Patent application number | Description | Published |
20130036934 | GAS GENERATOR WITH TWO PYROTECHNIC CHARGES - A gas generator has two pyrotechnic charges in two chambers having openings for gas outlet to the outside. Only the first chamber is provided with an igniter for first charge. The chambers are separated by a third wall with a through hole for permanent gas communication, sealed in an initial state by a cap. The cap is configured to be broken under the pressure of the combustion gases from first charge to keep the hole opened permanently and allow the combustion gases from the first charge to go via the hole kept permanently opened from a first chamber to a second chamber, where these gases induce the combustion of charge. When in an initial state, the cap is configured to go under the pressure of the combustion gases from second charge to the permanent state, in which the cap is broken to keep hole opened permanently and allow the combustion gases from said second charge to go via the hole kept permanently open from the second chamber to the first chamber, where this combustion gases induce the combustion of charge. | 02-14-2013 |
20130039814 | GAS GENERATOR AND ITS MANUFACTURING PROCESS - A gas generator includes a pyrotechnic charge contained in a chamber delimited by a wall and by two transversal walls. At least one of the walls comprises at least one through hole. A covering sheet in the form of a box is located facing the through hole. A seal gasket is provided between the sheet and one of the walls. The seal gasket is positioned between the first tubular part of the covering sheet and the wall for ensuring the seal between the box and the wall towards the through hole. | 02-14-2013 |
20130068123 | GAS GENERATOR AND MANUFACTURING PROCESS THEREOF - A gas generator includes an initiator having a case, two electrodes and a cap having a wall delimiting an aperture for insertion of the case, a part delimiting an aperture for access to the electrodes and a retaining part made of plastic material overmoulded into the aperture between the initiator, the cap and the part. The wall includes, near the aperture and the protrusion retaining the cap, a second protrusion for supporting the mould in a support direction having a component extending from the bottom toward the aperture, the second protrusion having an outer edge at least partially not covered by the part for use as a support surface in said support direction for a mould to be used for overmoulding. | 03-21-2013 |
Patent application number | Description | Published |
20130036934 | GAS GENERATOR WITH TWO PYROTECHNIC CHARGES - A gas generator has two pyrotechnic charges in two chambers having openings for gas outlet to the outside. Only the first chamber is provided with an igniter for first charge. The chambers are separated by a third wall with a through hole for permanent gas communication, sealed in an initial state by a cap. The cap is configured to be broken under the pressure of the combustion gases from first charge to keep the hole opened permanently and allow the combustion gases from the first charge to go via the hole kept permanently opened from a first chamber to a second chamber, where these gases induce the combustion of charge. When in an initial state, the cap is configured to go under the pressure of the combustion gases from second charge to the permanent state, in which the cap is broken to keep hole opened permanently and allow the combustion gases from said second charge to go via the hole kept permanently open from the second chamber to the first chamber, where this combustion gases induce the combustion of charge. | 02-14-2013 |
20130039814 | GAS GENERATOR AND ITS MANUFACTURING PROCESS - A gas generator includes a pyrotechnic charge contained in a chamber delimited by a wall and by two transversal walls. At least one of the walls comprises at least one through hole. A covering sheet in the form of a box is located facing the through hole. A seal gasket is provided between the sheet and one of the walls. The seal gasket is positioned between the first tubular part of the covering sheet and the wall for ensuring the seal between the box and the wall towards the through hole. | 02-14-2013 |
20130068123 | GAS GENERATOR AND MANUFACTURING PROCESS THEREOF - A gas generator includes an initiator having a case, two electrodes and a cap having a wall delimiting an aperture for insertion of the case, a part delimiting an aperture for access to the electrodes and a retaining part made of plastic material overmoulded into the aperture between the initiator, the cap and the part. The wall includes, near the aperture and the protrusion retaining the cap, a second protrusion for supporting the mould in a support direction having a component extending from the bottom toward the aperture, the second protrusion having an outer edge at least partially not covered by the part for use as a support surface in said support direction for a mould to be used for overmoulding. | 03-21-2013 |
Patent application number | Description | Published |
20120261670 | BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION - A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer. | 10-18-2012 |
20120261732 | METHOD FOR FORMING A BACK-SIDE ILLUMINATED IMAGE SENSOR - A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it. | 10-18-2012 |
20120261783 | BACK-SIDE ILLUMINATED IMAGE SENSOR PROVIDED WITH A TRANSPARENT ELECTRODE - A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode. | 10-18-2012 |
20120306035 | PROCESS FOR FABRICATING A BACKSIDE-ILLUMINATED IMAGING DEVICE AND CORRESPONDING DEVICE - An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material. | 12-06-2012 |
20140217541 | BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION - A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer. | 08-07-2014 |
20140374808 | SEMICONDUCTOR COMPONENT WITH TRENCH GATE - The present invention relates to a semiconductor component ( | 12-25-2014 |