Patent application number | Description | Published |
20130025794 | MANUFACTURING APPARATUS FOR PROTECTION SLEEVE - A protection sleeve includes a heat shrinkable tube and an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube. The heat shrinkable tube, the adhesive tube, and the reinforcing rod are adhered together in a section spanning across a lengthwise section of the heat shrinkable tube. A protection sleeve manufacturing apparatus includes a jig for securing protection sleeves and a heating device. The jig is contrived to hold a plurality of protection sleeves (each including a heat shrinkable tube, an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube) in a parallel arrangement with spaces in-between. The heating device includes a plurality of hot air vents, means for setting a first distance between the jig and the hot air vents, and means for setting the jig and the hot air vents to a second distance that is closer than the first distance. | 01-31-2013 |
20130032273 | METHOD FOR MANUFACTURING PROTECTION SLEEVES - A protection sleeve includes a heat shrinkable tube and an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube. The heat shrinkable tube, the adhesive tube, and the reinforcing rod are adhered together in a section spanning across a lengthwise section of the heat shrinkable tube. A protection sleeve manufacturing apparatus includes a jig for securing protection sleeves and a heating device. The jig is contrived to hold a plurality of protection sleeves (each including a heat shrinkable tube, an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube) in a parallel arrangement with spaces in-between. The heating device includes a plurality of hot air vents, means for setting a first distance between the jig and the hot air vents, and means for setting the jig and the hot air vents to a second distance that is closer than the first distance. | 02-07-2013 |
20130062117 | TERMINAL CONNECTOR AND ELECTRIC WIRE WITH TERMINAL CONNECTOR - An electric wire with a terminal connector includes an electric wire and a female terminal connector crimped onto a core wire exposed at the electric wire. A female terminal connector has a wire barrel having a surface to be applied to the core wire. The surface has a plurality of recesses formed therein. Each recess has an opening edge. The opening edge of the recess includes first opening edges that are parallel to each other. The first opening edges are arranged to overlap with each other in the extending direction of the electric wire so that the first opening edges are present over the entire length of all over the plurality of the recesses on the crimping portion in the extending direction of the electric wire. | 03-14-2013 |
20130075023 | METHOD FOR BONDING THIN FILM PIECE - A method for bonding a thin film piece includes: forming a support layer on each upper face of a plurality of thin film pieces; fixing the plurality of thin film pieces to a first substrate through a temporary fixing layer provided on a lower face of the first substrate so that the temporary fixing layer contacts with the upper face and at least a part of a side face of each support layer; bonding a lower face of the plurality of thin film pieces to a second substrate; and removing the first substrate from the plurality of thin film pieces by removing at least one of the support layer and the temporary fixing layer. | 03-28-2013 |
20130075753 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a substrate comprised of gallium nitride; an active layer provided on the substrate; a first buffer layer that is provided between the substrate and the active layer and is comprised of indium aluminum nitride (In | 03-28-2013 |
20130075867 | METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE - There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains. | 03-28-2013 |
20130092617 | WATER TREATMENT UNIT AND WATER TREATMENT APPARATUS - A water treatment unit is usable in a water treatment apparatus that performs water treatment using a reverse osmosis membrane. The water treatment unit includes: a casing; a separation membrane mounted in the casing and bent into a pleated shape; a reinforcing member attached to the separation membrane and having a function of reinforcing the separation membrane; a rotating mechanism rotating the separation membrane; and a cleaning device capable of cleaning the separation membrane. The separation membrane has a plurality of island-like portions and a plurality of fiber-like portions extending from the island-like portions and having a width smaller than that of the island-like portions, and an area of the fiber-like portions at a membrane surface is set to be larger than that of the island-like portions. | 04-18-2013 |
20130092618 | SEPARATION MEMBRANE, WATER TREATMENT UNIT AND WATER TREATMENT APPARATUS - A separation membrane is usable in a water treatment apparatus that performs water treatment using a reverse osmosis membrane. The separation membrane includes a plurality of island-like portions and a plurality of fiber-like portions extending from the island-like portions and having a width smaller than that of the island-like portions, and an area of the fiber-like portions at a membrane surface is set to be larger than that of the island-like portions. A water treatment unit includes: a casing; the aforementioned separation membrane mounted in the casing; and a cleaning device attached to the casing and capable of cleaning the separation membrane. The water treatment apparatus includes: a first water treatment unit capable of performing pretreatment of water to be treated; and a second water treatment unit capable of performing main treatment of the water to be treated. The first water treatment unit includes the aforementioned water treatment unit. | 04-18-2013 |
