Shino
Shino Korah, Austin, TX US
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20130318405 | EARLY FABRIC ERROR FORWARDING - An embodiment includes a processor, included in a first die, detecting a first hardware error (e.g., memory corruption error). The processor formulates a first error message based on the detected first error. The processor may forward the first error message, via a first fabric included on the first die, to a first intellectual property (IP) agent or block, also included in the first die. This may be done using an in-band message, such as one that adheres to the integrated on-chip system fabric (IOSF) specification. The first IP agent may issue an error message that may, for example, alert a user to the error in a manner that is relatively close in time when the error first occurs. This may facilitate better error analysis. The first IP agent may include a processor (e.g., graphics processor), controller (e.g., power management controller), and the like. Other embodiments are described herein. | 11-28-2013 |
Shino Magaki, Redlands, CA US
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20100159486 | BIOMARKERS FOR NEUROLOGICAL CONDITIONS - Low molecular weight (LMW) peptides have been discovered that are indicative of neurological conditions, such as Alzheimer's Disease (AD), cognitive impairment and brain microhemmorhages. Evaluating patient samples for the presence of such LMW peptides is an effective means of detecting neurological conditions and monitoring the progression of the disease. The LMW peptides are particularly useful in detecting neurological conditions during the early stages without invasive procedures. | 06-24-2010 |
Shino Okubo, Kariya-Shi JP
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20110056370 | VARIABLE DISPLACEMENT SWASH PLATE COMPRESSOR - The variable displacement swash plate compressor includes a housing, a drive shaft, a swash plate, a piston, a bleed passage, a supply passage and a low-melting member. The housing has a cylinder bore, a suction chamber, a discharge chamber and a crank chamber. The swash plate is supported in the crank chamber by the drive shaft and inclination angle of the swash plate is adjustable. The piston is reciprocally movably received in the cylinder bore. The bleed passage is formed in the housing in communication with the crank chamber and the suction chamber. The supply passage is formed in the housing in communication with the discharge chamber and the crank chamber. The low-melting member is disposed in the bleed passage so as to restrict fluid flow therethrough and has a lower melting point than the housing. When the low-melting member is melted, an opening of the bleed passage is increased. | 03-10-2011 |
Shino Okubo, Aichi-Ken JP
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20100159271 | SLIDING MEMBER FOR COMPRESSOR - A sliding member for a compressor includes a base metal, a first layer and a second layer. The base metal is made of an aluminum-based metal. The first layer is formed on or over the base metal and made of a nickel-based plating layer containing at least one material of nitrogen (N), silicon (Si), titanium (Ti), chromium (Cr) and aluminum (Al) as an additive. The second layer is formed on the surface of the first layer and made of a diamond-like carbon layer containing the same additive as the additive contained in the first layer. | 06-24-2010 |
Shino Oonichi, Aichi JP
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20100223002 | ROUTE GUIDANCE SYSTEM AND PROGRAM - It is possible to display a lane guide map that takes into consideration connections between each of the lanes (m | 09-02-2010 |
Shino Takahashi, Tokyo JP
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20100019324 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - By ion-implanting an inert gas, for example, nitrogen into a polycrystalline silicon film in an nMIS forming region from an upper surface of the polycrystalline silicon film down to a predetermined depth, an upper portion of the polycrystalline silicon film is converted to an amorphous form to form an amorphous/polycrystalline silicon film. And then, an n-type impurity, for example, phosphorous is ion-implanted into the amorphous/polycrystalline silicon film to form an n-type amorphous/polycrystalline silicon film, the n-type amorphous/polycrystalline silicon film is processed to form a gate electrode having a gate length shorter than 0.1 μm, a sidewall formed of an insulating film is formed on a side wall of the gate electrode, and a source/drain diffusion layer is formed. Thereafter, a cobalt silicide (CoSi | 01-28-2010 |
20110237036 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - By ion-implanting an inert gas, for example, nitrogen into a polycrystalline silicon film in an nMIS forming region from an upper surface of the polycrystalline silicon film down to a predetermined depth, an upper portion of the polycrystalline silicon film is converted to an amorphous form to form an amorphous/polycrystalline silicon film. And then, an n-type impurity, for example, phosphorous is ion-implanted into the amorphous/polycrystalline silicon film to form an n-type amorphous/polycrystalline silicon film, the n-type amorphous/polycrystalline silicon film is processed to form a gate electrode having a gate length shorter than 0.1 μm, a sidewall formed of an insulating film is formed on a side wall of the gate electrode, and a source/drain diffusion layer is formed. Thereafter, a cobalt silicide (CoSi | 09-29-2011 |
Shino Takeda, Chiba-Shi JP
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20090001323 | Method for preparing analytical standard, and analytical standard prepared by the same - There is provided a method for preparing an analytical standard used for microbeam X-ray fluorescence analysis which includes: a mixing step A in which an element is added to a base material, and the base material and the element are mixed by stirring to obtain a mixed solution; a deaeration step B in which the mixed solution is deaerated; a freeze step D in which the mixed solution is slowly frozen; and a cutting step F in which a thin section is cut out from the frozen mixed solution. In order to surely remove bubbles from the mixed solution, the deaeration step B may contain a stationary step in which the mixed solution is allowed to stand still at room temperature; or the stationary step includes a removal step in which gas contained in the mixed solution which is allowed to stand still is removed with a suction apparatus. | 01-01-2009 |
Shino Tanaka, Tokyo JP
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20110164064 | IMAGE PROCESSING DEVICE AND METHOD FOR PROCESSING IMAGE - A medical image processing device | 07-07-2011 |
20110228994 | MEDICAL IMAGE PROCESSING DEVICE AND MEDICAL IMAGE PROCESSING METHOD - There is provided a medical image processing device and a medical image processing method that can extract and display lesion candidate regions having different sizes and similarity forms at a time through a series of processing. Therefore, with respect to a first medical image, a first evaluation for the curved surface form of the first medical image is made to extract first lesion candidate regions. With respect to each of the first lesion candidate regions extracted by a first extracting unit, a second evaluation for the curved surface form thereof is made to extract a second lesion candidate region. The second lesion candidate region extracted by a second extracting unit is superimposed and displayed on a second medical image. | 09-22-2011 |
Shino Tokuyo, Kawasaki JP
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20100210106 | SEMICONDUCTOR DEVICE HAVING A INTERLAYER INSULATION FILM WITH LOW DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH - A method for fabricating a semiconductor includes the steps of forming a porous insulation film and wires on a substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film. | 08-19-2010 |
Shino Tokuyo, Sagamihara JP
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20150245541 | DATA CENTER - A data center includes: a structure provided with an intake port at one side thereof and an exhaust port at the other side thereof; a rack disposed in the structure; an air blower configured to introduce outside air into the structure through the intake port to circulate the outside air from one side to the other side of the rack; a circulation passage configured to make a first space between the one side of the rack and the intake port and a second space between the other side of the rack and the exhaust port communicate with each other; a circulation amount control equipment disposed within the circulation passage; and an air circulation amount control device configured to control the circulation amount control equipment and an operation state of the electronic equipment such that the amount of the air which circulates the circulation passage is adjusted. | 08-27-2015 |