Patent application number | Description | Published |
20090087645 | Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor Device - Affords methods of manufacturing AlN crystals, and AlN crystals, AlN crystal substrates, and semiconductor devices fabricated employing the AlN crystal substrates, that enable semiconductor devices having advantageous properties to be obtained. One aspect of the present invention is an AlN crystal manufacturing method including a step of growing AlN crystal onto the surface of a SiC seed-crystal substrate, and a step of picking out at least a portion of the AlN crystal lying a range of from 2 mm to 60 mm from the SiC seed-crystal substrate surface into the AlN crystal. Furthermore, other aspects are AlN crystals and AlN crystal substrates manufactured by the method, and semiconductor devices fabricated employing the AlN crystal substrates. | 04-02-2009 |
20090158994 | METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROWING DEVICE FOR GROUP III NITRIDE SEMICONDUCTOR CRYSTAL - A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material | 06-25-2009 |
20090208749 | Group III Nitride Single Crystal and Method of Its Growth - Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal ( | 08-20-2009 |
20090236694 | Method of Manufacturing III-Nitride Crystal, and Semiconductor Device Utilizing the Crystal - The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal ( | 09-24-2009 |
20090280354 | Process for Producing Substrate of AlN Crystal, Method of Growing AlN Crystal, and Substrate of AlN Crystal - Affords AlN crystal substrate manufacturing methods whereby large-scale, high-quality AlN crystal substrates can be manufactured; AlN crystal growth methods whereby bulk AlN of superior crystallinity can be grown; and AlN crystal substrates composed of the AlN crystal grown by the growth methods. AlN crystal substrate manufacturing method including: a step of growing an AlN crystal by sublimation onto a heterogeneous substrate to a thickness of, with respect to the heterogeneous-substrate diameter r, 0.4 | 11-12-2009 |
20100143748 | Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal - Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer. | 06-10-2010 |
20100147211 | -Nitride Single-Crystal Growth Method - This III-nitride single-crystal growth method, being a method of growing a Al | 06-17-2010 |
20100209622 | Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride - Flat, thin AlN membranes and methods of their manufacture are made available. | 08-19-2010 |
20100221539 | AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate - Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal ( | 09-02-2010 |
20100233433 | Method for Growing AlxGa1-xN Crystal, and AlxGa1-xN Crystal Substrate | 09-16-2010 |
20100242833 | AlN Crystal and Method of Its Growth - The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate ( | 09-30-2010 |
20100307405 | Method for Growing AlxGa1-xN Single Crystal - Affords a method of growing large-scale, high-quality Al | 12-09-2010 |
20100319614 | Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method - A compound semiconductor single-crystal manufacturing device ( | 12-23-2010 |
20110042684 | Method of Growing AlN Crystals, and AlN Laminate - Affords an AlN crystal growth method, and an AlN laminate, wherein AlN of favorable crystalline quality is grown. The AlN crystal growth method is provided with the following steps. To begin with, a source material ( | 02-24-2011 |
20110076453 | AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body - Affords an Al | 03-31-2011 |
20120315445 | Group-III Nitride Crystal Composite - III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way. | 12-13-2012 |
20130015414 | AlxGa1-xN Crystal Substrate | 01-17-2013 |
20130160699 | Method of Manufacturing III-Nitride Crystal - Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. | 06-27-2013 |
20130171542 | GAS DECOMPOSITION COMPONENT, POWER GENERATION APPARATUS, AND METHOD FOR DECOMPOSING GAS - A gas decomposition component includes a cylindrical membrane electrode assembly (MEA) including a first electrode layer, a cylindrical solid electrolyte layer, and a second electrode layer in order from an inside toward an outside, in a layered structure, wherein an end portion of the cylindrical MEA is sealed, a gas guide pipe is inserted through another end portion of the cylindrical MEA into an inner space of the cylindrical MEA to form a cylindrical channel between the gas guide pipe and an inner circumferential surface of the cylindrical MEA, and a gas flowing through the gas guide pipe toward the sealed portion is made to flow out of the gas guide pipe in a region near the sealed portion so that a flow direction of the gas is reversed and the gas flows through the cylindrical channel in a direction opposite to the flow direction in the guide pipe. | 07-04-2013 |
20130224612 | GAS DECOMPOSITION COMPONENT, POWER GENERATION APPARATUS, AND METHOD FOR DECOMPOSING GAS - Provided are a gas decomposition component, a power generation apparatus including the gas decomposition component, and a method for decomposing a gas. A gas decomposition component includes a cylindrical MEA including a first electrode layer, a cylindrical solid electrolyte layer, and a second electrode layer in order from an inside toward an outside, in a layered structure; a first gas channel through which a first gas that is decomposed flows, the first gas channel being disposed inside the cylindrical MEA; and a second gas channel through which a second gas flows, the second gas channel being disposed outside the cylindrical MEA, wherein the gas decomposition component further includes a heater for heating the entirety of the component; and a preheating pipe through which the first gas to be introduced into the first gas channel passes beforehand to be preheated. | 08-29-2013 |
20130260280 | GAS DECOMPOSITION COMPONENT, METHOD FOR PRODUCING GAS DECOMPOSITION COMPONENT, AND POWER GENERATION APPARATUS - Provided are a gas decomposition component, a method for producing a gas decomposition component, and a power generation apparatus. A gas decomposition component | 10-03-2013 |
20140175616 | Composite of III-Nitride Crystal on Laterally Stacked Substrates - Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. | 06-26-2014 |
20150044596 | SOLID ELECTROLYTE LAMINATE, METHOD FOR MANUFACTURING SOLID ELECTROLYTE LAMINATE, AND FUEL CELL - Provided is a solid electrolyte laminate comprising a solid electrolyte layer having proton conductivity and a cathode electrode layer laminated on one side of the solid electrolyte layer and made of lanthanum strontium cobalt oxide (LSC). Also provided is a method for manufacturing the solid electrolyte. This solid electrolyte laminate can further comprise an anode electrode layer made of nickel-yttrium doped barium zirconate (Ni—BZY). This solid electrolyte laminate is suitable for a fuel cell operating in an intermediate temperature range less than or equal to 600° C. | 02-12-2015 |
20150044597 | SOLID ELECTROLYTE, METHOD FOR MANUFACTURING SOLID ELECTROLYTE, SOLID ELECTROLYTE LAMINATE, METHOD FOR MANUFACTURING SOLID ELECTROLYTE LAMINATE, AND FUEL CELL - Provided is a solid electrolyte made of yttrium-doped barium zirconate having hydrogen ion conductivity, a doped amount of yttrium being 15 mol % to 20 mol %, and a rate of increase in lattice constant at 100° C. to 1000° C. with respect to temperature changes being substantially constant. Also provided is a method for manufacturing the solid electrolyte. This solid electrolyte can be formed as a thin film, and a solid electrolyte laminate can be obtained by laminating electrode layers on this solid electrolyte. This solid electrolyte can be applied to an intermediate temperature operating fuel cell. | 02-12-2015 |