Shimabukuro
Atsushi Shimabukuro, Osaka JP
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20100029631 | CARBOXYLIC ACID COMPOUNDS AND MEDICINAL COMPOSITIONS CONTAINING THE SAME AS THE ACTIVE INGREDIENT - A compound represented by formula (I) | 02-04-2010 |
20150218114 | AMINE SALT AND CRYSTALS THEREOF - A compound that can be a therapeutic agent for underactive bladder which has low risk of side effects and can be administered orally is provided. Furthermore, a crystal which is advantageous in view of the stability, long-term storage, handleability, easiness of the drug preparation or the like as a drug substance of medicaments is provided. Since a salt of 2-[(2-{(1R,5R)-2-oxo-5-[(1E,4S)-7,8,8-trifluoro-4-hydroxy-4-methyl-1,7-octadien-1-yl]cyclopentyl}ethyl)thio]-1,3-thiazole-4-carboxylic acid or a diastereomeric mixture thereof and 4-piperidinemethanol is a chemically very stable crystal, it can be stored for a long time, and is very useful as a drug substance of medicaments. | 08-06-2015 |
Hiroshi Shimabukuro, Matsumoto JP
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20080203926 | Load driving circuit, driver IC having a load driving circuit, and plasma display panel having a driver IC - A load driving circuit in which a load is connected to the connecting point of transistors as low-side and high-side main switch elements that have a totem pole structure and are connected between a pair of drive voltage supply lines. A protection circuit section is provided for the high-side transistor. In the protection circuit section, a resistor as a voltage control element is provided for a MOSFET as an overvoltage prevention switch and a capacitor is connected between the gate and the drain of the MOSFET. | 08-28-2008 |
Isao Shimabukuro, Okinawa JP
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20100209527 | COMPOSITION FOR PREVENTION OR TREATMENT OF DISEASE ASSOCIATED WITH PRODUCTION OF AUTOANTIBODY - The invention provides a composition for prevention or treatment of a disease associated with the production of an autoantibody. | 08-19-2010 |
20140030353 | COMPOSITION FOR PREVENTION OR TREATMENT OF DISEASE ASSOCIATED WITH PRODUCTION OF AUTOANTIBODY - The invention provides a composition for prevention or treatment of a disease associated with the production of an autoantibody. | 01-30-2014 |
Riki Shimabukuro, Kyoto JP
Patent application number | Description | Published |
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20120286301 | LED MODULE - An LED (Light Emitting Diode) module includes an LED unit having one or more LED chips and a case. The case includes: a body including a base plate made of ceramic, the base plate having a main surface and a bottom surface opposite to the main surface; a through conductor penetrating through the base plate; and one or more pads formed on the main surface and making conductive connection with the through conductor, the pads mounting thereon the LED unit. The through conductor includes a main surface exposed portion exposed to the main surface and overlapping the LED unit when viewed from top, a bottom surface reaching portion connected to the main surface exposed portion and reaching the bottom surface. The pads cover at least a portion of the main surface exposed portion. | 11-15-2012 |
20150129908 | LED MODULE - An LED (Light Emitting Diode) module includes an LED unit having one or more LED chips and a case. The case includes: a body including a base plate made of ceramic, the base plate having a main surface and a bottom surface opposite to the main surface; a through conductor penetrating through the base plate; and one or more pads formed on the main surface and making conductive connection with the through conductor, the pads mounting thereon the LED unit. The through conductor includes a main surface exposed portion exposed to the main surface and overlapping the LED unit when viewed from top, a bottom surface reaching portion connected to the main surface exposed portion and reaching the bottom surface. The pads cover at least a portion of the main surface exposed portion. | 05-14-2015 |
Seiji Shimabukuro, Yokkaichi JP
Patent application number | Description | Published |
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20130307044 | Selective Air Gap Isolation In Non-Volatile Memory - Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. A blocking layer can be introduced to inhibit the formation of materials in the air gaps during subsequent process steps. The blocking layer may result in selective air gap formation or varying dimension of air gaps at cell areas relative to select gate areas in the memory. The blocking layer may result in a smaller vertical dimension for air gaps formed in the isolation regions at select gate areas relative to cell areas. The blocking layer may inhibit formation of air gaps at the select gate areas in other examples. Selective etching, implanting and different isolation materials may be used to selectively define air gaps. | 11-21-2013 |
20140353738 | FLOATING GATE ULTRAHIGH DENSITY VERTICAL NAND FLASH MEMORY AND METHOD OF MAKING THEREOF - A method of making a monolithic three dimensional NAND string including providing a stack of alternating first material layers and second material layers over a substrate. The first material layers comprise an insulating material and the second material layers comprise sacrificial layers. The method also includes forming a back side opening in the stack, selectively removing the second material layers through the back side opening to form back side recesses between adjacent first material layers and forming a blocking dielectric inside the back side recesses and the back side opening. The blocking dielectric has a clam shaped regions inside the back side recesses. The method also includes forming a plurality of copper control gate electrodes in the respective clam shell shaped regions of the blocking dielectric in the back side recesses. | 12-04-2014 |