20130092956 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - Single crystal substrates are made of silicon carbide, and each have a first front-side surface and a first backside surface opposite to each other. A support substrate has a second front-side surface and a second backside surface opposite to each other. A connection layer has silicon carbide as a main component, and lies between the single crystal substrates and the support substrate for connecting each of the first backside surfaces and the second front-side surface such that each of the first backside surfaces faces the second front-side surface. | 04-18-2013 |
20130095285 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME - A silicon carbide substrate and a silicon carbide ingot excellent in uniformity in characteristics, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 20° C./cm or more. | 04-18-2013 |
20130099252 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot composed of single crystal silicon carbide, obtaining a silicon carbide substrate by slicing the ingot, and polishing a surface of the silicon carbide substrate. In the step of obtaining a silicon carbide substrate, the ingot is sliced such that cutting proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction is 15±5° in an orthogonal projection on a {0001} plane. In the step of polishing a surface of the silicon carbide substrate, at least one of main surfaces of the silicon carbide substrate is polished while the entire surface of at least one of the main surfaces of the silicon carbide substrate is in contact with a polishing surface. | 04-25-2013 |
20130121699 | PON SYSTEM AND TERMINAL OPERATION REGISTERING METHOD - In a PON system in which communication is performed at a plurality of types of transmission rate (L, M, and H) in an upstream direction from a plurality of terminals connected to a station apparatus through optical fibers, within a discovery period for allowing an unregistered terminal to be recognized by station apparatus, the terminal makes a discovery response at one type of transmission rate (L). With this configuration, station apparatus can wait for a discovery response with a receive function being allowed to support transmission rate (L). | 05-16-2013 |
20130121873 | METHOD FOR PRODUCING ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - An object is to provide a method for producing an aluminum structure using a porous resin body having a three-dimensional network structure, with which an aluminum structure having a low impurity content can be formed, and in particular, a porous aluminum body having a large area can be obtained. | 05-16-2013 |
20130122375 | POROUS METAL BODY, AND ELECTRODE MATERIAL AND BATTERY BOTH INCORPORATING THE BODY - The invention offers a porous metal body that has a three-dimensional network structure, that has less reduction in performance during the pressing and compressing steps when an electrode material is produced, and that can be used as an electrode material capable of achieving good electric properties, a method of producing the porous metal body, and an electrode material and a battery both incorporating the foregoing porous metal body. A porous metal body has a skeleton structure that is formed of a metal layer, that has a three-dimensional network structure, and that has an end portion provided with a nearly spherical portion. It is desirable that the metal be aluminum and that the nearly spherical portion have a diameter larger than the outer diameter of the skeleton structure. | 05-16-2013 |
20130122696 | METHOD OF MANUFACTURING SCHOTTKY BARRIER DIODE - A silicon carbide substrate having a main face is prepared. By applying thermal oxidation to the main face of the silicon carbide substrate at a first temperature, an oxide film is formed on the main face. After the oxide film is formed, heat treatment is applied to the silicon carbide substrate at a second temperature higher than the first temperature. An opening exposing a portion of the main face is formed at the oxide film. A Schottky electrode is formed on the main face exposed by the opening. | 05-16-2013 |
20130126231 | ALUMINUM ALLOY WIRE - An aluminum alloy, an aluminum alloy wire, an aluminum alloy stranded wire, a covered electric wire, and a wire harness that are of high toughness and high electrical conductivity, and a method of manufacturing an aluminum alloy wire are provided. The aluminum alloy wire contains not less than 0.005% and not more than 2.2% by mass of Fe, and a remainder including Al and an impurity. It may further contain not less than 0.005% and not more than 1.0% by mass in total of at least one additive element selected from Mg, Si, Cu, Zn, Ni, Mn, Ag, Cr, and Zr. The Al alloy wire has an electrical conductivity of not less than 58% IACS and an elongation of not less than 10%. The Al alloy wire is manufactured through the successive steps of casting, rolling, wiredrawing, and softening treatment. The softening treatment can be performed to provide an excellent toughness such as elongation and impact resistance and thereby reduce fracture of the electric wire in the vicinity of a terminal portion when the wire harness is installed. | 05-23-2013 |
