Tadashi Inaba
Tadashi Inaba, Haibara-Gun JP
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20080242090 | METAL-POLISHING LIQUID AND POLISHING METHOD - A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, | 10-02-2008 |
20090203215 | METAL POLISHING SLURRY AND CHEMICAL MECHANICAL POLISHING METHOD - A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided. The metal polishing slurry includes a compound represented by the following general formula (1): | 08-13-2009 |
20090221145 | METAL POLISHING SLURRY AND CHEMICAL MECHANICAL POLISHING METHOD - A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided. The metal polishing slurry includes, an oxidizing agent; and an organic acid; and a compound represented by the following general formula (1): | 09-03-2009 |
20100330809 | POLISHING LIQUID FOR METALS - A liquid for polishing metals, which is used in the chemical and/or mechanical flattening of a semiconductor device, the polishing liquid being characterized in that it comprises at least one member selected from the group consisting of tetrazoles or triazoles represented by any one of the following general formulas (I) to (III): | 12-30-2010 |
20110281436 | CLEANING COMPOSITION, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND CLEANING METHOD - Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9. | 11-17-2011 |
20140001145 | METHOD OF FORMING A CAPACITOR STRUCTURE, AND A SILICON ETCHING LIQUID USED IN THIS METHOD | 01-02-2014 |
20140308819 | METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND ETCHING METHOD TO BE USED THEREIN - A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film. | 10-16-2014 |
20140332713 | ETCHING METHOD AND ETCHING LIQUID USED THEREIN - An etching method having the step of: applying an etching liquid to a substrate, the etching liquid containing: a fluorine ion, a nitrogen-containing compound having at least 2 of nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate. | 11-13-2014 |
20150087156 | ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME, AS WELL AS KIT FOR PREPARATION OF ETCHING LIQUID - A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate. | 03-26-2015 |
Tadashi Inaba, Kanagawa JP
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20080242860 | SILVER HALIDE COLOR PHOTOGRAPHIC LIGHT-SENSITIVE MATERIAL AND IMAGE FORMATION METHOD USING THE SAME, SILVER HALIDE EMULSION, REDUCING COMPOUND HAVING GROUP ADSORPTIVE TO SILVER HALIDE AND METHOD FOR PRODUCING THE SAME - The present invention relates to a silver halide color photographic light-sensitive material wherein at least one of light-sensitive silver halide emulsion layers includes a silver halide emulsion having a silver chloride content of at least 95 mol % and a silver iodide content of 0.05 mol % to 0.75 mol % and/or a silver bromide content of 0.05 mol % to 4.00 mol % and further at least one compound represented by the following formula (I): | 10-02-2008 |
20100075500 | Metal polishing slurry and chemical mechanical polishing method - The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X | 03-25-2010 |
20100160200 | Cleaning liquid for semiconductor device and cleaning method - The invention provides a cleaning liquid for semiconductor devices which is capable of removing deposits on a surface of an object to be cleaned including a photoresist, an antireflective film, an etching residue and an ashing residue at a low temperature in a short period of time with reduced environmental burdens and without causing corrosion of an interlayer dielectric film, a metal, a metal nitride, and an alloy in the object to be cleaned. The cleaning liquid for semiconductor devices according to the invention contains a reducing agent and a surfactant and has a pH of 10 to 14. | 06-24-2010 |
Tadashi Inaba, Hokkaido JP
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20100107921 | TRACK CAR DRIVE SYSTEM, AND TRACK CAR USING THE SYSTEM - Provided is a track car drive system, which is assisted by a generator motor so that it may attain a gear array for equalizing the number of speed range and the gear ratios at the individual gears as a transmission for the forward speed and the backward speed and which can be combined with the generator motor. A transmission ( | 05-06-2010 |
Tadashi Inaba, Shizuoka-Ken JP
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20090239380 | POLISHING LIQUID FOR METAL AND POLISHING METHOD USING THE SAME - A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid. | 09-24-2009 |
20090246956 | METAL POLISHING COMPOSITION AND CHEMICAL MECHANICAL POLISHING METHOD - The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R | 10-01-2009 |
Tadashi Inaba, Shizuoka JP
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20090082240 | STRIPPING LIQUID FOR SEMICONDUCTOR DEVICE, AND STRIPPING METHOD - A stripping liquid for a semiconductor device is provided that includes an aqueous solution containing a quaternary ammonium hydroxide, an oxidizing agent, an alkanolamine, and an alkali metal hydroxide. There is also provided a stripping method that includes a stripping liquid preparation step of preparing the stripping liquid and a stripping step of removing at least one deposit selected from the group consisting of a photoresist, an anti-reflection film, and an etching residue by means of the stripping liquid obtained in the stripping liquid preparation step. | 03-26-2009 |
20140120734 | Novel Etching Composition - This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water. | 05-01-2014 |
Tadashi Inaba, Seto-Shi JP
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20090050493 | Gas Sensor, Fuel Supply System Using the Same, and Method of Using Gas Sensor - A gas sensor has a gas diffusion barrier that supports therein a catalyst that catalyzes a reaction between combustible components and oxygen; a solid electrolyte having oxide ion conductivity; and electrodes formed on opposite surfaces of the solid electrolyte. The electrode is formed in a region into which ambient gas diffuses at a rate limited by the gas diffusion barrier. The electrode also catalyzes the reaction between combustible gas and oxygen. The electrode is formed in a region into which atmosphere is introduced. | 02-26-2009 |
Tadashi Inaba, Yoshida-Cho JP
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20120231632 | Novel Etching Composition - This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition. | 09-13-2012 |
Tadashi Inaba, Matsumoto-Shi JP
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20130195535 | MEDIUM FEEDER AND PRINTER INCLUDING THE SAME - A medium feeder includes a first rotation body; a second rotation body which engages with the first rotation body while overlapping with the first rotation body, and disengages from the first rotation body in response to the presence of the feed target medium nipped between the first and second rotation bodies; a rotation body support member which supports the second rotation body, and is configured to be movable between an advancing position where the second rotation body engages with the first rotation body and a retreating position where the second rotation body disengages from the first rotation body; and a detection unit which detects migration of the rotation body support member to the retreating position. | 08-01-2013 |