile terminal, at least one remote control apparatus, a server, and at least one remote control apparatus. The first mobile terminal transmits a first wireless signal in response to a remote controllable appliance selection and a function to be performed to the server. The server transmits a second wireless signal carrying an identification for identifying the selected remote controllable appliance and the selected function to the second mobile terminal. The second mobile terminal transmits a third wireless signal carrying an infrared remote control code correspondingly to the remote control apparatus, thereby the remote control apparatus transmitting an infrared remote control signal carrying the infrared remote control code to the selected remote controllable appliance to execute the selected function. | 06-27-2013 |
20140098042 | TOUCH PANEL - A touch panel includes a first substrate, an electronic circuit board, a second substrate, and a number of touch-sensing members arranged on the electronic circuit board. Each of the touch-sensing members comprises a metal dome, an insulating layer covering the metal dome, and a sensing layer formed on the insulating layer. A number of contacting tabs are arranged on the electronic circuit board corresponding to each of the metal domes. The sensing layer generates a first signal in a touch mode when the touch panel is touched by a conductor. The contacting tab generates a second signal in a button mode when the second substrate is deformed when the second substrate is pressed, and the metal dome comes into contact with the contacting tab. | 04-10-2014 |
20140310753 | TV APPARATUS AND METHOD FOR RECORDING AND PLAYING MULTIMEDIA AUDIOVISUAL PROGRAM - In a method for recording and playing multimedia audiovisual programs using a first television, the first television being is connected to a second television. The first television records a current multimedia audiovisual program being played on the first television in response to a recording command generated according to a user's operation, and sends the recorded multimedia audiovisual program to the second television according to an invoking command received from the second television. | 10-16-2014 |