Patent application number | Description | Published |
20100083902 | Plasma generating device - A plasma generating device is disclosed, which generates plasma by supplying a bias RF power in the initial state in an inductive coupled plasma (ICP) system. Especially, an insulator which insulates a ground member from a susceptor supplied with the bias RF power is separated into at least two pieces such that the thermal expansion of the insulator can be generated similarly to adjoining parts. | 04-08-2010 |
20100326600 | PLASMA DRY ETCHING APPARATUS HAVING COUPLING RING WITH COOLING AND HEATING UNITS - A plasma dry etching apparatus includes a pedestal in a process chamber, the pedestal being configured to support a wafer, a cathode electrode and a plate electrode in the process chamber, the cathode and plate electrodes being configured to apply radio-frequency (RF) power, an edge ring on an edge of the pedestal, a coupling ring having a first side on the pedestal and a second side on the edge ring, an edge cooling unit in the coupling ring, the edge cooling unit being configured to cool the edge ring to drop a temperature of an extreme edge of the wafer, and an edge heating unit in the coupling ring, the edge heating unit being configured to heat the edge ring to raise the temperature of an extreme edge of the wafer. | 12-30-2010 |
20120098545 | Plasma Diagnostic Apparatus And Method For Controlling The Same - An example embodiment relates to a plasma diagnostic apparatus that exists outside of a plasma generation chamber. The plasma diagnostic apparatus is configured to recognize and/or diagnose a state of plasma using a signal flowing from a floated electrode of a plasma generation apparatus to determine a diagnostic factor of the plasma. | 04-26-2012 |
20150034010 | SUSCEPTOR AND APPARATUS INCLUDING THE SAME - A film deposition apparatus includes a chamber, at least one susceptor disposed inside the chamber and including a seating part, and at least three protrusion parts disposed on the seating part. The seating part is configured to have a wafer seated thereon. The film deposition apparatus further includes a heat source configured to supply heat to the at least one susceptor. The at least three protrusion parts are spaced a distance apart from a center of the at least one susceptor, and the distance is greater than or equal to one third (⅓) of a radius of the wafer seated on the at least one susceptor or greater than or equal to one third (⅓) of a radius of the at least one susceptor. | 02-05-2015 |