20130129277 | INTEGRATED SEMICONDUCTOR DEVICE - An integrated semiconductor device includes a substrate including a first portion, a second portion, and a third portion; a first waveguide provided on the first portion, the first waveguide including a base portion and a ridge portion provided on the base portion, the base portion containing a first core layer; a second waveguide provided on the second portion, the second waveguide including a first stripe-shaped mesa containing a second core layer; and a third waveguide provided on the third portion, the third waveguide including a second stripe-shaped mesa containing a third core layer. The first stripe-shaped mesa is connected to the base portion and the ridge portion. The first stripe-shaped mesa is connected to the second stripe-shaped mesa. The second core layer is formed integrally with the first core layer. The third core layer is joined to the second core layer by a butt-joint method. | 05-23-2013 |
20130129278 | INTEGRATED SEMICONDUCTOR DEVICE - An integrated semiconductor device includes a substrate including first, second and third portions; a first waveguide provided on the first portion, the first waveguide including a first base portion containing a first core layer, and a first ridge portion provided on the first base portion; a second waveguide provided on the second portion, the second waveguide including a second base portion containing a second core layer and a second ridge portion provided on the second base portion; and a third waveguide provided on the third portion, the third waveguide including a stripe-shaped mesa containing a third core layer. The second base portion is connected to the first base portion. The second ridge portion is connected to the first ridge portion and the stripe-shaped mesa. The second core layer is formed integrally with the third core layer and is joined to the first core layer by a butt-joint method. | 05-23-2013 |
20130129292 | BI-DIRECTIONAL OPTICAL COMMUNICATION METHOD AND MULTI-CORE OPTICAL FIBER - The present invention relates to a multi-core optical fiber applicable to an optical transmission line of bi-directional optical communication and a bi-directional optical communication method. The multi-core optical fiber has plural cores in a common cladding. Signal light is transmitted in a first direction through an arbitrary core among the cores, whereas the signal light is transmitted in a second direction opposite to a first direction, through all the nearest-neighbor cores to the arbitrary core. | 05-23-2013 |
20130132632 | OPTICAL TRANSCEIVER HAVING RESET SEQUENCE - An electronic apparatus is disclosed where the apparatus provides the I2C bus and enables to resume the I2C bus even after the apparatus receives external RESET independent of the status of the I2C communication. A circuit unit communicating with the controller by the I2C bus, which is necessary to be reset, is further coupled with the controller by an internal RESET. The controller, receiving the external RESET, first completes the communication on the I2C bus, then sends the internal RESET to the circuit unit, finally resets itself. | 05-23-2013 |
20130136458 | OPTICAL TRANSCEIVER HAVING ENHANCED EMI TOLERANCE - An optical transceiver that attenuates the EMI radiation leaked therefrom is disclosed. The optical transceiver includes a top cover and the bottom base to form a cavity into which a TOSA, a ROSA, and a circuit are set. At least one of the top cover and the bottom base provides a combed structure in a rear portion of the optical transceiver, where the combed structure has a plurality of T-shaped fins to attenuate the EMI radiation. | 05-30-2013 |
20130137198 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a silicon carbide substrate having a first main surface and a second main surface. On the first main surface, an electrode is formed. The silicon carbide substrate has a hexagonal crystal structure. The first main surface has an off angle of ±8° or smaller relative to a {0001} plane. The first main surface has such a property that when irradiated with excitation light having energy equal to or greater than a band gap of silicon carbide, luminous regions in a wavelength range of 750 nm or greater are generated in the first main surface at a density of 1×10 | 05-30-2013 |
20130142487 | MULTI-CORE OPTICAL FIBER INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING MULTI-CORE OPTICAL FIBER INTERCONNECTION STRUCTURE - A multi-core optical fiber interconnection structure has a first multi-core optical fiber with a slanted end face and a second multi-core optical fiber with a slanted end face. In a state in which the slanted end faces face each other, each of cores of the first multi-core optical fiber is optically coupled to a corresponding one of cores of the second multi-core optical fiber in a one-to-one correspondence relation. The facing condition between the slanted end faces is adjusted so as to minimize variation in core pitches of pairs of the cores each in the one-to-one correspondence relation. | 06-06-2013 |
20130142522 | DIFFERENTIAL CIRCUIT COMPENSATED WITH SELF-HEATING EFFECT OF ACTIVE DEVICE - A differential circuit with a function to compensate unevenness observed in the differential gain thereof is disclosed. The differential circuit provides a low-pass filter in one of the paired transistors not receiving the input signal in addition to another low-pass filter that provides an average of output signals as a reference level of the differential circuit. The cut-off frequency of the filter is preferably set to be equal to the transition frequency at which the self-heating effect explicitly influences the trans-conductance of the transistor. | 06-06-2013 |
20130148265 | ELECTRODE FOR ELECTRIC STORAGE DEVICE, ELECTRIC STORAGE DEVICE AND MANUFACTURING METHOD OF ELECTRODE FOR ELECTRIC STORAGE DEVICE - An electrode for an electric storage device includes at least an active material selected from the group consisting of a carbon nanotube, activated carbon, hard carbon, graphite, graphene and a carbon nanohorn; an ionic liquid; and a three-dimensional network metal porous body. | 06-13-2013 |
