Patent application number | Description | Published |
20090126753 | ADHESIVE FOR WIG, WIG USING THE SAME, AND METHODS OF MANUFACTURING THE BOTH - An adhesive for a wig, a wig using the same, and methods of manufacturing the both are such that the adhesive for a wig has a single layer, is bondable unpeelably to the inner side of a wig base, and is bondable by pressure re-peelably to scalp, wherein the adhesive layer ( | 05-21-2009 |
20090165810 | WIG - A hair material for a wig is preliminarily curled and then bound to a wig base to thereby orient the curled hair in a definite direction. A folded part ( | 07-02-2009 |
20090235943 | MOISTURE-PERMEABLE MATERIAL FOR WIGS AND WIG OR UNDER CAP FOR WIG HAVING THE MOISTURE-PERMEABLE MATERIAL - The present invention is to provide a moisture-permeable material for wigs superior in moisture permeability, helping to suppress sweatiness when worn, and allowing easy attachment. A moisture-permeable material for wigs formed in a three-layer structure, including: a core material made of a porous polyurethane; a net layer provided on a side of the core material to be brought into contact with a head and formed of synthetic fibers or natural fibers; and a fiber layer which is laminated on the other side of the core material, which is formed of the synthetic fibers or the natural fibers, and in which artificial hairs or natural hairs are to be planted. | 09-24-2009 |
20100037907 | WIG AND METHOD OF MAKING THE SAME | 02-18-2010 |
20100071714 | WIG AND METHOD OF MAKING THE SAME - A wig base ( | 03-25-2010 |
20100163069 | HAIR-INCREASING DEVICE AND METHOD OF PRODUCING THE SAME - A hair increasing device | 07-01-2010 |
Patent application number | Description | Published |
20090185589 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light. | 07-23-2009 |
20100053970 | LIGHT-EMITTING DEVICE AND ILLUMINATING DEVICE - A light-emitting device includes: a first laser light source; a first diffusion member provided along a light axis of a first light radiated form the first laser light source; and a first wavelength converter provided along the first diffusion member. The first diffusion member generates a second light from the first light. The second light outgoes in a direction different from the light axis direction of the first light. A ratio of generating the second light from the first light in a first part is higher than that in a second part, wherein an intensity of the first light in the first part is lower than that in a second part. The first wavelength converter absorbs the second light and emitting a third light having a different wavelength from the second light. | 03-04-2010 |
20100148203 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer. | 06-17-2010 |
20100246628 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package. | 09-30-2010 |
20110051769 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion | 03-03-2011 |
20110157864 | LIGHT EMITTING DEVICE - According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer. | 06-30-2011 |
20110216554 | LIGHT EMITTING DEVICE - An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component. | 09-08-2011 |
20110216798 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less. | 09-08-2011 |
20110216799 | SEMICONDUCTOR LASER DEVICE - According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe. | 09-08-2011 |
20120007113 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Al | 01-12-2012 |
20120056153 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer. | 03-08-2012 |
20130234155 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a crystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer. | 09-12-2013 |
Patent application number | Description | Published |
20090165564 | SEMICONDUCTOR PRESSURE SENSOR AND DATA PROCESSING DEVICE - For example, to adjust an offset of a pressure sensor, there are provided an external resistor RE and an internal resistor circuit that is connected to both ends of RE and formed in a semiconductor chip such as a processor. The internal resistor circuit includes N pieces of internal resistors RI connected in series between both ends of RE, and (N+1) pieces of switches selecting one of voltages of respective nodes of the serial resistors and outputs the same as a signal. RE has a high absolute value precision of, e.g., several ten ohms to several hundred ohms, and RI has a high relative value precision of, e.g., several kilo-ohms. Therefore, an offset adjustment range is decided at a high absolute value precision mainly by RE, and with regard to the arrangement resolution, a high precision can be obtained along with the relative value precision of the RI. | 07-02-2009 |
20110166804 | SEMICONDUCTOR PRESSURE SENSOR AND DATA PROCESSING DEVICE - For example, to adjust an offset of a pressure sensor, there are provided an external resistor RE and an internal resistor circuit that is connected to both ends of RE and formed in a semiconductor chip such as a processor. The internal resistor circuit includes N pieces of internal resistors RI connected in series between both ends of RE, and (N+1) pieces of switches selecting one of voltages of respective nodes of the serial resistors and outputs the same as a signal. RE has a high absolute value precision of, e.g., several ten ohms to several hundred ohms, and RI has a high relative value precision of, e.g., several kilo-ohms. Therefore, an offset adjustment range is decided at a high absolute value precision mainly by RE, and with regard to the arrangement resolution, a high precision can be obtained along with the relative value precision of the RI. | 07-07-2011 |
