Patent application number | Description | Published |
20130082762 | POWER SWITCH SERIES CIRCUIT AND CONTROL METHOD THEREOF - The present invention provides a power switch series circuit and its control method. The power switch series circuit includes a plurality of series modules, a control module and a drive module. At least one series module has a power switch and a detection module, and the detection module includes a detection unit and an isolation unit, so as to detect the overvoltage and output a voltage detection signal based on the detected voltage. The control module receives the voltage detection signal and outputs the corresponding control signal. The drive module amplifies the control signal to drive each power switch to turn ON or turn OFF. The control module outputs the corresponding control signal to turn off each power switch when the overvoltage happens. | 04-04-2013 |
20130083576 | POWER SEMICONDUCTOR SWITCH SERIES CIRCUIT AND CONTROL METHOD THEREOF - The present disclosure provides a power semiconductor switch series circuit. The power semiconductor switch series circuit includes a plurality of series modules and a system control module. Each series module has a power semiconductor switch; a drive module for driving each power semiconductor switch to be turned on or turned off; a short-circuit detection unit for outputting at least one detection signal; an equalizer circuit; a comparison module for comparing the detection signal with a predetermined threshold, and outputting a short-circuit signal when the detection signal exceeds the predetermined threshold; and a soft turn-off module for receiving the short-circuit signal and outputting a second control signal. The system control module receives the short-circuit signal and outputs a first control signal. | 04-04-2013 |
20150076555 | SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF - A semiconductor device is provided. The semiconductor device includes a semiconductor substrate; and a body region and a drift region formed in the semiconductor substrate. The semiconductor device also includes a bulk region and a source region formed in the body region. Further, the semiconductor device includes a drain region and a first shallow trench isolation structure having a ladder-like bottom formed in the drift region. Further, the semiconductor device also includes a gate structure spanning over an edge of the body region and an edge of the drift region formed on the semiconductor substrate and covering a portion of the first shallow trench isolation structure. | 03-19-2015 |
20150155770 | FIVE-LEVEL RECTIFIER - Disclosed herein is a five-level rectifier that includes first, second, third, fourth power semiconductor switches, first and second DC bus capacitors, a phase capacitor, and first, second, third and fourth diode modules. The first, second, third and fourth diode modules are connected in series, the first and second DC bus capacitors are connected in series, and the second and third power semiconductor switches are connected in series. The first diode module is connected to the first DC bus capacitor and the first power semiconductor switch, and the fourth diode module is connected to the second DC bus capacitor and the fourth power semiconductor switch. The phase capacitor has a terminal connected to the first and second power semiconductor switches, and another terminal connected to the third and fourth power semiconductor switches. | 06-04-2015 |
20150187928 | SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE - A semiconductor device may include a first-type substrate. The semiconductor device may further include a second-type well configured to form a PN junction with the first-type substrate. The semiconductor device may further include a diode component configured to form a diode with the second-type well. The diode may be connected to the PN junction in a reverse series connection. The second-type may be N-type if the first-type is P-type, and wherein the second-type may be P-type if the first-type is N-type. | 07-02-2015 |
20150362528 | VOLTAGE SAMPLING SYSTEM - A voltage sampling system is provided. The voltage sampling system includes a voltage sampling device, two optic-fiber transmission lines and a control device. The voltage sampling device includes a voltage-dividing resistor module, a common mode rejection circuit and an analog-to-digital converter. The voltage-dividing resistor module generates a first and a second divided voltages according to a voltage source. The common mode rejection circuit receives the first and the second divided voltages to perform a common-mode noise rejecting process to generate an output voltage. The analog-to-digital converter converts the output voltage to generate a digital data signal. The two optic-fiber transmission lines transmit the digital data signal and a clock signal respectively. The control device receives the digital data signal from the analog-to-digital converter and the clock signal to perform a digital data processing. | 12-17-2015 |
20150362529 | POWER CONVERSION SYSTEM AND VOLTAGE SAMPLING DEVICE THEREOF - A voltage sampling system is provided. The voltage sampling system includes a first and a second input paths and a signal-processing module. The first input path includes a first input voltage-dividing resistor unit, a second input voltage-dividing resistor unit and a first DC voltage-dividing resistor unit to generate a first input divided voltage and a first DC bias voltage to further generate a first sampled voltage signal according to a first input voltage and a DC voltage source. The second input path includes a third input voltage-dividing resistor unit, a fourth input voltage-dividing resistor unit and a second DC voltage-dividing resistor unit to generate a second input divided voltage and a second DC bias voltage to further generate a second sampled voltage signal according to a second input voltage and the DC voltage source. The signal-processing module receives the first and the second sampled voltage signals to perform signal processing. | 12-17-2015 |
20150364909 | POWER CONVERTER, SHORT-CIRCUIT DETECTING DEVICE THEREOF AND SHORT-CIRCUIT DETECTING METHOD THEREOF - A short-circuit detecting device includes a coil and a processing circuit. The coil is configured to detect a variation of magnetic flux intensity generated by a current variation of a current flowing through a power semiconductor switch and to generate an induced electromotive force based on the variation of magnetic flux intensity. When the current variation rate of said current is greater than a predetermined value, the processing circuit is configured to generate a short-circuit signal based on the induced electromotive force so as to turn off the power semiconductor switch based on the short-circuit signal. | 12-17-2015 |