Patent application number | Description | Published |
20120269967 | Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use - Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described. | 10-25-2012 |
20130019960 | Reactant Delivery System For ALD/CVD Processes - Provided are apparatus and methods for generating a chemical precursor. The apparatus comprises an inlet line to be connected to an ampoule and an outlet line to be connected to an ampoule. The inlet line having an inlet valve to control the flow of a carrier gas into the ampoule and the outlet line has an outlet valve to control the flow exiting the ampoule. A bypass valve allows carrier gas to bypass the ampoule and purge the outlet valve without flowing gas into the ampoule. | 01-24-2013 |
20130143415 | Multi-Component Film Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate. | 06-06-2013 |
20130164445 | Self-Contained Heating Element - Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described. | 06-27-2013 |
20140023794 | Method And Apparatus For Low Temperature ALD Deposition - Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification. | 01-23-2014 |
20150200110 | Self-Aligned Double Patterning With Spatial Atomic Layer Deposition - Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition. | 07-16-2015 |
20150252477 | IN-SITU CARBON AND OXIDE DOPING OF ATOMIC LAYER DEPOSITION SILICON NITRIDE FILMS - Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates. | 09-10-2015 |
20150255324 | SEAMLESS GAP-FILL WITH SPATIAL ATOMIC LAYER DEPOSITION - Embodiments disclosed herein generally relate to forming dielectric materials in high aspect ratio features. In one embodiment, a method for filling high aspect ratio trenches in one processing chamber is disclosed. The method includes placing a substrate inside a processing chamber, where the substrate has a surface having a plurality of high aspect ratio trenches and the surface is facing a gas/plasma distribution assembly. The method further includes performing a sequence of depositing a layer of dielectric material on the surface of the substrate and inside each of the plurality of trenches, where the layer of dielectric material is on a bottom and side walls of each trench, and removing a portion of the layer of dielectric material disposed on the surface of the substrate, where an opening of each trench is widened. The sequence repeats until the trenches are filled seamlessly with the dielectric material. | 09-10-2015 |