Patent application number | Description | Published |
20110209527 | GAS SENSOR - A gas sensor having high detection sensitivity and a low output signal noise includes a laminate of thermistor ceramic, a catalytic electrode, an internal electrode, and external electrodes. When coming into contact with a detection target gas, the catalytic electrode generates heat, and the resistance of a thermistor layer of a sensing portion is decreased. Since the heat generated by the catalytic electrode is directly transferred to the thermistor layer without passing through an insulating layer or the like, high detection sensitivity is obtained. In addition, the structure can be formed in which heat of the sensing portion is insulated by a hollow portion and heat diffusion is prevented, so that the heat capacity of the sensing portion is further decreased. | 09-01-2011 |
20120188051 | Thermistor and Method for Manufacturing the Same - An NTC thermistor having a metal base material, a thermistor film layer formed on the metal base material, and a pair of split electrodes formed on the thermistor film layer. A ceramic slurry is applied onto a carrier film to form the thermistor film layer, a metal powder containing paste is applied onto the thermistor film layer to form the metal base material, and further an electrode paste is applied onto the metal base material to form the split electrodes. Thereafter, the three substances are integrally fired. | 07-26-2012 |
20130200989 | SEMICONDUCTOR CERAMIC ELEMENT AND METHOD FOR PRODUCING SAME - A semiconductor ceramic element includes an element main body where a PTC section including a semiconductor ceramic which has PTC characteristics and an NTC section including a semiconductor ceramic which has NTC characteristics are integrated by co-firing while suppressing interdiffusion. The element main body is formed in such a way that a PTC substrate is first obtained by firing a semiconductor ceramic material to serve as the PTC section at a predetermined temperature, and a paste containing a semiconductor ceramic material to serve as the NTC section is then applied or printed on the PTC substrate, followed by co-firing at a temperature lower than the predetermined temperature. | 08-08-2013 |
20130221584 | THERMISTOR AND METHOD FOR MANUFACTURING THE SAME - An NTC thermistor having a metal base material, a thermistor film layer formed on the metal base material, and a pair of split electrodes formed on the thermistor film layer. A ceramic slurry is applied onto a carrier film to form the thermistor film layer, a metal powder containing paste is applied onto the thermistor film layer to form the metal base material, and further an electrode paste is applied onto the metal base material to form the split electrodes. Thereafter, the three substances are integrally fired. | 08-29-2013 |
20130229256 | SEMICONDUCTOR CERAMIC COMPOSITION FOR NTC THERMISTORS - A semiconductor ceramic composition for use as a component of the body of NTC thermistors contains at least manganese and cobalt as main ingredients and both aluminum and titanium as additional ingredients for resistance adjustment by annealing. It becomes easier to adjust the resistance of the composition by annealing when the titanium content is equal to or lower than about 9.2 parts by weight on a TiO | 09-05-2013 |
20130298650 | MOISTURE-SENSITIVE CERAMIC MATERIAL AND A MOISTURE-SENSITIVE CERAMIC ELEMENT - A moisture-sensitive ceramic material having a composition represented by the general formula RE(A,B)O | 11-14-2013 |
20130328153 | ELECTRONIC-COMPONENT MOUNTING STRUCTURE - An electronic-component mounting structure includes an electronic component which includes a metal substrate, a semiconductor ceramic layer located on the metal substrate, a pair of split electrodes located on the semiconductor ceramic layer, and plating films located on the split electrodes and the metal substrate, and a mounting body on which lands to be connected to the respective split electrodes of the electronic component are provided. The position of a peripheral end portion of each land to be connected to the corresponding split electrode is located farther inside than the position of a peripheral end portion of the split electrode. In addition, a plane area of the land is smaller than that of the split electrode. | 12-12-2013 |
20130328154 | ELECTRONIC COMPONENT PACKAGE STRUCTURE - A thermistor includes a metal substrate, a semiconductor ceramic layer on the metal substrate, and a pair of split electrodes on the semiconductor layer. The semiconductor ceramic layer is formed by a solid-phase method. The metal substrate includes ceramic particles and is not interrupted in the direction of thickness by the ceramic particles or a pillar defined by a chain of the ceramic particles. Preferably, the metal substrate and the ceramic layer of the thermistor have a thickness of about 10 μm to about 80 μm and about 1 μm to about 10 μm, respectively. | 12-12-2013 |
20140232514 | THERMISTOR AND METHOD FOR MANUFACTURING THE SAME - A thermistor that includes a metal substrate layer, a thermistor thin film formed on the metal substrate layer, and electrode films formed on the thermistor thin film. The metal substrate layer and the electrode films contain a Ag—Pd alloy, and the content of Pd of the Ag—Pd alloy is 10 percent by weight or more. | 08-21-2014 |
20150070127 | NTC THERMISTOR ELEMENT AND METHOD AND METHOD FOR PRODUCING THE SAME - A NTC thermistor element that includes a substrate composed of a ceramic material containing Mn, Ni, Fe and Ti; and a pair of external electrodes on the substrate. When the molar amount of Mn in the substrate is a [mol %] and the molar amount of Ni in the substrate is b [mol %], a and b satisfy a+b=100, 44.90≦a≦65.27 and 34.73≦b≦55.10. When the molar amount of Fe is c [mol %] and the molar amount of Ti is d [mol %], c and d satisfy 24.22≦c≦39.57 and 5.04≦d≦10.18 based on a+b=100. | 03-12-2015 |