Patent application number | Description | Published |
20090315432 | METAL OXIDE, PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT - Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(Si | 12-24-2009 |
20100025617 | METAL OXIDE - Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). | 02-04-2010 |
20100025618 | PIEZOELECTRIC MATERIAL - Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by A | 02-04-2010 |
20100155647 | OXYNITRIDE PIEZOELECTRIC MATERIAL AND METHOD OF PRODUCING THE SAME - Provided are an oxynitride piezoelectric material which exhibits ferroelectricity and has good piezoelectric properties and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): | 06-24-2010 |
20100231095 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE, AND METHOD OF PRODUCING THE PIEZOELECTRIC DEVICE - Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): | 09-16-2010 |
20100231096 | PIEZOELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, AND PIEZOELECTRIC DEVICE - Provided is a piezoelectric material having a good piezoelectric property and Curie temperature (Tc) of 150° C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1): xBi(Mg | 09-16-2010 |
20110012050 | PIEZOELECTRIC MATERIAL - Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): | 01-20-2011 |
20110268965 | PIEZOELECTRIC MATERIAL - Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1): | 11-03-2011 |
20130020525 | PIEZOELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, AND PIEZOELECTRIC DEVICE - Provided is a piezoelectric material having good piezoelectric properties and a Curie temperature (Tc) of 150° C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1): xBi(Mg | 01-24-2013 |
20130125359 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE, AND METHOD OF PRODUCING THE PIEZOELECTRIC DEVICE - Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): | 05-23-2013 |
20130330541 | METAL OXIDE - Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). | 12-12-2013 |