20150255619 | Vertical Thin Film Transistor Selection Devices And Methods Of Fabrication - Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and method of fabricating such a memory are described. The vertically-oriented TFT may be used as a vertical bit line selection device to couple a global bit line to a vertical bit line. A select device pillar includes a body and upper and lower source/drain regions. At least one gate is separated horizontally from the select device pillar by a gate dielectric. Beneath each gate, a single gap fill dielectric layer extends vertically from a lower surface of the gate, at least partially separating the gate from the underlying global bit line. Between horizontally adjacent pillars, this same dielectric layer extends from its same lower level beneath the gates vertically to a level of the upper source/drain region. | 09-10-2015 |
20160111439 | BOTTOM RECESS PROCESS FOR AN OUTER BLOCKING DIELECTRIC LAYER INSIDE A MEMORY OPENING - A method of minimizing an overetch or damage to a semiconductor surface underneath a memory opening is provided. A first blocking dielectric layer is formed in a memory opening through a stack of an alternating plurality of material layers and insulator layers. A sacrificial liner is formed over the first blocking dielectric layer. An opening is formed through a horizontal portion of the sacrificial liner. A horizontal portion of the first blocking dielectric layer at a bottom of the memory opening can be etched through the opening in the sacrificial liner. A semiconductor surface of the substrate can be physically exposed at a bottom of the memory opening with minimal overetch and/or surface damage. A second blocking dielectric layer can be formed, before or after formation of the sacrificial liner, to provide a multilayer blocking dielectric. | 04-21-2016 |
Sejei Shimabukuro, Yokkaichi JP
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20160141337 | MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND PARTIALLY DIVIDED BIT LINE SELECTOR SWITCHES - A non-volatile data storage device comprises pairs of immediately adjacent and isolated-from-one-another local bit lines that are independently driven by respective and vertically oriented bit line selector devices. The isolation between the immediately adjacent and isolated-from-one-another local bit lines also isolates from one another respective memory cells of the non-volatile data storage device such that leakage currents cannot flow from memory cells connected to a first of the immediately adjacent and isolated-from-one-another local bit lines to memory cells connected to the second of the pair of immediately adjacent and isolated-from-one-another local bit lines. A method programming a desire one of the memory cells includes applying boosting voltages to word lines adjacent to the bit line of the desired memory cell while not applying boosting voltages to word lines adjacent to the other bit line of the pair. | 05-19-2016 |
Yasushi Richard Shimabukuro, Mission Viejo, CA US
Patent application number | Description | Published |
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20140191098 | ADJUSTABLE MOUNTING ASSEMBLY - An adjustable mounting assembly has first and second mounting portions. The first mounting portion has an engagement arm with an adjustable end having first engagement teeth disposed about a first axis of rotation. The end portion has an adjustable second portion rotatable about the first axis of rotation, and having second engagement teeth that intermesh with the first engagement teeth to retain the second portion in an adjustable pan-position. The second portion has third engagement teeth disposed about a second axis of rotation angularly offset from the first axis of rotation. A second mounting portion is adjustably attached at an attachment portion to the first mounting portion, and the attachment portion has fourth engagement teeth disposed about the second axis of rotation that intermesh with the third engagement teeth to retain the second mounting portion is a selected tilt position. | 07-10-2014 |
20150215690 | ADJUSTABLE MOUNTING ASSEMBLY - An adjustable mounting assembly has first and second mounting portions. The first mounting portion has an engagement arm with an adjustable end having first engagement teeth disposed about a first axis of rotation. The end portion has an adjustable second portion rotatable about the first axis of rotation, and having second engagement teeth that intermesh with the first engagement teeth to retain the second portion in an adjustable pan-position. The second portion has third engagement teeth disposed about a second axis of rotation angularly offset from the first axis of rotation. A second mounting portion is adjustably attached at an attachment portion to the first mounting portion, and the attachment portion has fourth engagement teeth disposed about the second axis of rotation that intermesh with the third engagement teeth to retain the second mounting portion is a selected tilt position. | 07-30-2015 |
Yoshio Shimabukuro, Osaka JP
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20090118179 | Therapeutic Agent for Dentin-Pulp Complex Regeneration - The present invention provides a therapeutic agent for regenerating a dentin-pulp complex, containing a basic fibroblast growth factor and/or a homolog thereof as an active ingredient. The present invention also provides a pulp-capping agent containing a basic fibroblast growth factor and/or a homolog thereof as an active ingredient. | 05-07-2009 |