Patent application number | Description | Published |
20090237818 | VIBRATING ELEMENT MANUFACTURING METHOD, VIBRATING ELEMENT, VIBRATING ACTUATOR, LENS BARREL AND CAMERA SYSTEM - A vibrating element manufacturing method by which adhesion is stabilized and yield is improved, a vibrating element, a vibrating actuator, a lens barrel and a camera system. A vibrating element manufacturing method is provided with a first step of arranging an elastic body on a holding member, a second step of forming an electromechanical transducing element by injection molding on the surface of the elastic body, and a third step of sintering the electromechanical transducing element by heating and bonding the elastic body with the electromechanical transducer element. | 09-24-2009 |
20100052504 | LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - A light emitting device, includes: a light source; a first wavelength conversion unit absorbing a light-source light radiated by the light source and radiating a first light, a wavelength of the first light being different from a wavelength of the light-source light; and a second wavelength conversion unit dispersedly provided in the first wavelength conversion unit, the second wavelength conversion unit absorbing the light-source light and radiating a second light. An absorptance of the light-source light in the second wavelength conversion unit is higher than an absorptance of the light-source light in the first wavelength conversion unit. A wavelength of the second light is different from the wavelength of the light-source light and different from the wavelength of the first light. | 03-04-2010 |
20100053970 | LIGHT-EMITTING DEVICE AND ILLUMINATING DEVICE - A light-emitting device includes: a first laser light source; a first diffusion member provided along a light axis of a first light radiated form the first laser light source; and a first wavelength converter provided along the first diffusion member. The first diffusion member generates a second light from the first light. The second light outgoes in a direction different from the light axis direction of the first light. A ratio of generating the second light from the first light in a first part is higher than that in a second part, wherein an intensity of the first light in the first part is lower than that in a second part. The first wavelength converter absorbs the second light and emitting a third light having a different wavelength from the second light. | 03-04-2010 |
20100120319 | ELECTRON-EMITTING DEVICE, ELECTRON SOURCE AND DISPLAY APPARATUS USING THE SAME DEVICE, AND MANUFACTURING METHODS OF THEM - An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion. | 05-13-2010 |
20110019707 | LIGHT EMITTING DEVICE AND A METHOD FOR MANUFACTURING THE SAME - A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light having a wavelength different from a wavelength of the source light; a light transmitting portion provided at an opposite side of the first wavelength conversion portion from the light source and configured to transmit the source light and the first light; and a second wavelength conversion portion provided at an opposite side of the light transmitting portion from the first wavelength conversion portion and configured to absorb at least one of the source light and the first light to emit second light having a wavelength different from the wavelength of the source light and also different from a wavelength of the first light. Part of the source light is configured to be taken to an outside of the light emitting device without passing through at least one of the first wavelength conversion portion and the second wavelength conversion portion. | 01-27-2011 |
20110147775 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights. | 06-23-2011 |
20110147776 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light. | 06-23-2011 |
20120032139 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode. | 02-09-2012 |
20120032196 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a base substrate, first and second substrates, first and second semiconductor light emitting elements. The first and second substrates are provided on a major surface of the base substrate and include first and second reflection regions, respectively. The first and second semiconductor light emitting elements include first and second structural bodies including first and second light emitting layers, respectively. Each of the first and second semiconductor light emitting elements is inputted with a power not less than 1 Watt. An area of a face of the first semiconductor light emitting element is S | 02-09-2012 |
20120286237 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including In | 11-15-2012 |
20130001584 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode. | 01-03-2013 |
20130069098 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights. | 03-21-2013 |
20130146924 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light. | 06-13-2013 |