20140237110 | SERVER MONITORING - A monitoring device monitors operation states of servers. If information that indicates the operation states is requested from a supervisor terminal, the monitoring device generates display information that allows the supervisor terminal to graphically display the operation states and process commands for the servers and transmits the generated display information to the supervisor terminal. If process commands are transmitted from the supervisor terminal, the monitoring device causes the servers to execute processes based on the transmitted commands. | 08-21-2014 |
Patent application number | Description | Published |
20090104955 | GAME DEVICE - A game device including: a first running surface; a second running surface positioned below the first running surface; a plurality of running objects which run on a track of the second running surface, each of the plurality of running objects including capturing unit for capturing an image; and a plurality of model objects which run on the first running surface following each of the plurality of running objects is provided. The game device further includes: a plurality of two-dimensional codes arranged in an information arrangement surface extending in parallel to the second running surface and capturable from the capturing units with sizes and a sequence in which one or more of the plurality of two-dimensional codes are always included in a field angle of the capturing unit of each of the plurality of running objects disposed in optional positions on the track of the second running surface; and a position detection unit for detecting positions of the plurality of running objects based on positional information recorded in the two-dimensional codes captured by the capturing unit. Thus, costs for position detection of the model objects in the game device in which the plurality of model objects run are reduced, accuracy of the position detection is enhanced, and time period required for the position detection is shortened. | 04-23-2009 |
20140349730 | Game Apparatus and Computer-Readable Recording Medium - A game apparatus comprises operation accepting means that accepts a bet by a player on a betting target among a plurality of betting targets for each of which odds indicating a winning allotment in a first game are set; drawing means that conducts a drawing for the first game; allotment means that pays out a game medium in accordance with a drawing result of the drawing means; storage means that holds a set payout ratio targeted by the game apparatus; stake calculation means that calculates a stake for a second game whose payout ratio is 1, taking into account, along with a number of bet game media, a difference between a position payout ratio, which serves as a winning allotment expectation value per unit of game media, for the betting target bet on by the player, and a set payout ratio held by the storage means; stake accumulation means that accumulates a stake calculated by the stake calculation means; and second game execution means that, if a predetermined condition is satisfied, executes the second game based on a stake accumulated in the stake accumulation means. | 11-27-2014 |
Patent application number | Description | Published |
20100324458 | Ultrasound treatment system - An ultrasound treatment system comprises an ultrasonic transducer, a handpiece, a probe, a sheath, a clamping member, an operation unit, an operating member, a suction base, and a perfusion base. The ultrasonic transducer generates ultrasonic vibrations. The handpiece has the ultrasonic transducer incorporated therein. The probe is connected to the ultrasonic transducer for transmitting ultrasonic vibrations to a distal member realizing a stationary portion that is a treatment portion for treating a living tissue. The sheath serves as a protecting member for shielding the probe. The clamping member is opposed to the distal member at the distal end of the sheath for clamping a living tissue in cooperation with the distal member. The operation unit is manipulated for clamping a living tissue with the clamping member and distal member or freeing the living tissue therefrom. | 12-23-2010 |
20110004127 | Ultrasound treatment system - An ultrasound treatment system comprises an ultrasonic transducer, a handpiece, a probe, a sheath, a clamping member, an operation unit, an operating member, a suction base, and a perfusion base. The ultrasonic transducer generates ultrasonic vibrations. The handpiece has the ultrasonic transducer incorporated therein. The probe is connected to the ultrasonic transducer for transmitting ultrasonic vibrations to a distal member realizing a stationary portion that is a treatment portion for treating a living tissue. The sheath serves as a protecting member for shielding the probe. The clamping member is opposed to the distal member at the distal end of the sheath for clamping a living tissue in cooperation with the distal member. The operation unit is manipulated for clamping a living tissue with the clamping member and distal member or freeing the living tissue therefrom. | 01-06-2011 |
