Patent application number | Description | Published |
20100175749 | SOLAR CELL AND METHOD FOR MANUFACTURING METAL ELECTRODE LAYER TO BE USED IN THE SOLAR CELL - A solar cell includes: a first electrode layer formed on a substrate; a generating layer formed on the first electrode layer; and a second electrode layer formed on the generating layer, at least one of the first electrode layer and the second electrode layer being a metal electrode layer having optical transparency, the metal electrode layer having a plurality of openings that penetrate through the metal electrode layer. The metal electrode layer includes metal parts, any two metal parts of the metal electrode layer continues to each other without a cut portion, the metal electrode layer has a film thickness in the range of 10 nm to 200 nm, and sizes of the openings are equal to or smaller than ½ of the wavelength of light to be used for generating electricity. | 07-15-2010 |
20120112171 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films. | 05-10-2012 |
20130183828 | PATTERN FORMATION METHOD AND GUIDE PATTERN MATERIAL - According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers. | 07-18-2013 |
20140097485 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films. | 04-10-2014 |
20150044835 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films. | 02-12-2015 |
Patent application number | Description | Published |
20100020372 | HOLOGRAPHIC RECORDING MEDIUM AND OPTICAL INFORMATION RECORDING/REPRODUCING APPARATUS - A holographic recording medium is provided. The medium includes a recording layer. The recording layer includes a polymer matrix, a polymerizable monomer and a photopolymerization initiator. The polymerizable monomer includes a monomer being expressed in the following general formula (M1), (M2), or (M3). | 01-28-2010 |
20100074074 | METHOD AND APPARATUS FOR RECORDING OPTICAL INFORMATION, AND METHOD AND APPARATUS FOR REPRODUCING OPTICAL INFORMATION - An optical information recording apparatus includes a first optical system that radiates an information beam that carries information onto a recording medium; a second optical system that radiates reference beams onto the recording medium; a radiation position specifying unit that specifies a plurality of recording spots positioned within a radiation range of the reference beams; and an incident angle obtaining unit that specifies an incident angle of the reference beams that is used for recording an i'th interference fringe into a second recording spot adjacent to a first recording spot, as a value obtained by adding a product of 1/(1+m) and an absolute value of a difference between an incident angle of a first reference beam used for recording an i'th interference fringe into the first recording spot and an incident angle of a second reference beam used for recording an (i+1)'th interference fringe into the first recording spot. | 03-25-2010 |
20120228576 | STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings. | 09-13-2012 |
20120241713 | ORGANIC MOLECULAR MEMORY - An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups. | 09-27-2012 |
20140008601 | ORGANIC MOLECULAR MEMORY - An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents. | 01-09-2014 |
20150228335 | ORGANIC MOLECULAR MEMORY - An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups. | 08-13-2015 |
20150236171 | ORGANIC MOLECULAR MEMORY - An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents. | 08-20-2015 |
Patent application number | Description | Published |
20080225681 | OPTICAL RECORDING MEDIUM - According to an aspect of the present invention, there is provided an optical recording medium including a first substrate, a first adjusting layer, an organic recording layer, a second adjusting layer and a second substrate, sequentially stacked in the mentioned order. The first and second substrates have a refractive index of n | 09-18-2008 |
20090053616 | HOLOGRAPHIC RECORDING MEDIUM - A holographic recording medium is provided, which includes a recording layer. The recording layer comprises a radical polymeric monomer having an aromatic ring-containing group and a polymeric group, a polymer matrix having the aromatic ring-containing group, and a photo-radical polymerization initiator. | 02-26-2009 |
20090080314 | OPTICAL INFORMATION RECORDING/REPRODUCING APPARATUS AND ITS REPRODUCTION METHOD - An optical recording/reproducing apparatus includes an optical recording medium in which a holograms are recorded depending on an incident angle of a reference beam. The reference beam is irradiated to holograms while changing the incident angle to generate a reproduction light beam, and an image patterns are detected by an image pattern detector. The continuously output reproduction image patterns are temporarily stored in an image recorder, and the maximum value of reproduction light intensity is detected to generate a trigger signal. Depending on the trigger signal, an optimal image pattern is extracted from continuous reproduction image patterns, and thus, two-dimensional data is decoded. | 03-26-2009 |
20090195847 | HOLOGRAPHIC RECORDING MEDIUM - A holographic recording medium is provided, which includes a recording layer containing a three-dimensional crosslinked polymer matrix, a photo-radical generating agent, and a ring-opening polymerizable compound having a radically ring-opening polymerizable alicyclic structure. | 08-06-2009 |
20090231979 | OPTICAL RECORDING MEDIUM - An optical recording medium is provided, which includes a recording layer includes a polymer matrix, a polymerizable compound, a photopolymerization initiator, and a polymerization inhibitor. The polymerization inhibitor is formed of a compound which exhibits a molar absorption coefficient of zero to a light having a first wavelength and generates an acid or a base when exposed to an external stimulus other than the light having the first wavelength, thereby inhibiting the polymerization of the polymerizable compound. | 09-17-2009 |
20120214094 | METHOD OF FORMING PATTERN - According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively. | 08-23-2012 |
20130075360 | METHOD OF FORMING PATTERN - According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern. | 03-28-2013 |
20130078570 | METHOD OF FORMING PATTERN AND LAMINATE - According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer. | 03-28-2013 |