Patent application number | Description | Published |
20100283096 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment. | 11-11-2010 |
20110045666 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer. | 02-24-2011 |
20120170371 | PROGRAMMING METHOD OF NON-VOLATILE MEMORY DEVICE - A programming method of a non-volatile memory device that includes a string of memory cells with a plurality of floating gates and a plurality of control gates disposed alternately, wherein each of the memory cells includes one floating gate and two control gates disposed adjacent to the floating gate and two neighboring memory cells share one control gate. The programming method includes applying a first program voltage to a first control gate of a selected memory cell and a second program voltage that is higher than the first program voltage to a second control gate of the selected memory cell, and applying a first pass voltage to a third control gate disposed adjacent to the first control gate and a second pass voltage that is lower than the first pass voltage to a fourth control gate disposed adjacent to the second control gate. | 07-05-2012 |
20120213009 | NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF - A nonvolatile memory device includes a channel vertically extending from a substrate, a plurality of memory cells stacked along the channel; a source region connected to a first end portion of the channel, and a bit line connected to a second end portion of the channel, wherein the first end portion of the channel that adjoins the source region is formed as an undoped semiconductor layer or a semiconductor layer doped with P-type impurities. | 08-23-2012 |
20130099304 | 3-DIMENSIONAL NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another. | 04-25-2013 |
20130161726 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes a channel layer vertically extending from a substrate, a plurality of inter-layer dielectric layers and a plurality of gate electrodes that are alternately stacked along the channel layer, and an air gap interposed between the channel layer and each of the plurality of gate electrodes. The non-volatile memory device may improve erase operation characteristics by suppressing back tunneling of electrons by substituting a charge blocking layer interposed between a gate electrode and a charge storage layer with an air gap, and a method for fabricating the non-volatile memory device. | 06-27-2013 |
20130168752 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes a substrate including a surface, a channel layer formed on the surface of the substrate, which protrudes perpendicularly from the surface, and a plurality of interlayer dielectric layers and a plurality of gate electrode layers alternately stacked along the channel layer, wherein the plurality of gate electrode layers protrude from the plurality of interlayer dielectric layers. | 07-04-2013 |
20130264629 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes a substrate; a channel layer projecting from a surface of the substrate, in a direction perpendicular to the surface; a tunnel dielectric layer surrounding the channel layer; a plurality of interlayer dielectric layers and a plurality of control gate electrodes alternately formed along the channel layer; floating gate electrodes interposed between the tunnel dielectric layer and the plurality of control gate electrodes, the floating gate electrodes comprising a metal-semiconductor compound; and a charge blocking layer interposed between each of the plurality of control gate electrodes and each of the plurality of floating gate electrodes. | 10-10-2013 |
20140054671 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode. | 02-27-2014 |
20140054672 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode. | 02-27-2014 |
20140054673 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each connected with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and metal silicide layers configured to be in contact with the pipe connection gate electrode. The electric resistance of the pipe connection gate electrode may be greatly reduced without deteriorating the characteristics of the memory layers by forming the metal silicide layers coming in contact with the pipe connection gate electrode. | 02-27-2014 |
20140054674 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a lower part buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate; and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers. In accordance with this technology, a lower part of the pipe connection gate electrode is buried in the substrate. Accordingly, electric resistance may be reduced because the pipe connection gate electrode may have an increased volume without a substantial increase of the height. | 02-27-2014 |
20140370702 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment. | 12-18-2014 |
20150072491 | 3-DIMENSIONAL NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another. | 03-12-2015 |
20150079748 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a lower part buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate; and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers. In accordance with this technology, a lower part of the pipe connection gate electrode is buried in the substrate. Accordingly, electric resistance may be reduced because the pipe connection gate electrode may have an increased volume without a substantial increase of the height. | 03-19-2015 |