Patent application number | Description | Published |
20100182839 | Method of Programming Nonvolatile Memory Device - According to a method of programming a nonvolatile memory device, a program operation is performed on a first page by applying a program pulse to the first page. A verification operation is performed on the program operation by applying a verification voltage to the first page. If the program operation for the first page has not been completed, a voltage selected from threshold voltages of the first page is set as a highest threshold voltage. The program operation for the first page is completed by repeatedly performing a program operation and a verification operation on the first page while a voltage level of the program pulse is increased. The sum of a program start voltage for the first page and a difference between the verification voltage and the highest threshold voltage is set as a program start voltage for a second page. | 07-22-2010 |
20100188903 | METHOD OF OPERATING NONVOLATILE MEMORY DEVICE - A method of operating a nonvolatile memory device includes performing a first program operation and a first verification operation on memory cells until a cell, having a threshold voltage higher than a first reference voltage, occurs and, when a cell having the threshold voltage higher than the first reference voltage occurs, performing a second program operation and performing a second verification operation using a second reference voltage higher than the first reference voltage. | 07-29-2010 |
20100195394 | NONVOLATILE MEMORY DEVICE - A page buffer of a nonvolatile memory device according to the present disclosure comprises a first data latch unit configured to store data for program or program inhibition, a second data latch unit configured to store data for setting threshold voltage states of cells to be programmed, and a 1-bit pass determination unit configured to determine whether a cell to be programmed has been programmed to exceed a verification voltage by grounding or making floating a first verification signal output terminal in response to data set to a first node of the first data latch unit and data applied to a sense node. | 08-05-2010 |
20100195400 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device comprises a page buffer unit, a counter, a program pulse application number storage unit, and a program start voltage setting unit. The page buffer is configured to output a 1-bit pass signal when a cell programmed to exceed a reference voltage, from among target program cells included in a single page, exists. The counter is configured to count a number of program pulses applied to determine a program pulse application number. The program pulse application number storage unit is configured to store a number of program pulses applied until the 1-bit pass signal is received during a program operation for a first page. The program start voltage setting unit is configured to set a program start voltage for a second page based on the stored program pulse application number. | 08-05-2010 |
20100302868 | METHOD OF OPERATING NONVOLATILE MEMORY DEVICE - A method of operating a nonvolatile memory device, including a memory cell array, which further includes a drain select transistor, a memory cell string, and a source select transistor coupled between a bit line and a source line, where the method includes precharging the bit line, setting the memory cell string in a ground voltage state, coupling the memory cell string and the bit line together and supplying a read voltage or a verification voltage to a selected memory cell of the memory cell string, and coupling the memory cell string and the source line together in order to change a voltage level of the bit line in response to a threshold voltage of the selected memory cell. | 12-02-2010 |
20100329014 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING THE SAME - A semiconductor memory device includes a memory cell array including an even page cell group and an odd page cell group, and a page buffer configured to read data stored in memory cells of the even page cell group and the odd page cell group and store the read data. The page buffer comprises a first latch configured to store first even page data of the even page cell group when a first read operation is performed, a second latch configured to store odd page data of the odd page cell group when a second read operation is performed, and a third latch configured to store second even page data of the even page cell group when a third read operation is performed. | 12-30-2010 |
20100329020 | METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE - A method of programming a nonvolatile memory device includes an initial data setting step of inputting data for program inhibition to a first latch of a page buffer to which memory cells to be programmed with a second threshold voltage distribution are coupled, a first program and verification step of performing program and verification operations, a first data setting step of, when a program pulse is supplied more than N times (where N is a natural number), inputting data for performing a program operation to the first latch of the page buffer to which the memory cells to be programmed with the second threshold voltage distribution are coupled, and a second program and verification step of performing program and verification operations. | 12-30-2010 |
20100329028 | METHOD OF PERFORMING PROGRAM VERIFICATION OPERATION USING PAGE BUFFER OF NONVOLATILE MEMORY DEVICE - A method of performing a program verification operation in a nonvolatile memory device includes storing program data, programmed into a selected memory cell of a memory cell block, in a page buffer which is coupled to a bit line of the memory cell block via a sense node, controlling a voltage level of the sense node in response to a value of the program data, changing the voltage level of the sense node in response to a program state of the selected memory cell coupled to the bit line, and performing a program verification operation on the selected memory cell by sensing the voltage level of the sense node. | 12-30-2010 |
20100332736 | METHOD OF OPERATING NONVOLATILE MEMORY DEVICE - A method of programming a nonvolatile memory device comprises storing first data of a first memory block in a page buffer unit, and then programming the first data into a redundant memory block coupled to the page buffer unit, storing second data of a second memory block in the page buffer unit, and then programming the second data into the first memory block, storing third data of a third memory block in the page buffer unit, and then programming the third data into the second memory block, storing the second data of the first memory block in the page buffer unit, and then programming the stored second data into the third memory block, and storing the first data stored in the redundant memory block in the page buffer unit, and then programming the stored first data into the first memory block. | 12-30-2010 |
20110038215 | NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME - A method for operating a non-volatile memory device includes counting the number of consecutive verify operations performed without a precharge, sensing a temperature, and when the number of verify operations exceeds a set value of verify operations, controlling a level of a sensing bias voltage based on the sensed temperature. | 02-17-2011 |
20110249505 | METHOD OF PROGRAMMING A SEMICONDUCTOR MEMORY DEVICE - A method of programming a semiconductor memory device by applying a program voltage to a selected word line in an incremental step pulse program mode includes raising a voltage of precharging a bit line for program inhibition according to an increase in the program voltage applied to the selected word line. | 10-13-2011 |
20110267905 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - A semiconductor memory device, including a temperature detector configured to output a temperature detection signal in response to a temperature detected in a core region which includes a plurality of memory cells, and a programming voltage generator configured to generate a programming voltage in response to the temperature detection signal and output a generated programming voltage to the core region. | 11-03-2011 |
20120163092 | NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - The program method of a nonvolatile memory device includes detecting temperature, setting a step voltage, corresponding to an increment of a program voltage in a program operation of an incremental step pulse program (ISPP) method, wherein the step voltage changes based on the detected temperature, and performing the program operation and a program verification operation based on the set step voltage. | 06-28-2012 |
20120218818 | NONVOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - A nonvolatile memory device includes a page region including a plurality of normal cells and a plurality of auxiliary cells, a detecting unit configured to output a pass signal when at least one cell is programmed with a voltage higher than a reference voltage among program target cells of the page region, a count storing unit configured to store a count in the plurality of auxiliary cells during a first program operation for the page region, wherein the count indicates a total number of program pulses applied to the at least one cell until the pass signal is outputted from the detecting unit, and a voltage setting unit configured to set a program start voltage for a second program operation of the page region based on the count stored in the plurality of auxiliary cells. | 08-30-2012 |
20120269010 | MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node. | 10-25-2012 |
20120269020 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line. | 10-25-2012 |
20140376315 | SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes a memory cell, a page buffer including a first and a second switching devices coupled in common to a sensing node coupled to the memory cell through a bit line and a first and a second sensing latch units coupled to the sensing node, respectively, through the first and the second switching devices, and a control logic suitable for transferring a first and a second sensing signals, respectively, to the first and the second switching devices when a threshold voltage of the memory cell is reflected on the sensing node through the bit line during a verification operation. The first and the second switching devices are turned on or off, respectively, in response to the first and the second sensing signals, and data are sensed by the first and the second sensing latch units. | 12-25-2014 |