Patent application number | Description | Published |
20100328996 | PHASE CHANGE MEMORY HAVING ONE OR MORE NON-CONSTANT DOPING PROFILES - A phase change memory device with a memory element including a basis phase change material, such as a chalcogenide, and one or more additives, where the additive or additives have a non-constant concentration profile along an inter-electrode current path through a memory element. The use of “non-constant” concentration profiles for additives enables doping the different zones with different materials and concentrations, according to the different crystallographic, thermal and electrical conditions, and different phase transition conditions. | 12-30-2010 |
20110097825 | Methods For Reducing Recrystallization Time for a Phase Change Material - A method for reducing recrystallization time for a phase change material of a memory cell element in conjunction with the manufacture of a memory cell device can be carried out as follows. A phase change material, a buffer layer material and a cladding layer material are selected. The buffer layer material is deposited on the substrate, the phase change material is deposited on the buffer layer, and the cladding layer material is deposited on the phase change material to form a memory cell element. The thickness of the phase change material is preferably less than 30 nm and more preferably less than 10 nm. The recrystallization time of the phase change material of the memory cell element is determined. If the recrystallization time is not less than a length of time X, these steps are repeated while changing at least one of the selected materials and material thicknesses. | 04-28-2011 |
20120193595 | COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS - A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition. | 08-02-2012 |
20130234093 | COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS - A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition. | 09-12-2013 |
20140069577 | Single-Crystal Phase Change Material on Insulator for Reduced Cell Variability - Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a method of fabricating an electronic device is provided which includes the following steps. A single-crystal phase change material is formed on a first substrate. At least one first electrode in contact with a first side of the single-crystal phase change material is formed. The single-crystal phase change material and the at least one first electrode in contact with the first side of the single-crystal phase change material form a transfer structure on the first substrate. The transfer structure is transferred to a second substrate. At least one second electrode in contact with a second side of the single-crystal phase change material is formed. A single-crystal phase change material-containing structure and electronic device are also provided. | 03-13-2014 |
20140070155 | Single-Crystal Phase Change Material on Insulator for Reduced Cell Variability - Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a structure is provided having a substrate; an insulator over the substrate; and a single-crystal phase change material over the insulator. In another aspect, an electronic device is provided having a substrate; an insulator over the substrate; and a single-crystal phase change material over the insulator, wherein the single-crystal phase change material makes up a plurality of cells of the electronic device, each of the cells being configured to have one of two forms: 1) a first form consisting solely of single-crystal phase change material, and 2) a second form consisting of a region of single-crystal phase change material in contact with a region of amorphous phase change material. | 03-13-2014 |
20140151770 | THIN FILM DEPOSITION AND LOGIC DEVICE - A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer. | 06-05-2014 |
20140151771 | THIN FILM DEPOSITION AND LOGIC DEVICE - A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer. | 06-05-2014 |
20150048291 | PHASE CHANGE MEMORY CELL WITH IMPROVED PHASE CHANGE MATERIAL - A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase. | 02-19-2015 |