Patent application number | Description | Published |
20150149693 | Targeted Copy of Data Relocation - In a nonvolatile memory array that has a binary cache formed of SLC blocks and a main memory formed of MLC blocks, corrupted data along an MLC word line is corrected and relocated, along with any other data along the MLC word line, to binary cache, before it becomes uncorrectable. Subsequent reads of the relocated data directed to binary cache. | 05-28-2015 |
20150318055 | System Method and Apparatus for Screening a Memory System - A system and method of writing data to a memory block includes receiving user data in a memory controller, the user data to be written to the memory block. The user data is first written to a buffer in the memory controller. A screening pattern is written to at least one screening column in the memory block and a first memory integrity test is performed. The first memory integrity test includes reading screening column data from the at least one screening column and comparing the screening column data read from the at least one screening column to the screening pattern. The user data is written to at least one user data column in the memory block when the screening column data read from the at least one screening column matches the screening pattern in the first memory integrity test. | 11-05-2015 |
20150339195 | METHOD AND SYSTEM FOR SECURE SYSTEM RECOVERY - Apparatus and methods implemented therein are disclosed for recovery of information stored in non-volatile memory of embedded and external solid-state memory devices. The apparatus comprises a memory system. The memory system has a non-volatile memory and a memory controller. The memory controller is coupled to the non-volatile memory. The memory controller is also coupled to a memory interface. The memory controller searches the non-volatile memory to locate initialization information required to initialize the memory controller. The memory controller, in response to failing to successfully locate or execute the initialization information, is configured to transmit an indication via the memory interface. | 11-26-2015 |
20150347228 | METHOD AND APPARATUS FOR RELOCATING DATA IN NON-VOLATILE MEMORY - Apparatus and methods implemented therein are disclosed for relocating data stored in pages of a non-volatile memory. The number of memory chunks with invalid data in an SLC type first page is determined and if the number is above a first threshold and above a second threshold, a bit error rate (BER) for the valid data in the set of memory chunks of the first page is compared with a first BER threshold. If the BER is below the first BER threshold, an error correcting code (ECC) for valid data in a set of memory chunks of a second page is computed and the invalid data of the first page with valid data is replaced with valid data from the second page and the computed ECC. The valid data of the first and second page is relocated to a third page. | 12-03-2015 |
20160077903 | Selective Sampling of Data Stored in Nonvolatile Memory - Data stored in a nonvolatile memory is selectively sampled based on write-erase cycle counts of blocks. Blocks with the lowest write-erase cycle counts are sampled to determine an error rate which is compared with a limit. If the error rate exceeds the limit then the sample is expanded to include blocks with the next lowest write-erase cycle counts. | 03-17-2016 |
20160098216 | SYSTEM AND METHOD FOR REFRESHING DATA IN A MEMORY DEVICE - Systems, apparatuses, and methods are provided that refresh data in a memory. Data is programmed into the memory. After which, part or all of the data may be refreshed. The refresh of the data may be different from the initial programming of the data in one or more respects. For example, the refresh of the data may include fewer steps than the programming of the data and may be performed without erasing a section of memory. Further, the refresh of the data may be triggered in one of several ways. For example, after programming the data, the data may be analyzed for errors. Based on the number of errors found, the data may be refreshed. | 04-07-2016 |
20160141041 | Partial Erase of Nonvolatile Memory Blocks - Erasing blocks of a nonvolatile memory may include two erase steps. A first erase step brings the memory cells of a block to an intermediate state between their programmed states and an erased state. The block is then maintained with the memory cells in the intermediate state for a period of time. Subsequently, a second erase step on the block brings the memory cells from the intermediate state to the erased state | 05-19-2016 |
20160141047 | Boundary Word Line Operation in Nonvolatile Memory - One or more word lines in a Multi Level Cell (MLC) block are identified as being at high risk of read disturb errors and data is selectively copied from such high risk word lines to a location outside the MLC block where the copy is maintained. Subsequent read requests for the data may be directed to the copy of the data outside the MLC block. | 05-19-2016 |