Minemoto, JP
Hisashi Minemoto, Ehime JP
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20110012070 | GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 01-20-2011 |
20120168695 | GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 07-05-2012 |
Hisashi Minemoto, Osaka JP
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20080213158 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride - A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material ( | 09-04-2008 |
20100078606 | PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 04-01-2010 |
20100192839 | PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL - A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible. | 08-05-2010 |
20100213576 | METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE USING GROUP III NITRIDE CRYSTAL SUBSTRATE - Disclosed is a method for producing a group III nitride crystal substrate. A group III nitride crystal is formed by a growth method using a flux. The group III nitride crystal substrate is heat treated at a temperature equal to or higher than the lowest temperature at which the flux contained inside the group III nitride crystal substrate through intrusion into the crystal during the crystal formation can be discharged to outside the group III nitride crystal substrate, and equal to or lower than the highest temperature at which the surface of the group III nitride crystal substrate is not decomposed. | 08-26-2010 |
20100230713 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SUCH GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×10 | 09-16-2010 |
20100260656 | GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR GROWING THE SAME - When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt | 10-14-2010 |
20140030549 | GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 01-30-2014 |
20150141834 | PIEZOELECTRIC COMPOSITION AND METHOD FOR PRODUCING SAME, PIEZOELECTRIC ELEMENT/NON-LEAD PIEZOELECTRIC ELEMENT AND METHOD FOR PRODUCING SAME, ULTRASONIC PROBE AND DIAGNOSTIC IMAGING DEVICE - The present invention is a piezoelectric composition and a piezoelectric element using the piezoelectric composition, the composition being characterized by: having a Perovskite structure represented by general formula ABO3; being represented by composition formula x(Bi0.5K0.5)TiO3-yBi(Mg0.5Ti0.5)O3-zBiFeO3, x+y+z=1 in the composition formula above; and in a triangular coordinate using x, y and z in the composition formula above, having a composition represented by a region which is surrounded by a pentagon ABCDE with apexes of point A (1, 0, 0), point B (0.7, 0.3, 0), point C (0.1, 0.3, 0.6), point D (0.1, 0.1, 0.8) and point E (0.2, 0, 0.8) and which does not include the line segment AE that connects point A (1, 0, 0) and point E (0.2, 0, 0.8). | 05-21-2015 |
Masayuki Minemoto, Osaka JP
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20090236493 | MOLD COOLING DEVICE - At the operation of a suction pump VP, a negative pressure is generated in a supply-side pipe line | 09-24-2009 |
Takashi Minemoto, Kusatsu-Shi, Shiga JP
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20150380589 | CIGS FILM, AND CIGS SOLAR CELL EMPLOYING THE SAME - The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film. | 12-31-2015 |
Takashi Minemoto, Kusatsu-Shi JP
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20110207297 | Method for Manufacturing Chalcopyrite Film - A highly safe method of obtaining chalcopyrite film wherein a Ib group metal and IIIb group metal are sufficiently combined with a VIb group element by only heat treatment without using an atmosphere containing a VIb group element (Se, S, Te). | 08-25-2011 |
20140220729 | METHOD OF PRODUCING CIGS FILM, AND METHOD OF PRODUCING CIGS SOLAR CELL BY USING SAME - A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film. | 08-07-2014 |
20150357492 | CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD - A CIGS film production method capable of suppressing oxidation of a front surface of a CIGS film, and a CIGS solar cell production method using the CIGS film production method includes the steps of: forming a first region having a Ga/(In+Ga) ratio progressively reduced as the thickness of the first region increases to a predetermined first thickness position from a back surface of the CIGS film; forming a second region having a Ga/(In+Ga) ratio progressively increased as the thickness of the second region increases to a predetermined second thickness position from the first region; and forming a third region on the second region by vapor-depositing Se and In, the third region having a Ga/(In+Ga) ratio progressively reduced toward a front surface of the CIGS film. | 12-10-2015 |
Yasuhisa Minemoto, Akashi Hyogo JP
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20090264850 | Absorbent Article Having Stretchable Fastening Member - An absorbent article comprising a stretchable fastening member is disclosed. The absorbent article comprises a chassis and a stretchable fastening member. The chassis extends longitudinally and laterally and comprises a liquid pervious topsheet, a liquid impervious backsheet and an absorbent core disposed therebetween. The stretchable fastening member comprises a fixed portion permanently joined to the chassis, a distal portion provided with a fastening material and a stretchable panel positioned between the fixed portion and the distal portion. The stretchable fastening member is joined to the chassis such that the distal portion is positioned laterally outwardly from the fixed portion in the flat-out configuration of the stretchable fastening member. The stretchable panel of the stretchable fastening member comprises a first stretchable zone and a second stretchable zone disposed in the lateral direction. The first stretchable zone is capable of providing extensibility upon an initially applied extension force. Extensibility of the second stretchable zone is restricted by a restriction means until the restriction means is inactivated, and the restriction means is inactivated upon a further applied extension force such that the second stretchable zone provides an additional extensibility to reduce a stress developed in the stretchable panel. | 10-22-2009 |
Yasutoshi Minemoto, Niihama-Shi JP
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20140377630 | LAMINATED POROUS FILM, SEPARATOR FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - An object of the present invention is to provide a laminated porous film excellent in handling ability. A laminated porous film having a layer containing a polymer other than a polyolefin laminated on at least one surface of a polyolefin porous film, wherein the uplift quantity of a side perpendicular to the machine direction, when allowed to stand still for 1 hour under an environment of a temperature of 23° C. and a humidity of 50%, is 15 mm or less. | 12-25-2014 |
20150202647 | ROLL MEMBER, COATING DEVICE, SEPARATOR PRODUCTION DEVICE, AND SECONDARY BATTERY PRODUCTION DEVICE - A roll member having an outer circumferential surface in which a plurality of grooves are formed, wherein the plurality of grooves are arranged at an angle relative to a direction parallel to a central axis of the roll member. A coating device for coating a film member with a coating liquid, the coating device comprising the roll member. A separator production device for producing a separator in which a heat-resistant layer is laminated over a substrate. The separator production device comprising the coating device. A secondary battery production device for producing a secondary battery comprising a positive electrode plate, a negative electrode plate, and a pair of separators that sandwich the positive electrode plate or the negative electrode plate therebetween. The secondary battery production device comprising the separator production device. | 07-23-2015 |
Yuuji Minemoto, Kanagawa-Ken JP
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20110077161 | SUPERCONDUCTING MAGNET DEVICE FOR SINGLE CRYSTAL PULLING APPARATUS - A superconducting magnet device for a single crystal pulling apparatus is arranged outside a pulling furnace containing a crucible for melting a single crystal material therein so as to apply a magnetic field to the melted single crystal material. The superconducting magnet device for a single crystal pulling apparatus includes a cryostat containing a superconducting coil therein, and a refrigerator port arranged on the outer circumferential surface of the cryostat and provided with a cryogenic refrigerator that cools the superconducting coil. The cryogenic refrigerator is provided in a region of the outer surface region of the cryostat at which the intensity of the magnetic field generated by the superconducting coil is weak. | 03-31-2011 |