Patent application number | Description | Published |
20100109059 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME, AND SOLID-STATE IMAGE PICKUP DEVICE USING THE SAME - Disclosed herein is a semiconductor device, including: a gate electrode formed on a semiconductor substrate through a gate insulating film; an extension region formed in the semiconductor substrate on a source side of the gate electrode; a source region formed in the semiconductor substrate on the source side of the gate electrode through the extension region; an LDD region formed in the semiconductor substrate on a drain side of the gate electrode; and a drain region formed in the semiconductor substrate on the drain side of the gate electrode through the LDD region; wherein the extension region is formed at a higher concentration than that of the LDD region so as to be shallower than the LDD region. | 05-06-2010 |
20120242875 | SOLID STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit. | 09-27-2012 |
20140106495 | SOLID STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit. | 04-17-2014 |
20140239360 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME, AND SOLID-STATE IMAGE PICKUP DEVICE USING THE SAME - A semiconductor device, including: a gate electrode formed on a semiconductor substrate through a gate insulating film; an extension region formed in the semiconductor substrate on a source side of the gate electrode; a source region formed in the semiconductor substrate on the source side of the gate electrode through the extension region; an LDD region formed in the semiconductor substrate on a drain side of the gate electrode; and a drain region formed in the semiconductor substrate on the drain side of the gate electrode through the LDD region; wherein the extension region is formed at a higher concentration than that of the LDD region so as to be shallower than the LDD region. | 08-28-2014 |
20140273327 | SOLID STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit. | 09-18-2014 |
20160005777 | SOLID STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit. | 01-07-2016 |
20160093659 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - There is provided a solid-state image pickup device including: a semiconductor substrate ( | 03-31-2016 |
20160128161 | ILLUMINATION CONTROL METHOD AND ILLUMINATION CONTROL SYSTEM AND ILLUMINATION SYSTEM USING THE SAME - An illumination control system includes a first type illumination controller which detects presence of a person in an illumination space to be illuminated by an illumination apparatus, the illumination apparatus being connectable to the first type illumination controller, and a second type illumination controller which detects brightness in the illumination space, the second type illumination controller being connected to the first type illumination controller. The second type illumination controller derives a degree of dimming based on the detected brightness, and notifies the degree of dimming to the first type illumination controller. Upon detecting the presence of a person, the first type illumination controller controls dimming of the illumination apparatus according to the degree of dimming notified from the second type illumination controller. | 05-05-2016 |