Patent application number | Description | Published |
20090041155 | Stream Distribution System - Provided is a stream distribution system, including: a content server device for performing content distribution in a network; a reception terminal device capable of reproducing a content having a specific format; a plurality of transcoder devices provided in the network, for applying format conversion to a content distributed in the network; and a transcoder management device for searching, in response to a search request sent from the reception terminal device, information on the plurality of transcoder devices, and sending to the reception terminal device, as a search result, a transmission path which runs from the content server device to the reception terminal device via at least one of the plurality of transcoder devices, through which format conversion to a desired content can be performed. | 02-12-2009 |
20090077588 | DEVICE FOR SENDING-OUT DATA IN WHICH ASSOCIATED DATA IS MULTIPLEXED WITH MAIN DATA - A table creating unit receives program information and an upper limit bit rate of EPG data, creates a table of EIT [current/net] on the basis of the information and upper limit bit rate, and determines the frequency of transmission of the table in consideration of the upper limit bit rate and the lower limit of the frequency of transmission of the table. A stream transmitting unit receives the table and the frequency of transmission, converts the table to stream information, and transmits a stream at a frequency determined based on the transmission frequency. Therefore, data transmission is carried out satisfying both the limit of the upper limit bit rate and the limit on the transmission frequency. | 03-19-2009 |
20120030715 | DEVICE FOR SENDING-OUT DATA IN WHICH ASSOCIATED DATA IS MULTIPLEXED WITH MAIN DATA - A table creating unit receives program information and an upper limit bit rate of EPG data, creates a table of EIT [current/net] on the basis of the information and upper limit bit rate, and determines the frequency of transmission of the table in consideration of the upper limit bit rate and the lower limit of the frequency of transmission of the table. A stream transmitting unit receives the table and the frequency of transmission, converts the table to stream information, and transmits a stream at a frequency determined based on the transmission frequency. Therefore, data transmission is carried out satisfying both the limit of the upper limit bit rate and the limit on the transmission frequency. | 02-02-2012 |
Patent application number | Description | Published |
20080213610 | Method of manufacturing iron member - An iron member having a coating film on at least part of its surface is manufactured by a step of projecting zinc particles to the surface of a base material made of an iron material to form a base film, and a step of forming a coating film of resin coating material on at least a part of the base film. | 09-04-2008 |
20140060704 | MANUFACTURING METHOD OF CAST-IRON FRICTION MEMBER - A cast-iron friction member is manufactured by: performing a nitrocarburizing treatment on a cast workpiece at a treatment temperature of 500° C. to 600° C. to thus form a nitrogen compound layer on a surface of the workpiece; and exposing the workpiece to an atmosphere when a temperature becomes 400° C. to 480° C. after the nitrocarburizing treatment so as to cool the workpiece to a room temperature while keeping a contact state with oxygen to thus form an iron oxide layer including Fe | 03-06-2014 |
20140060983 | VEHICULAR DISC BRAKE ROTOR AND MANUFACTURING METHOD OF VEHICULAR DISC BRAKE ROTOR - A vehicular disc brake rotor is provided with a cast-iron base, a nitrogen diffusion layer formed on the cast-iron base, a nitrogen compound layer formed on the nitrogen diffusion layer, and an iron oxide layer including Fe | 03-06-2014 |
20150287753 | FRICTION MATERIAL - The problem addressed by the present invention is to provide a friction material, which does not contain a copper component or a metal fiber, has stable friction characteristics, has superior wear resistance, and has a low aggressiveness with respect to a partner material. The friction material does not contain a metal fiber or a copper component, and contains 10-35 vol % of potassium titanate, which has a plurality of convex shapes; 3-10 vol of an abrasive material having a Mohs hardness of at least 7, and 10-30 vol % of an elastomer-modified phenyl resin. | 10-08-2015 |
20150369320 | FRICTION MATERIAL - A friction material includes a fiber base material, a friction modifier and a binder. The friction modifier includes two or more kinds of non-whisker-like titanate compounds. The non-whisker-like titanate compound includes non-whisker-like lithium potassium titanate. The friction material includes no copper component. Alternatively, a friction material includes a fiber base material, a friction modifier and a binder. The friction material includes a non-whisker-like titanate compound and a low-melting-point metal fiber. The friction material includes no copper component. | 12-24-2015 |