Poelzl
Andreas Poelzl, Krems AT
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20110220740 | PRESSURE CONTROL VALVE - The invention relates to a pressure control valve, particularly for a high-pressure accumulator body of a fuel injection system. The pressure control valve includes a housing and an armature assembly having an armature plate and an armature pin. The armature plate and an end surface of the housing delimit a volume that can be filled with medium taken from the high-pressure accumulator. The volume is reduced by a fill volume. | 09-15-2011 |
Gerhard Poelzl, Bad Gams AT
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20160061082 | CATALYST MODULE WITH CATALYST ELEMENTS - The invention relates to a catalyst module with internal fittings made of catalyst elements, wherein the surface area of the individual catalyst elements, against which flow is directed, is greater than the flow entry surface area of the catalyst module, wherein the surface of the module side facing the main direction of flow is defined as the module entry surface, and wherein the catalyst elements in the catalyst module are positioned such that flue gas glows through said elements in a direction differing from the entry side and/or the exit side direction of flow. | 03-03-2016 |
Helmut Poelzl, St. Martin I.s. AT
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20090179731 | Resistor Arrangement - According to a first preferred embodiment, a resistor arrangement with resistor elements is specified whose first electrodes are conductively connected to each other by means of a flexible, conductive connection element that is curved. The connection element has changes in curvature in the regions arranged between two adjacent resistor elements. According to a second preferred embodiment, a resistor arrangement with resistor elements is specified that are connected to each other by a flexible connection element. The resistor elements each have an arrangement of slot-like recesses. | 07-16-2009 |
Martin Poelzl, Ossicah AT
Patent application number | Description | Published |
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20100117144 | SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE - In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material. | 05-13-2010 |