Patent application number | Description | Published |
20080199983 | METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER - A method of manufacturing semiconductor laser device including a GaN wafer includes forming a semiconductor layer on the GaN wafer and on which ridge portions are formed. Grooves are formed in the semiconductor layer such that each groove is disposed in line with the scribe marks, between each of the ridge portions and an upstream scribe mark. The grooves are curved and convex outwardly towards a downstream side, and each groove has an apex on a cleavage line. The side extending from the apex preferably does not form an angle of 60 degrees with respect to a cleavage direction or the cleavage line. | 08-21-2008 |
20080233668 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device includes: forming a laminated semiconductor structure of GaN-based materials on a semiconductor wafer, the laminated semiconductor structure forming a laser diode of GaN-based materials, including an active layer having a quantum well structure; cleaving the semiconductor wafer including the laminated semiconductor structure to expose a cleaved end face of the laminated semiconductor structure; and forming an SiO | 09-25-2008 |
20080293176 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device includes: forming a first resist pattern on top surface of a laminated semiconductor structure; forming channels and a waveguide ridge by dry etching using the first resist pattern as a mask; forming an SiO | 11-27-2008 |
20090127661 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Semiconductor devices, in particular nitride semiconductor devices for use in the manufacture of laser diodes, prevent peeling-off of the electrode, and at the same time reduces the complexity of processes and a reduction in yield. A nitride semiconductor device according to the invention includes a P-type nitride semiconductor layer with a ridge on its surface, an SiO | 05-21-2009 |
20090130790 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in an ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating. | 05-21-2009 |
20090170225 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening. | 07-02-2009 |
20090184336 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode. | 07-23-2009 |
20100151658 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A method for manufacturing a nitride semiconductor device, comprises epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction. | 06-17-2010 |
20100219382 | COATED CONDUCTIVE POWDER AND CONDUCTIVE ADHESIVE USING THE SAME - The present invention provides a coated conductive powder in which the aggregation of conductive particles is suppressed and which is also excellent in electrical reliability, and a conductive adhesive using the same that can provide connection with high electrical reliability even for the connection of the electrodes of miniaturized electronic parts, such as IC chips, and circuit boards. The coated conductive powder of the present invention is a coated conductive powder obtained by coating the surfaces of conductive particles with insulating inorganic fine particles, wherein the volume resistivity value of the coated conductive powder is 1 Ω·cm or less, the specific gravity of the insulating inorganic fine particles is 5.0 g/ml or less, the particle diameter ratio of the insulating inorganic fine particles to the conductive particles (the insulating inorganic fine particles/the conductive particles) is 1/100 or less, and the insulating inorganic fine particles adhere to the surfaces of the conductive particles. | 09-02-2010 |
20100219438 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode. | 09-02-2010 |
20100221545 | COATED CONDUCTIVE POWDER AND CONDUCTIVE ADHESIVE USING THE SAME - It is an object of the present invention to provide a coated conductive powder particularly useful as the conductive filler of an anisotropic conductive adhesive used for electrically interconnecting circuit boards, circuit parts, and the like, and a conductive adhesive that can provide connection with high electrical reliability even for the connection of the electrodes of miniaturized electronic parts, such as IC chips, and circuit boards. The coated conductive powder of the present invention is a coated conductive powder obtained by coating the surfaces of conductive particles with an insulating substance, wherein the insulating substance is a powdery, thermally latent curing agent. Also, in the present invention, the particle surfaces of the coated conductive powder are further coated with insulating inorganic fine particles. | 09-02-2010 |
20100244074 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light-emitting device and a manufacturing method are provided, in which a metal film is deposited with positional differences between edges of an insulating film and the metal film, opposite a ridge waveguide top face, utilizing an overhanging-shaped resist pattern. An opening through the insulating film is extended in width without another masking step by etching the insulation film on the ridge waveguide top face, using the metal film as a mask. The contact area between a p-side electrode and a p-type contact layer is increased and operating voltage of the semiconductor light-emitting device is reduced. | 09-30-2010 |
20100265702 | MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE - A multi-wavelength semiconductor laser device includes a plate stem; a prism shaped submount with a bottom face on a face of the stem; laser diodes having emission wavelengths different from each other are mounted on lateral sides of the submount so that their respective emission points are positioned at substantially the same distance from a center axis of the stem; and lead pins penetrating the stem are located along and opposite edge lines between adjacent pairs of the lateral sides of the submount. | 10-21-2010 |
20110128986 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device can suppress electrode-to-electrode resonance of laser light emitted from an active layer, increasing electrical conversion efficiency. The semiconductor laser device has a substrate and an active layer. The energy of the laser light emitted from the active layer is smaller than the band gap energy of the substrate, and the carrier concentration of the substrate is at least 2.2×10 | 06-02-2011 |
20110193126 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting element comprises: a semiconductor substrate; a semiconductor laminated structure including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a contact layer that are sequentially laminated on the semiconductor substrate; a ridge portion in an upper portion of the semiconductor laminated structure; a channel portion adjoining opposite sides of the ridge portion; a terrace portion adjoining opposite sides of the channel portion and, with the channel portion, sandwiching the ridge portion; a first insulating film covering the channel portion and having openings on the ridge portion and the terrace portion; a single-layer adhesive layer on the first insulating film; a Pd electrode on the ridge portion and a part of the single-layer adhesive layer and electrically connected to the contact layer of the ridge portion; and a second insulating layer covering a portion not covered by the Pd electrode of the single-layer adhesive layer, and the terrace portion. | 08-11-2011 |
20120066545 | FAULT-TOLERANT SYSTEM AND FAULT-TOLERANT CONTROL METHOD - A fault-tolerant system including a plurality of modules each further including a CPU subsystem, a fault-tolerant control unit, and an I/O subsystem, wherein the fault-tolerant control unit includes a master FT control LSI chip and at least one slave FT control LSI chip. One module is placed in an active state whilst the other module is placed in a standby state, so that I/O requests made by CPU subsystems of these modules are selectively delivered to I/O subsystems based on the master/slave relationship. Upon receiving fault information representing a failed subsystem which is either the CPU subsystem or the I/O subsystem found in the module, the master FT control LSI chip sends a command for controlling isolation of the failed subsystem to the slave FT control LSI chip, so that the slave FT control LSI chip controls isolation of the failed subsystem based on the command. | 03-15-2012 |
20130217157 | METHOD FOR FABRICATING SEMICONDUCTOR LASER - A method for fabricating a semiconductor laser includes: sequentially forming a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a contact layer of the second conductivity type on a semiconductor substrate; forming a promotion film which contacts the contact layer only in a window region proximate an end plane of the semiconductor laser and absorbs group-III atoms from the contact layer to promote generation of group-III vacancies; implanting ions into the contact layer in the window region to damage the contact layer in the window region; and after forming the promotion film and implanting the ions, heat treating so that the group-III vacancies are diffused and the active layer is disordered in the window region and forms a window structure. | 08-22-2013 |
20140089447 | DATA TRANSFER DEVICE - When a checkpoint comes, the control section selects some of a plurality of small areas which are transfer targets in the memory as small areas to be transferred to the outside of the own computer through the save area (indirect transfer small areas), and selects the others as small areas to be transferred to the outside of the own computer not through the save area (direct transfer small areas). Within a period in which updating from the own computer to the memory is suspended, the control section copies stored data in the small areas selected as the indirect transfer small areas from the memory to the save area with use of the copy section, and in parallel to the copying, transfers stored data in the small areas selected as the direct transfer small areas from the memory to the outside of the own computer with use of the communication section. | 03-27-2014 |