Patent application number | Description | Published |
20100107691 | METHOD OF MANUFACTURING SILICA GLASS CRUCIBLE FOR PULLING SILICON SINGLE CRYSTALS - The disclosed is a method of manufacturing a silica glass crucible for pulling silicon single crystals. In the method, reduced pressure is imparted from the inner surface to the outer surface of a crucible-shaped molded product and the crucible-shaped molded product is arc-fused while rotating the same to form a silica glass crucible with a transparent layer on the inner surface side and a bubble layer on the outer surface side. The inner surface of the wall portion of the silica glass crucible is fused a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the wall portion to be displaced toward the bottom portion of the inner surface of the wall portion. The inner surface of the bottom portion of the silica glass crucible is fuse a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the bottom portion to be displaced toward the periphery of the inner surface of the bottom portion. Either the step of displacement toward the bottom portion or the step of displacement toward the outer periphery is inverted first. | 05-06-2010 |
20100107965 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL, METHOD FOR MANUFACTURING THEREOF AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less. | 05-06-2010 |
20100107970 | SILICA GLASS CRUCIBLE HAVING MULTILAYERED STRUCTURE - Disclosed is a silica glass crucible employed in pulling silicon single crystals. The crucible comprises at least a transparent layer, semitransparent layer, and opaque layer disposed from the inner surface side to the outer surface side of the crucible. The content of bubbles in the transparent layer is less than 0.3 percent; the content of bubbles in the semitransparent layer falls within a range of from 0.3 to 0.6 percent; and the content of bubbles in the opaque layer is greater than 0.6 percent. | 05-06-2010 |
20100112115 | MOLD FOR PRODUCING A SILICA CRUCIBLE - A mold for the production of a silica crucible by heat-fusing silica or quartz powder attached onto an inner wall of a rotating mold, wherein a ring-shaped heat insulating barrier material having a specified inner diameter is disposed on an inner peripheral wall of an upper opening portion of the mold corresponding to an upper region of the silica crucible. | 05-06-2010 |
20100132608 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF - A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 μm or more and 450 μm or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage. | 06-03-2010 |
20100147213 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF - A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less. | 06-17-2010 |
20100162944 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A method for manufacturing a silicon single crystal is provided including producing a silicon melt in a chamber by melting a silicon raw material loaded into a silica glass crucible under a reduced pressure and high temperature, removing gas bubbles from within the silicon melt by rapidly changing at least the pressure or temperature within the chamber, and pulling up the silicon single crystal from the silicon melt after the gas bubbles are removed. When the pressure is rapidly changed, the pressure within the chamber is rapidly changed at a predetermined change ratio. In addition, when the temperature is rapidly changed, the temperature within the chamber is rapidly changed at a predetermined change ratio. In this way, Ar gas attached to an inner surface of the crucible and h is the cause of the generation of SiO gas is removed. | 07-01-2010 |
20100170298 | Vitreous silica crucible manufacturing apparatus - A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R | 07-08-2010 |