20130148676 | WAVELENGTH MONITOR, WAVELENGTH LOCKABLE LASER DIODE AND METHOD FOR LOCKING EMISSION WAVELENGTH OF LASER DIODE - A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each having a periodic transmission spectrum but a period between nearest neighbor periods is different from the other. A transmittance of the first filter and another transmittance of the second filter at a grid wavelength attributed to the WDM system forms a combination which is specific to the grid wavelength but different from other combinations at other grid wavelengths. | 06-13-2013 |
20130148681 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE - There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; and cutting, along the scribe line, the production substrate in which the cutting guide groove is formed. | 06-13-2013 |
20130148934 | OPTICAL FIBER, OPTICAL TRANSMISSION SYSTEM, AND METHOD OF MAKING OPTICAL FIBER - Provided is an inexpensive low-loss optical fiber suitably used in an optical transmission network. An optical fiber includes a core, an optical cladding, and a jacket. The core has a relative refractive index difference between 0.2% and 0.32% and has a refractive index volume between 9%·μm | 06-13-2013 |
20130156060 | LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE - A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface. | 06-20-2013 |
20130161646 | SEMICONDUCTOR SUBSTRATE - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 | 06-27-2013 |
20130161647 | INGOT, SUBSTRATE, AND SUBSTRATE GROUP - An ingot, a substrate, and a substrate group are obtained each of which is made of silicon carbide and is capable of suppressing variation of characteristics of semiconductor devices. The ingot is made of single-crystal silicon carbide, and has p type impurity. The ingot has a thickness of 10 mm or greater in a growth direction thereof. Further, the ingot has an average carrier density of 1×10 | 06-27-2013 |
20130163935 | CONNECTOR-INCORPORATED MULTI-CORE OPTICAL FIBER - The present invention relates to a connector-incorporated multi-core optical fiber with a high optical transmission spatial density and with an excellent bending property. An intermediate region of a fiber body of the connector-incorporated multi-core optical fiber is a region located between bundle sections in which a plurality of optical fibers are integrated by a coupling material, and the coupling material is removed in part from this intermediate region, thereby to expose parts of the respective optical fibers located in the intermediate region. | 06-27-2013 |
20130170804 | MULTI-CORE OPTICAL FIBER - The present invention relates to a multi-core optical fiber that can realize suppression of crosstalk on an easy and inexpensive basis. The multi-core optical fiber is provided with a plurality of core portions extending along a central axis of the fiber, a common cladding portion integrally holding the core portions inside, a coating layer surrounding the common cladding portion, and a bend applying portion. The bend applying portion, as an example, is provided on a partial region of an outer periphery of the coating layer and applies bending stress to a glass region. | 07-04-2013 |
20130177037 | SEMICONDUCTOR INTEGRATED DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material. | 07-11-2013 |
20130180777 | WIRE HARNESS AND WIRE FITTING - A wire harness including a wire fitting is provided that maintains the length of the portion of the wire bundle that extends to the outside of the wire fitting reliably at a tolerance range without impeding the freedom of bending the wire bundle. A wire harness includes a wire fitting having a base and a cover covering a portion of a wire bundle together with the base. The base is provided with a protrusion that pierces the insulated wires at a portion further to an outer edge of the base than a portion of the wire bundle that is tied together by a first tie member, the wire bundle extending from the base to an outside of the base. | 07-18-2013 |
20130182733 | WAVEGUIDE-TYPE OPTICAL SEMICONDUCTOR DEVICE - A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction. | 07-18-2013 |
20130182736 | QUANTUM CASCADE LASER - A quantum cascade laser includes a substrate having a conductivity type, substrate having a first region, a second region, and a third region; a semiconductor lamination provided on a principal surface of the substrate, the semiconductor lamination including a mesa stripe section provided on the second region, an upper cladding layer having the same conductivity type as the substrate, a first burying layer, and a second burying layer, the mesa stripe section including a core layer; and an electrode provided on the semiconductor lamination. The first and second burying layers are provided on the first and third regions and on both side faces of the mesa stripe section. The upper cladding layer is provided on the mesa stripe section, the first burying layer, and the second burying layer. The first and second burying layers include a first and second semi-insulating semiconductor regions comprised of a semi-insulating semiconductor material. | 07-18-2013 |
20130182992 | METHOD TO DRIVE SEMICONDUCTOR MACH-ZEHNDER MODULATOR - A Mach-Zehnder (MZ) modulator made of semiconductor material and a method to drive the MZ-modulator are disclosed. The MZ-modulator includes a pair of arms to vary the phase of the optical beam propagating therein. One of the arms further provides the phase presetter that varies the phase of the optical beam by π. The arms are driven by modulation signals complementary to each other but with the DC bias equal to each other. | 07-18-2013 |
