Patent application number | Description | Published |
20100307561 | DOPED METAL CONTACT - A photovoltaic device can include a second metal layer adjacent to a first layer, where the first layer is positioned adjacent to a substrate, and where the second metal layer includes a dopant; and a copper-indium-gallium diselenide (CIGS) layer adjacent to the second metal layer. | 12-09-2010 |
20100307568 | METAL BARRIER-DOPED METAL CONTACT LAYER - A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant. | 12-09-2010 |
20100326491 | DOPANT-CONTAINING CONTACT MATERIAL - A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant. | 12-30-2010 |
20120031428 | PHOTOVOLTAIC MODULE CLEANER - The present invention relates to methods for cleaning semiconductors used in photovoltaic cells and modules, and methods for manufacturing p-n junctions for photovoltaic cells and modules. | 02-09-2012 |
20130213814 | FILM INSPECTION METHOD - A method for forming a defect marker on a thin film of a photovoltaic device by plating to detect pinholes and/or electrical shunts during device fabrication is disclosed. Also disclosed is a system for implementing such a method. | 08-22-2013 |
20130314093 | METHOD AND SYSTEM EMPLOYING A SOLUTION CONTACT FOR MEASUREMENT - An inline metrology method and system using an electrolytic cell for measuring electrical characteristics of a semiconductor device, such as a photovoltaic device, during manufacture. | 11-28-2013 |
20140261667 | PHOTOVOLTAIC DEVICE HAVING IMPROVED BACK ELECTRODE AND METHOD OF FORMATION - A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoN | 09-18-2014 |
20140261685 | THIN FILM PHOTOVOLTAIC DEVICE WTIH LARGE GRAIN STRUCTURE AND METHODS OF FORMATION - Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdS | 09-18-2014 |
20140370649 | METHOD AND APPARATUS FOR FORMING COPPER(Cu) OR ANTIMONY(Sb) DOPED ZINC TELLURIDE AND CADMIUM ZINC TELLURIDE LAYERS IN A PHOTOVOLTAIC DEVICE - A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer. | 12-18-2014 |
20140374266 | METHOD AND APPARATUS FOR FORMING A CADMIUM ZINC TELLURIDE LAYER IN A PHOTOVOLTAIC DEVICE - A method and apparatus for controlling and changing the composition of a cadmium zinc telluride (CZT) transition layer as it is formed over a partially completed photovoltaic device using electrochemical deposition (ECD) where plating variables are systematically changed while the CZT transition layer is formed to change the composition of the plated CZT transition layer. | 12-25-2014 |