Patent application number | Description | Published |
20090305503 | Manufacturing Method of Semiconductor Device - A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 μm and equal to or less than 10 μm is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 μm and equal to or less than 10 μm to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed. | 12-10-2009 |
20120235558 | Insulating Pattern, Method of Forming the Insulating Pattern, Light-Emitting Device, Method of Manufacturing the Light-Emitting Device, and Lighting Device - A simple formation method of an insulating pattern having an eaves portion using one light-exposure mask is provided. As the formation method of an insulating pattern having an eaves portion, first, a first photosensitive organic layer is formed over a substrate, and then a first region is exposed to light with the use of a light-exposure mask, so that a leg portion is formed. After that, a second photosensitive organic layer is formed, the light-exposure mask is moved in the direction parallel to the substrate, and then a second region partly overlapping with the first region is exposed to light plural times, so that a stage portion is formed. The insulating pattern formed by this method may be applied to the light-emitting device or the lighting device. | 09-20-2012 |
20130302938 | METHOD FOR FORMING WIRING, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided. Further, a semiconductor device including the transistor and the wiring is provided. A resist mask is formed over a second conductive film stacked over a first conductive film; part of the second conductive film and part of the first conductive film are removed with use of the resist mask as a mask so that the first conductive film has a taper angle greater than or equal to 15° and less than or equal to 45°; and the resist mask is removed. The first conductive film contains copper. | 11-14-2013 |
20140021466 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film. | 01-23-2014 |
20140099741 | Insulating Pattern, Method of Forming the Insulating Pattern, Light-Emitting Device, Method of Manufacturing the Light-Emitting Device, and Lighting Device - A simple formation method of an insulating pattern having an eaves portion using one light-exposure mask is provided. As the formation method of an insulating pattern having an eaves portion, first, a first photosensitive organic layer is formed over a substrate, and then a first region is exposed to light with the use of a light-exposure mask, so that a leg portion is formed. After that, a second photosensitive organic layer is formed, the light-exposure mask is moved in the direction parallel to the substrate, and then a second region partly overlapping with the first region is exposed to light plural times, so that a stage portion is formed. The insulating pattern formed by this method may be applied to the light-emitting device or the lighting device. | 04-10-2014 |
20140138674 | SEMICONDUCTOR DEVICE - A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured. | 05-22-2014 |
20150014680 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes. | 01-15-2015 |
20150108473 | Semiconductor Device, Method for Manufacturing the Same, and Etchant Used for the Same - A method for manufacturing a semiconductor device includes the steps of forming a first conductive film over a substrate; forming an insulating film over the first conductive film; forming an oxide semiconductor film over the insulating film to overlap with the first conductive film; forming a second conductive film including a metal film containing molybdenum as its main component and a metal film containing copper as its main component over the oxide semiconductor film; and etching the second conductive film by an etchant. At the time of etching the second conductive film by the etchant, the oxide semiconductor film is used as an etching stopper film. In addition, the etchant which can be used for a transistor including the oxide semiconductor film is provided. | 04-23-2015 |
20150111340 | METHOD FOR FORMING WIRING, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided. Further, a semiconductor device including the transistor and the wiring is provided. A resist mask is formed over a second conductive film stacked over a first conductive film; part of the second conductive film and part of the first conductive film are removed with use of the resist mask as a mask so that the first conductive film has a taper angle greater than or equal to 15° and less than or equal to 45′; and the resist mask is removed. The first conductive film contains copper. | 04-23-2015 |