Patent application number | Description | Published |
20090200636 | SUB-LITHOGRAPHIC DIMENSIONED AIR GAP FORMATION AND RELATED STRUCTURE - Sub-lithographic dimensioned air gap formation and related structure are disclosed. In one embodiment, a method includes forming a dielectric layer including interconnects on a substrate; depositing a cap layer on the dielectric layer; depositing a photoresist over the cap layer; patterning the photoresist to include a first trench pattern at most partially overlying the interconnects; forming a spacer within the first trench pattern to form a second trench pattern having a sub-lithographic dimension; transferring the second trench pattern into the cap layer and into the dielectric layer between the interconnects; and depositing another dielectric layer to form an air gap by pinching off the trench in the dielectric layer. | 08-13-2009 |
20100252810 | GATE PATTERNING OF NANO-CHANNEL DEVICES - Methodologies and gate etching processes are presented to enable the fabrication of gate conductors of semiconductor devices, such as NFETs and/or PFETs, which are equipped with nano-channels. In one embodiment, a sacrificial spacer of equivalent thickness to the diameter of the gate nano-channel is employed and is deposited after patterning the gate conductor down to the gate dielectric. The residue gate material that is beneath the nano-channel is removed utilizing a medium to high density, bias-free, fluorine-containing or fluorine- and chlorine-containing isotropic etch process without compromising the integrity of the gate. In another embodiment, an encapsulation/passivation layer is utilized. In yet further embodiment, no sacrificial spacer or encapsulation/passivation layer is used and gate etching is performed in an oxygen and nitrogen-free ambient. | 10-07-2010 |
20110303274 | SOLAR CELLS WITH PLATED BACK SIDE SURFACE FIELD AND BACK SIDE ELECTRICAL CONTACT AND METHOD OF FABRICATING SAME - The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer. | 12-15-2011 |
20120325312 | SOLAR CELLS WITH PLATED BACK SIDE SURFACE FIELD AND BACK SIDE ELECTRICAL CONTACT AND METHOD OF FABRICATING SAME - The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer. | 12-27-2012 |
20130105916 | HIGH SELECTIVITY NITRIDE ETCH PROCESS | 05-02-2013 |
20130105947 | HIGH ASPECT RATIO AND REDUCED UNDERCUT TRENCH ETCH PROCESS FOR A SEMICONDUCTOR SUBSTRATE | 05-02-2013 |
20130105996 | LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER | 05-02-2013 |
20130108833 | HIGH FIDELITY PATTERNING EMPLOYING A FLUOROHYDROCARBON-CONTAINING POLYMER | 05-02-2013 |
20130328173 | HIGH ASPECT RATIO AND REDUCED UNDERCUT TRENCH ETCH PROCESS FOR A SEMICONDUCTOR SUBSTRATE - A hydrofluorocarbon gas is employed as a polymer deposition gas in an anisotropic etch process employing an alternation of an etchant gas and the polymer deposition gas to etch a deep trench in a semiconductor substrate. The hydrofluorocarbon gas can generate a thick carbon-rich and hydrogen-containing polymer on sidewalls of a trench at a thickness on par with the thickness of the polymer on a top surface of the semiconductor substrate. The thick carbon-rich and hydrogen-containing polymer protects sidewalls of a trench, thereby minimizing an undercut below a hard mask without degradation of the overall rate. In some embodiments, an improvement in the overall etch rate can be achieved. | 12-12-2013 |
20140120903 | BASE STATION POWER CONTROL IN A MOBILE NETWORK - The present disclosure relates generally to the field of base station power control in a mobile network. In various examples, base station power control in a mobile network may be implemented in the form of systems, methods and/or algorithms. | 05-01-2014 |
20140120904 | BASE STATION POWER CONTROL IN A MOBILE NETWORK - The present disclosure relates generally to the field of base station power control in a mobile network. In various examples, base station power control in a mobile network may be implemented in the form of systems, methods and/or algorithms. | 05-01-2014 |
20140273437 | SUBTRACTIVE PLASMA ETCHING OF A BLANKET LAYER OF METAL OR METAL ALLOY - A method of forming at least one metal or metal alloy feature in an integrated circuit is provided. In one embodiment, the method includes providing a material stack including at least an etch mask located on a blanker layer of metal or metal alloy. Exposed portions of the blanket layer of metal or metal alloy that are not protected by the etch mask are removed utilizing an etch comprising a plasma that forms a polymeric compound and/or complex which protects a portion of the blanket layer of metal or metal alloy located directly beneath the etch mask during the etch. | 09-18-2014 |