20130183033 | OPTICAL TRANSMISSION SYSTEM - The present invention relates to an optical transmission system to which a spatial multiplexing optical fiber is applied as a transmission line. The optical transmission system performs optical transmission using the spatial multiplexing optical fiber as an optical transmission line for transmission of signal light. Namely, the optical transmission is carried out in accordance with a modulation format in which a Q-factor of the signal light propagating in certain propagation mode light propagating in the spatial multiplexing optical fiber and a ratio of a signal light power to a square of the shortest distance between modulation symbols in the modulation format satisfy a predetermined relational expression. | 07-18-2013 |
20130183780 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes a first etching step of etching a stacked semiconductor layer with a first mask to form a stripe-shaped optical waveguide, the stripe-shaped optical waveguide including first and second stripe-shaped optical waveguides formed on first and second regions of a substrate, respectively; a step of forming a second mask on the stacked semiconductor layer with the first mask left; and a second etching step of etching the stacked semiconductor layer on the first region with the first and second masks. The second mask has a pattern for forming a mesa structure and includes an opening including first and second opening edges remote from side surfaces of the first stripe-shaped optical waveguide. The mesa structure is formed of the first stripe-shaped optical waveguide in the second etching step. The second stripe-shaped optical waveguide formed in the first etching step has a ridge structure. | 07-18-2013 |
20130183783 | METHOD FOR PRODUCING INTEGRATED OPTICAL DEVICE - A method for producing an integrated optical device includes the steps of preparing a substrate including first and second regions; growing, on the substrate, a first stacked semiconductor layer including a first optical waveguiding layer, first and second cladding layers, and a first etch-stop layer between the first and second cladding layers; etching the first stacked semiconductor layer through a first etching mask formed on the first region; selectively growing, on the second region through the first etching mask, a second stacked semiconductor layer, third and fourth cladding layers, and a second etch-stop layer between the third and fourth cladding layers; and forming a ridge structure by etching the second and fourth cladding layers. The step of etching the first stacked semiconductor layer includes a step of forming a first overhang between the first and second cladding layers by selectively etching the first etch-stop layer by wet etching. | 07-18-2013 |
20130183784 | METHOD FOR PRODUCING INTEGRATED OPTICAL DEVICE - A method for producing an integrated optical device includes the steps of growing, on a substrate including first and second regions, a first stacked semiconductor layer, a first cladding layer, and a side-etching layer; etching the first stacked semiconductor layer through a first etching mask formed on the first region; selectively growing, on the second region, a second stacked semiconductor layer and a second cladding layer; growing a third cladding layer and a contact layer on the first and second stacked semiconductor layers; and forming a ridge structure. The step of etching the first stacked semiconductor layer includes a step of forming an overhang between the first cladding layer and the first etching mask. The step of forming a ridge structure includes first, second, and third wet-etching steps in which the third cladding layer, the side-etching layer and the first and second cladding layers are selectively etched, respectively. | 07-18-2013 |
20130183813 | METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method for manufacturing an optical semiconductor device includes a step of forming a stacked semiconductor layer on a substrate, the stacked semiconductor layer including a plurality of semiconductor layers; a step of forming a mask on a top layer of the stacked semiconductor layer, the mask covering a portion of the top layer; an exposing step of exposing the top layer of the stacked semiconductor layer to an oxygen-containing atmosphere; after the exposing step, a heating step of heating the stacked semiconductor layer to a temperature of 250° C. or more; and after the heating step, a step of forming a semiconductor mesa in the stacked semiconductor layer, the semiconductor mesa being formed by etching the stacked semiconductor layer by a dry etching method using the mask. The top layer of the plurality of semiconductor layers of the stacked semiconductor layer contains arsenic. | 07-18-2013 |
20130188917 | OPTICAL FIBER AND OPTICAL FIBER PREFORM - An optical fiber containing an alkali metal element and exhibiting low attenuation as well as excellent radiation resistance is provided. The optical fiber of the present invention has a core region and a cladding region enclosing the core region. The core region contains alkali metal elements by an average concentration of 0.2 atomic ppm or more. The attenuation at a wavelength of 1550 nm after irradiating with the radiation of 0.10 Gy or more of cumulative absorbed dose increases by 0.02 dB/km or less as compared with the attenuation exhibited prior to radiation exposure. | 07-25-2013 |
20130195411 | MULTI-CORE OPTICAL FIBER - A multi-core optical fiber | 08-01-2013 |