Patent application number | Description | Published |
20090067225 | MODULAR MAGNETORESISTIVE MEMORY - A magnetoresistive memory element has a read module with a first pinned layer that has a magnetoresistance that is readable by a read current received from an external circuit. The element has a write module that receives a write current from the external circuit. A coupling module adjacent both the write module and the read module has a free layer that functions as a shared storage layer for both the read module and the write module. The shared storage layer receives spin torque from both the read module and the write module and has a magnetization that is rotatable by the write current. | 03-12-2009 |
20090109570 | WIRE AND WIRE LEAD DESIGNS FOR A WIRE-ASSISTED MAGNETIC WRITE DEVICE - A magnetic device includes a write element having a write element tip that defines a medium confronting surface. The write element is operable to generate a first field at the medium confronting surface. A conductor is proximate the write element tip and first and second conductive leads are connected to the conductor and configured to deliver a current to the conductor to generate a second field that augments the first field. First and second side elements are disposed on opposite sides of the write element tip in a cross-track direction at the medium confronting surface. At least a portion of the first conductive lead is disposed adjacent the first side element on a side opposite the medium confronting surface, and at least a portion of the second conductive lead is disposed adjacent the second side element on a side opposite the medium confronting surface. | 04-30-2009 |
20090147562 | COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals. | 06-11-2009 |
20090244957 | MULTILEVEL MAGNETIC STORAGE DEVICE - The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits. | 10-01-2009 |
20100149675 | Skip Block Writing For Bit Patterned Media Write Synchronization - A method for synchronizing writing to a bit patterned media includes: reading bits from skipped blocks on the bit patterned media, using timing of bits read from the skipped blocks to update a write clock, and writing request data to physical blocks on the bit patterned media, interleaved with the skipped blocks. An apparatus that operates in accordance with the method is also provided. | 06-17-2010 |
20110007558 | MODULAR MAGNETORESISTIVE MEMORY - A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module. | 01-13-2011 |
20110110147 | COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals. | 05-12-2011 |
20120106240 | COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals. | 05-03-2012 |
20130051135 | COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals. | 02-28-2013 |