Patent application number | Description | Published |
20090053503 | Precursor composition for porous film and method for preparing the composition, porous film and method for preparing the porous film, and semiconductor device - A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR | 02-26-2009 |
20090186210 | PRECURSOR COMPOSITION FOR POROUS THIN FILM, METHOD FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS THIN FILM, METHOD FOR PREPARATION OF THE POROUS THIN FILM, AND SEMICONDUCTOR DEVICE - Disclosed is a precursor composition comprising: a compound selected from a compound represented by the formula: Si(OR | 07-23-2009 |
20100220274 | POROUS SILICA PRECURSOR COMPOSITION AND METHOD FOR PREPARING THE PRECURSOR COMPOSITION, POROUS SILICA FILM AND METHOD FOR PREPARING THE POROUS SILICA FILM, SEMICONDUCTOR ELEMENT, APPARATUS FOR DISPLAYING AN IMAGE, AS WELL AS LIQUID CRYSTAL DISPLAY - A porous silica precursor composition is herein provided and the precursor composition comprises an organic silane represented by the following chemical formula 1: | 09-02-2010 |
20100221433 | PROCESS FOR MANUFACTURING HYDROPHOBIZED MICROPOROUS FILM - A process for manufacturing a hydrophobized microporous film includes: forming an organic silica insulating film | 09-02-2010 |
20110092071 | METHOD OF PRODUCING SILYLATED POROUS INSULATING FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SILYLATED MATERIAL - Provided is a method for the effective silylation treatment of a silica-based porous insulating film having a plurality of pores. The method of producing a silylated porous insulating film ( | 04-21-2011 |
20110204519 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers. | 08-25-2011 |
20120003841 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a step of forming a porous dielectric film on a substrate; a step of disposing the substrate having the porous dielectric film formed thereon inside a chamber; a step of introducing siloxane into the chamber in which the substrate is disposed and heating the substrate to a first temperature; and a step heating the substrate to which the introduced siloxane adheres to a second temperature higher than the first temperature. A pressure inside the chamber is maintained to be equal to or lower than 1 kPa. In the present embodiment, the first temperature is equal to or higher than a temperature at which the pressure inside the chamber is a saturated vapor pressure of the siloxane, and is equal to or lower than a temperature at which a polymerization between the porous dielectric film and the siloxane starts. | 01-05-2012 |
20120025395 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a first porous layer that is formed over a substrate and includes a SiO | 02-02-2012 |